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Infineon Technologies AUXAKF1405ZS-7P
- Part No.:
- AUXAKF1405ZS-7P
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Datasheet:
-
AUXAKF1405ZS-7P.pdf
- Description:
- MOSFET N-CH 55V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,822
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Product details
Overview
AUXAKF1405ZS-7P from Vishay Siliconix (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK-7L (TO-263-7) package, rated for 55 V VDS, 4.9 mΩ RDS(on) at VGS = 10 V, and 120 A continuous drain current at TC = 25°C. It features 175°C maximum junction temperature, fast switching (tr = 140 ns, tf = 130 ns), and rated repetitive avalanche capability up to TJmax. It is used in high-current DC-DC converters and motor drive half-bridges.
For engineers reviewing the AUXAKF1405ZS-7P datasheet, AUXAKF1405ZS-7P pinout, AUXAKF1405ZS-7P application, or AUXAKF1405ZS-7P equivalent, key selection criteria include its ultra-low RDS(on), validated avalanche energy (EAS = 250 mJ), thermal resistance (RθJC = 0.65 °C/W), body diode performance (VSD = 1.3 V, trr = 63–95 ns), and D2PAK-7L footprint compatibility with high-power PCB layouts.
Technical Context
This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust switching behavior. Its gate charge profile (Qg = 150–230 nC, Qgd = 64 nC) supports efficient hard-switching in synchronous buck and H-bridge topologies, and its low Ciss (5360 pF) and Coss (1310 pF) reduce capacitive losses at high frequencies.
The device integrates a co-packaged, optimized body diode with low forward voltage (VSD ≤ 1.3 V) and controlled reverse recovery (Qrr = 160–240 nC), enabling reliable operation in freewheeling and bidirectional current paths without external Schottky supplementation in many 48 V industrial systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V nominal bus systems with 20% transient margin. |
| RDS(on) | 4.9 mΩ max @ VGS = 10 V, TJ = 25°C - Enables <1 W conduction loss at 100 A, critical for high-efficiency power stages. |
| ID (cont) | 120 A @ TC = 25°C - Confirmed silicon-limited rating; derates to ~75 A at TC = 100°C per Fig. 9. |
| EAS | 250 mJ - Single-pulse avalanche energy tested and 100% production-verified; allows unclamped inductive turn-off without failure. |
| RθJC | 0.65 °C/W - Junction-to-case thermal resistance measured on FR-4 PCB; enables direct heatsink mounting with minimal thermal interface resistance. |
| tr/tf | 140 ns / 130 ns - Rise/fall times measured at VDD = 25 V, ID = 88 A, RG = 5 Ω; supports >200 kHz switching in hard-switched converters. |
| Qgd | 64 nC - Gate-to-drain (Miller) charge; determines dv/dt immunity and gate drive strength requirement during Miller plateau. |
Pinout & Package
Package: D2PAK-7L (TO-263-7), surface-mount, thermally enhanced with exposed drain pad. Pin 1–7 arranged linearly; pins 1–3 and 5–7 are source terminals; pin 4 is gate; drain connected to backside metal tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7 | Source (S) | Multiple parallel source connections reduce bondwire inductance and improve current sharing; lowers effective RDS(on) and improves EMI. |
| 4 | Gate (G) | Single gate input with low input capacitance (Ciss = 5360 pF); requires ≥10 V drive for full enhancement and minimal RDS(on). |
| Drain Tab | Drain (D) | Exposed copper drain pad on underside; primary thermal path to PCB heatsink; electrically tied to internal die drain structure. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 4.9 mΩ max at 10 V drive - reduces I²R loss by >30% vs. legacy 55 V MOSFETs in 100 A applications. |
| 175°C junction rating | Rated operation up to 175°C - extends lifetime in sealed enclosures and high-ambient environments without derating. |
| Repetitive avalanche capability | Validated to 100% production test at EAS = 250 mJ - eliminates need for external snubbers in inductive load switching. |
| Optimized body diode | VSD ≤ 1.3 V, trr = 63–95 ns - enables efficient synchronous rectification and reduces shoot-through risk in half-bridge freewheeling. |
| Low gate charge asymmetry | Qgs:Qgd ≈ 37:64 nC - balances turn-on speed and Miller immunity, supporting stable gate drive with standard 1–2 A drivers. |
Applications
| High-Efficiency DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: 48 V input, 12 V output synchronous buck converter delivering 100 A to server VRMs. IC Role / Device Role / Timing Role: High-side power switch operating at 250 kHz with forced PWM mode; handles peak currents up to 120 A. Use Value: 4.9 mΩ RDS(on) limits conduction loss to 49 W at 100 A, enabling >95% efficiency without liquid cooling. |
Use Scenario: Half-bridge inverter stage for 3 kW BLDC motor control in factory automation. IC Role / Device Role / Timing Role: Low-side switching element in three-phase leg; commutates 88 A RMS with 100% duty cycle capability at TC = 85°C. Use Value: Repetitive avalanche rating ensures safe turn-off during phase current reversal transients without external clamping. |
| Uninterruptible Power Supplies | Electric Vehicle Onboard Chargers |
Use Scenario: Bidirectional DC-DC stage in 3 kVA UPS transferring power between 48 V battery bank and 380 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier in boost mode; conducts reverse current up to 120 A with body diode conduction during dead-time. Use Value: Low VSD (≤1.3 V) and fast trr (63 ns typical) minimize reverse conduction loss and reduce EMI during zero-voltage switching transitions. |
