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Infineon Technologies IPZ60R070P6FKSA1

Part No.:
IPZ60R070P6FKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-4
Datasheet:
AetrixIPZ60R070P6FKSA1.pdf
Description:
MOSFET N-CH 600V 53.5A TO247-4
Quantity:
Payment:
Payment
Shipping:
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Inventory:9,914

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Product details

Overview

IPZ60R070P6FKSA1 from Infineon Technologies is a 600 V, 70 mΩ superjunction MOSFET in the CoolMOS™ P6 family, designed for high-efficiency hard-switching and resonant SMPS topologies. It delivers 53.5 A continuous drain current at TC = 25°C, 100 nC total gate charge, and 12.3 µJ output energy at 400 V, enabling compact, high-power-density PFC and server PSU designs.

For engineers reviewing the IPZ60R070P6FKSA1 datasheet, IPZ60R070P6FKSA1 pinout, IPZ60R070P6FKSA1 application, or IPZ60R070P6FKSA1 equivalent, key selection criteria include RDS(on)/Qg figure-of-merit, dv/dt ruggedness (100 V/ns), Kelvin source configuration, and industrial-grade JEDEC qualification per J-STD-020/JESD22.

Technical Context

This device implements Infineon's superjunction architecture with a 4-pin TO-247 package featuring separate driver source (Pin 3) and power source (Pin 2) terminals to minimize gate loop inductance and suppress parasitic oscillation during fast switching. Its 6.1 V gate plateau voltage and low Ciss (4750 pF) support stable 13 V gate drive with minimal overshoot.

The MOSFET exhibits high commutation ruggedness (250 A/µs di/dt capability) and avalanche robustness (1136 mJ single-pulse EAS), making it suitable for unclamped inductive switching in LLC and phase-shifted full-bridge converters without external snubbers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - Rated blocking voltage for 400 V DC-link PFC and telecom rectifier stages
RDS(on),max70 mΩ at Tj = 25°C - Enables <53.5 A continuous conduction with ≤0.2 W conduction loss at 20 A
Qg,typ100 nC - Determines gate drive power requirement (~1.3 W at 100 kHz, 13 V swing)
Eoss@400V12.3 µJ - Directly impacts turn-on switching loss in hard-switched PWM applications
dv/dt ruggedness100 V/ns - Supports reliable operation in high-dV/dt environments without false turn-on
Body diode dI/dt250 A/µs - Allows fast, controlled reverse recovery in synchronous rectification and ZVS transitions
Tj,max150 °C - Enables operation in thermally constrained server and UPS enclosures with derated current

Pinout & Package

IPZ60R070P6FKSA1 uses the PG-TO247-4 package: a 4-pin through-hole variant with isolated source Kelvin connection. The package features copper leads, Pb-free plating, and halogen-free molding compound, qualified for industrial temperature range (−55 °C to +150 °C).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1DrainMain high-side power path terminal; connected to DC-link or transformer primary
Pin 2Power SourceHigh-current return path for load current; routed to bulk capacitor ground
Pin 3Driver SourceKelvin reference for gate driver IC; eliminates source inductance impact on switching edge control
Pin 4GateControl input; requires 10–13 V drive with <1 Ω gate resistance for optimal switching speed

Key Features

FeatureDesign Value
4-pin Kelvin sourceEliminates source inductance-induced gate voltage undershoot, enabling clean 100 V/ns switching without external gate clamping
RDS(on) × Qg FOM7.0 Ω·nC - Best-in-class trade-off between conduction and switching loss for 600 V SJ MOSFETs
Industrial qualificationJEDEC J-STD-020 (reflow) and JESD22 (reliability) certified - supports 10+ year field life in telecom and server PSUs
Enhanced dv/dt ruggedness100 V/ns rating - allows direct use in high-frequency half-bridge configurations without RC snubbers on gate or drain

Applications

Server Power SupplyTelecom Rectifier

Use Scenario: 3 kW front-end PFC stage operating at 100 kHz with interleaved boost topology.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter.

Use Value: 70 mΩ RDS(on) and 12.3 µJ Eoss reduce total losses by 1.8 W vs. prior-gen CoolMOS™ P5, improving efficiency from 96.2% to 96.5% at full load.

Use Scenario: 48 V/50 A telecom rectifier module with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in high-side active clamp circuit with 200 ns dead-time.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during clamp voltage reversal, eliminating need for gate resistors >4.7 Ω.

UPS Inverter StageIndustrial Motor Drive

Use Scenario: 5 kVA online UPS inverter using three-phase IGBT/MOSFET hybrid bridge.

