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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU3114ZPBF

Name: IRLU3114ZPBF
Brand: Infineon Technologies
SKU: IRLU3114ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU3114ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU3114ZPBF.pdf

Description:: MOSFET N-CH 40V 42A I-PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLU3114ZPBF from Infineon Technologies is a logic-level N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 40 V V_DSS, 4.9 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and 130 A continuous drain current at T_C = 25°C. It delivers fast switching (t_d(on) = 25 ns, t_f = 50 ns), high repetitive avalanche capability (E_AS = 500 mJ), and integrated body diode with t_rr = 45 ns - used in DC-DC synchronous buck converters and motor drive half-bridges.

For engineers reviewing the IRLU3114ZPBF datasheet, IRLU3114ZPBF pinout, IRLU3114ZPBF application, or IRLU3114ZPBF equivalent, key selection criteria include on-resistance at 4.5 V gate drive, thermal resistance R_θJC = 1.05 °C/W, unclamped inductive switching robustness, and SOA compliance up to 100 µs pulses at 175°C junction temperature.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize specific on-resistance while maintaining ruggedness against repetitive avalanche events. Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) enables direct drive from 3.3 V and 5 V logic controllers without level-shifting circuitry.

The device integrates a low-Q_rr (41 nC), fast-recovery body diode (t_rr = 45 ns) and exhibits low output capacitance (C_oss = 650 pF at V_DS = 20 V), supporting high-frequency operation in hard-switched topologies up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in off-state; supports 24 V nominal bus systems with 66% derating margin.
R_DS(on) @ V_GS = 10 V	4.9 mΩ max - Enables <1.5 W conduction loss at 55 A DC, critical for high-current power stages.
I_D @ T_C = 25°C	130 A - Silicon-limited continuous current; defines thermal design baseline for heatsink sizing.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance; allows precise junction temperature estimation under forced-air cooling.
E_AS	500 mJ - Single-pulse avalanche energy rating; validates safe operation during inductive turn-off transients.
t_r/t_f	140 ns / 50 ns - Rise/fall times at V_DD = 20 V, I_D = 42 A, R_G = 3.7 Ω; determines switching loss and EMI profile.
Q_g	56 nC max - Total gate charge; sets minimum driver peak current requirement (~1.5 A for 37 ns rise).

Pinout & Package

IRLU3114ZPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for enhanced thermal performance. The package features three terminals: Source (S), Drain (D), and Gate (G), arranged in standard D-Pak footprint per JEDEC TO-252-2.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal, connected to internal die substrate	Exposed copper pad on bottom of package; must be soldered to large PCB copper area for thermal conduction and low-inductance return path.
Source (S)	Reference node for gate drive and current return	Two pins (S1, S2) in parallel; reduces source inductance (L_S = 7.5 nH) to improve switching stability and dV/dt immunity.
Gate (G)	Control electrode for channel formation	High-impedance input requiring low-capacitance routing; Q_gd = 18 nC dominates Miller effect during switching transitions.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V (R_DS(on) ≤ 6.5 mΩ), enabling direct interface with microcontrollers and PWM ICs.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_J(max) = 175°C, verified per AN-1005 test methodology.
Low gate charge	Q_g = 56 nC and Q_gd/Q_g ≈ 32% reduce driver power loss and improve efficiency in high-frequency SMPS.
Enhanced body diode	V_SD = 1.3 V and Q_rr = 41 nC support efficient synchronous rectification and reduce reverse recovery losses.
Thermal robustness	175°C maximum junction temperature and R_θJC = 1.05 °C/W allow sustained operation in compact, sealed enclosures without active cooling.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-side/low-side switching in 24 V BLDC motor control with 50 A peak phase current.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles continuous 42 A load current with <1.8 W conduction loss at 100% duty cycle.

Use Value: Fast t_f = 50 ns and low C_oss minimize shoot-through risk and switching loss during PWM commutation at 20 kHz.

Use Scenario: 12 V → 1.2 V, 60 A point-of-load converter in server VRM applications.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET); conducts 60 A average current with V_GS = 5 V gate drive from controller.

