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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFSL3806PBF MOSFET N-CH 60V 43A TO262 Infineon Technologies	7,745	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	43A (Tc)	10V	15.8mOhm @ 25A, 10V	4V @ 50µA	30 nC @ 10 V	±20V	1150 pF @ 50 V	-	71W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFSL4227PBF MOSFET N-CH 200V 62A TO262 Infineon Technologies	9,142	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	62A (Tc)	10V	26mOhm @ 46A, 10V	5V @ 250µA	98 nC @ 10 V	±30V	4600 pF @ 25 V	-	330W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFSL4310ZPBF MOSFET N-CH 100V 120A TO262 Infineon Technologies	4,474	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	6mOhm @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	6860 pF @ 50 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFU1018EPBF MOSFET N-CH 60V 56A IPAK Infineon Technologies	8,948	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	56A (Tc)	10V	8.4mOhm @ 47A, 10V	4V @ 100µA	69 nC @ 10 V	±20V	2290 pF @ 50 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
IRFU2307ZPBF MOSFET N-CH 75V 42A IPAK Infineon Technologies	5,317	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	42A (Tc)	10V	16mOhm @ 32A, 10V	4V @ 100µA	75 nC @ 10 V	±20V	2190 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
IRFU2607ZPBF MOSFET N-CH 75V 42A IPAK Infineon Technologies	5,740	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	42A (Tc)	10V	22mOhm @ 30A, 10V	4V @ 50µA	51 nC @ 10 V	±20V	1440 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
IRFU3806PBF MOSFET N-CH 60V 43A IPAK Infineon Technologies	2,752	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	43A (Tc)	10V	15.8mOhm @ 25A, 10V	4V @ 50µA	30 nC @ 10 V	±20V	1150 pF @ 50 V	-	71W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
IRLU3114ZPBF MOSFET N-CH 40V 42A I-PAK Infineon Technologies	2,538	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	42A (Tc)	4.5V, 10V	4.9mOhm @ 42A, 10V	2.5V @ 100µA	56 nC @ 4.5 V	±16V	3810 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK
IRLU8721-701PBF MOSFET N-CH 30V 65A I-PAK Infineon Technologies	2,435	RFQ	Datasheet	HEXFET®	TO-252-4, DPAK (3 Leads + Tab)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	65A (Tc)	4.5V, 10V	8.4mOhm @ 25A, 10V	2.35V @ 25µA	13 nC @ 4.5 V	±20V	1030 pF @ 15 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	I-PAK (LF701)
64-2096PBF MOSFET N-CH 75V 160A D2PAK Infineon Technologies	8,053	RFQ	Datasheet	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	160A (Tc)	10V	3.8mOhm @ 110A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	7580 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK (7-Lead)

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