IC Role / Device Role / Timing Role: Low-side switch in 16 kHz SPWM leg with bidirectional current flow.

Use Value: 250 A/µs body diode dI/dt enables zero-voltage switching during freewheeling, reducing diode recovery loss by 35%.

Use Scenario: 7.5 kW HVAC inverter with space-vector modulation at 8 kHz switching frequency.

IC Role / Device Role / Timing Role: Upper-leg switch in 3-phase inverter bridge driving permanent magnet motor.

Use Value: 1136 mJ single-pulse avalanche energy rating allows safe operation during motor stall events without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW60R099P6RDS(on) = 99 mΩ, Qg = 72 nC - higher conduction loss, lower switching lossBetter suited for <50 kHz applications where thermal margin exceeds 10 KSelect when gate drive capability is limited and conduction loss is secondary to EMI control
STW62N60M2RDS(on) = 62 mΩ, no Kelvin source, Ciss = 5200 pF - lower RDS(on) but higher gate drive demandRequires tighter layout and gate resistor tuning to avoid oscillation in >75 kHz designsSelect only with validated PCB layout and gate driver matching; not drop-in compatible due to 3-pin TO-247

Compared with IPW60R099P6 and STW62N60M2, IPZ60R070P6FKSA1 uniquely balances low RDS(on), low Qg, and Kelvin source integrity-making it optimal for high-frequency, high-reliability server and telecom power where layout constraints and thermal headroom are tightly coupled.

Availability

IPZ60R070P6FKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IPZ60R070P6FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ P6 product line targets high-efficiency AC-DC conversion in datacenter, telecom, and industrial power systems, emphasizing reduced system size, weight, and thermal footprint without compromising ruggedness.

FAQ

What is the purpose of the separate driver source (Pin 3) in IPZ60R070P6FKSA1?

The driver source (Pin 3) provides a dedicated Kelvin connection to the gate driver IC's return path, decoupling gate loop inductance from the high-current power source (Pin 2). This eliminates source inductance-induced gate voltage undershoot during turn-off, enabling precise control of switching edges and preventing false turn-on at 100 V/ns dv/dt stress.

Can IPZ60R070P6FKSA1 replace older CoolMOS™ P5 devices without layout changes?

No. While electrically compatible in voltage and current ratings, IPZ60R070P6FKSA1 requires PCB layout revision to accommodate its 4-pin TO-247-4 footprint and separate driver source routing. The Pin 3 trace must be short, low-inductance, and isolated from power ground planes to preserve Kelvin functionality and avoid noise coupling into the gate drive path.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

For 100 kHz hard-switching with 13 V gate drive, a gate resistor of 1.7 Ω is specified in the datasheet for optimal Eon/Eoff balance. Increasing beyond 3.3 Ω significantly raises turn-off loss and reduces dv/dt immunity; values below 1.0 Ω risk excessive peak gate current (>5 A) and ringing without proper layout damping.

Is IPZ60R070P6FKSA1 suitable for paralleling in high-current PFC designs?

Yes, but with mandatory gate ferrite beads or individual totem-pole drivers per device. The datasheet explicitly recommends ferrite beads on each gate line to suppress common-mode oscillation during parallel operation. Without this, unequal current sharing and localized thermal runaway can occur above 80 A total RMS current due to parametric mismatch and layout asymmetry.

IPZ60R070P6FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P6
Package/Case:
TO-247-4
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
53.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
70mOhm @ 20.6A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4750 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
391W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-4

IPZ60R070P6FKSA1 FAQ

1.How can I place an order for IPZ60R070P6FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPZ60R070P6FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPZ60R070P6FKSA1 reliable?

The price and inventory of IPZ60R070P6FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPZ60R070P6FKSA1 is usually 5 days.

3.What payment methods are accepted for IPZ60R070P6FKSA1?

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4.How is shipping managed for IPZ60R070P6FKSA1?

IPZ60R070P6FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPZ60R070P6FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPZ60R070P6FKSA1?

For technical support, including IPZ60R070P6FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPZ60R070P6FKSA1 requirements.

6.How does Aetrix verify that IPZ60R070P6FKSA1 is sourced from the original manufacturer or authorized distributors?

All IPZ60R070P6FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPZ60R070P6FKSA1 meets industry standards.

7.What is the process for return or replacement of IPZ60R070P6FKSA1?

All IPZ60R070P6FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPZ60R070P6FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPZ60R070P6FKSA1 part is unused and in its original packaging.

Return procedure for IPZ60R070P6FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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