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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
64-6006PBF MOSFET N-CH 300V 46A TO247AC Infineon Technologies	6,330	RFQ	Datasheet	HEXFET®	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	300 V	46A (Tc)	10V	59mOhm @ 33A, 10V	5V @ 250µA	247 nC @ 10 V	±30V	7370 pF @ 25 V	-	430W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
IRFS3207PBF MOSFET N-CH 75V 170A D2PAK Infineon Technologies	6,657	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	75 V	170A (Tc)	10V	4.5mOhm @ 75A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	7600 pF @ 50 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFS4310ZPBF MOSFET N-CH 100V 120A D2PAK Infineon Technologies	4,297	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	6mOhm @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	6860 pF @ 50 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF5210LPBF MOSFET P-CH 100V 38A TO262 Infineon Technologies	7,512	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	38A (Tc)	10V	60mOhm @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	2780 pF @ 25 V	-	3.1W (Ta), 170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262
IRF6215LPBF MOSFET P-CH 150V 13A TO262 Infineon Technologies	6,672	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	150 V	13A (Tc)	10V	290mOhm @ 6.6A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	860 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
AUXAKF1405ZS-7P MOSFET N-CH 55V 120A D2PAK Infineon Technologies	8,822	RFQ	Datasheet	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	120A (Tc)	10V	4.9mOhm @ 88A, 10V	4V @ 150µA	230 nC @ 10 V	±20V	5360 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK (7-Lead)
IRFSL38N20DPBF MOSFET N-CH 200V 43A TO262 Infineon Technologies	6,095	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	43A (Tc)	-	54mOhm @ 26A, 10V	5V @ 250µA	91 nC @ 10 V	-	2900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-262
IRFR3806PBF MOSFET N-CH 60V 43A DPAK Infineon Technologies	2,010	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	60 V	43A (Tc)	10V	15.8mOhm @ 25A, 10V	4V @ 50µA	30 nC @ 10 V	±20V	1150 pF @ 50 V	-	71W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRFSL4310PBF MOSFET N-CH 100V 130A TO262 Infineon Technologies	5,765	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	130A (Tc)	10V	7mOhm @ 75A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	7670 pF @ 50 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFR1018EPBF MOSFET N-CH 60V 56A DPAK Infineon Technologies	4,795	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	60 V	56A (Tc)	10V	8.4mOhm @ 47A, 10V	4V @ 100µA	69 nC @ 10 V	±20V	2290 pF @ 50 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)

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