Use Scenario: Primary-side switch in 6.6 kW OBC PFC + LLC stage operating from 200–450 V input range. IC Role / Device Role / Timing Role: Clamp switch in active clamp forward topology; absorbs leakage inductance energy during reset. Use Value: 250 mJ EAS and 0.65 °C/W RθJC allow reliable clamping of >100 V spikes at 50 kHz without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 55 V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF8AG | RDS(on) = 3.2 mΩ (lower), but only rated to 150°C TJ; no production-tested EAS spec. | Lacks validated avalanche rating; unsuitable for unclamped inductive loads unless externally protected. | Prefer where conduction loss dominates and avalanche stress is absent; verify thermal design at 150°C limit. |
| IXFH50N55X3 | RDS(on) = 5.5 mΩ (higher), but specified for 200°C TJ and includes 300 mJ EAS (tested). | Better thermal margin and higher avalanche robustness; larger TO-247-3 package increases layout area. | Prefer where ambient exceeds 105°C or system-level reliability mandates >250 mJ avalanche margin. |
Compared with STL220N5LF8AG and IXFH50N55X3, AUXAKF1405ZS-7P delivers optimal balance of ultra-low RDS(on), production-validated avalanche energy, and compact D2PAK-7L footprint-making it ideal for space-constrained, high-reliability 48 V industrial power stages where both efficiency and ruggedness are required.
Availability
AUXAKF1405ZS-7P is available at Aetrix Electronics and suitable for high-current DC-DC converters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AUXAKF1405ZS-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including power MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability, high-efficiency power solutions for industrial and automotive markets.
AUXAKF1405ZS-7P belongs to the HEXFET® family, engineered specifically for high-current, high-frequency switching applications demanding low RDS(on), robust avalanche capability, and thermal resilience in compact surface-mount packages.
FAQ
What is the maximum continuous drain current for AUXAKF1405ZS-7P at 100°C case temperature?
At TC = 100°C, the continuous drain current is 75 A, as confirmed in Figure 9 of the official datasheet. This reflects thermal derating due to reduced channel mobility and increased RDS(on) at elevated temperatures, not package limitation. The device remains within safe SOA boundaries up to this point when mounted on a 1" square FR-4 PCB with proper copper pour.
Does AUXAKF1405ZS-7P support gate drive voltages below 10 V?
Yes - VGS(th) ranges from 2.0 V to 4.0 V, so the device begins conducting at low gate voltages. However, RDS(on) rises sharply below 10 V: at VGS = 4.5 V, RDS(on) is typically 12 mΩ (over 2× higher than at 10 V). For full-rated performance and minimal conduction loss, 10 V–15 V gate drive is recommended.
Is the body diode in AUXAKF1405ZS-7P suitable for synchronous rectification?
Yes - the integrated body diode has VSD ≤ 1.3 V at IS = 88 A and trr = 63–95 ns, with Qrr = 160–240 nC. These parameters enable efficient synchronous rectification in buck and LLC topologies, especially when paired with precise gate timing to minimize reverse recovery losses and cross-conduction risk.
What is the recommended PCB footprint and thermal layout for AUXAKF1405ZS-7P?
The recommended footprint follows Vishay Application Note AN-994: 1" square copper pad (25.4 mm × 25.4 mm) on 2 oz. FR-4, with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground/power planes. Solder mask defined pads ensure full drain tab contact; minimum solder stencil aperture matches land pattern to avoid voiding.
AUXAKF1405ZS-7P Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 88A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK (7-Lead)
AUXAKF1405ZS-7P FAQ
1.How can I place an order for AUXAKF1405ZS-7P through Aetrix?
Please submit a Request for Quotation (RFQ) for AUXAKF1405ZS-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUXAKF1405ZS-7P reliable?
The price and inventory of AUXAKF1405ZS-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUXAKF1405ZS-7P is usually 5 days.
3.What payment methods are accepted for AUXAKF1405ZS-7P?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUXAKF1405ZS-7P transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUXAKF1405ZS-7P?
AUXAKF1405ZS-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUXAKF1405ZS-7P order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUXAKF1405ZS-7P?
For technical support, including AUXAKF1405ZS-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUXAKF1405ZS-7P requirements.
6.How does Aetrix verify that AUXAKF1405ZS-7P is sourced from the original manufacturer or authorized distributors?
All AUXAKF1405ZS-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUXAKF1405ZS-7P meets industry standards.
7.What is the process for return or replacement of AUXAKF1405ZS-7P?
All AUXAKF1405ZS-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUXAKF1405ZS-7P, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUXAKF1405ZS-7P part is unused and in its original packaging.
Return procedure for AUXAKF1405ZS-7P:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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