Use Value: R_DS(on) = 4.9 mΩ at V_GS = 10 V and Q_rr = 41 nC reduce total power loss by 22% versus standard Schottky solution.

Industrial Power Supply Output Stage

Automotive Body Control Module Load Switch

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main output switch; sustains 130 A pulsed current during transient load steps with minimal voltage droop.

Use Value: 175°C T_J(max) and E_AS = 500 mJ ensure reliability during output short-circuit events without external protection.

Use Scenario: 12 V battery-fed solenoid driver in automotive BCM with 30 A inrush current.

IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing via R_DS(on) monitoring.

Use Value: Logic-level V_GS(th) = 1.0–2.5 V enables direct MCU GPIO control; R_θJC = 1.05 °C/W supports 100% duty-cycle operation at ambient 85°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3114ZPbF	Same die, I-Pak (TO-251) package; R_θJA = 110 °C/W vs. 40 °C/W for D-Pak; no exposed drain pad.	Lower power density; unsuitable for >40 A continuous operation without forced air.	Select when through-hole mounting or legacy board layout requires TO-251 footprint.
STP40NF10L	100 V V_DSS, 12 mΩ R_DS(on), higher gate charge (Q_g = 85 nC), no specified repetitive avalanche rating.	Wider voltage margin but lower efficiency and reduced ruggedness in 24 V systems.	Select only if system requires >40 V blocking capability and can accept 2.5× higher conduction loss.

Compared with IRLR3114ZPbF and STP40NF10L, IRLU3114ZPBF offers optimal balance of low R_DS(on), fast switching, and validated avalanche robustness in surface-mount form - making it preferred for space-constrained, high-efficiency 24–48 V industrial and automotive power stages.

Availability

IRLU3114ZPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and automotive load switches requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for IRLU3114ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial motor control, renewable energy inverters, and automotive electrification systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLU3114ZPBF supports 89 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited current derating due to thermal constraints, not package limitation, and assumes adequate PCB copper area for heat dissipation.

Does this MOSFET support gate drive from a 3.3 V microcontroller?

Yes - its logic-level gate threshold (V_GS(th) = 1.0–2.5 V) and guaranteed R_DS(on) ≤ 6.5 mΩ at V_GS = 4.5 V enable reliable enhancement with 3.3 V GPIO outputs. However, full 4.9 mΩ performance requires ≥10 V drive; for 3.3 V operation, expect ~12 mΩ and verify thermal margin at target load current.

What is the recommended gate resistor for 200 kHz switching in a buck converter?

A 3.7 Ω gate resistor is used in the datasheet's switching time test circuit (Fig 18a). For 200 kHz operation, a 2.2–4.7 Ω non-inductive resistor balances switching speed (t_f ≈ 50 ns) and gate driver stress. Lower values increase peak gate current (>1.5 A) but reduce EMI; higher values slow switching and raise losses.

Is the body diode suitable for synchronous rectification without external Schottky?

Yes - the integrated body diode has V_SD = 1.3 V and Q_rr = 41 nC at T_J = 25°C, enabling efficient synchronous rectification in buck and LLC topologies up to 200 kHz. Its soft recovery characteristic (t_rr = 45 ns) minimizes voltage overshoot and EMI compared to standard diodes.

IRLU3114ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

IRLU3114ZPBF FAQ

1.How can I place an order for IRLU3114ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU3114ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU3114ZPBF reliable?

The price and inventory of IRLU3114ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU3114ZPBF is usually 5 days.

3.What payment methods are accepted for IRLU3114ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU3114ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU3114ZPBF?

IRLU3114ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU3114ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU3114ZPBF?

For technical support, including IRLU3114ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU3114ZPBF requirements.

6.How does Aetrix verify that IRLU3114ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLU3114ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU3114ZPBF meets industry standards.

7.What is the process for return or replacement of IRLU3114ZPBF?

All IRLU3114ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU3114ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU3114ZPBF part is unused and in its original packaging.

Return procedure for IRLU3114ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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