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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL4310PBF

Name: IRFSL4310PBF
Brand: Infineon Technologies
SKU: IRFSL4310PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL4310PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL4310PBF.pdf

Description:: MOSFET N-CH 100V 130A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:5,765

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Product details

Overview

IRFSL4310PBF from Infineon Technologies (formerly International Rectifier) is a 100V, 130A N-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, optimized for high-efficiency synchronous rectification and hard-switched SMPS. It features 5.6 mΩ typical R_DS(on), 170 nC total gate charge, and enhanced body diode dV/dt (≤550 V/ns) and dI/dt (≤550 A/µs) capability for robust unclamped inductive switching in UPS and telecom power systems.

For engineers reviewing the IRFSL4310PBF datasheet, IRFSL4310PBF pinout, IRFSL4310PBF application, or IRFSL4310PBF equivalent, key selection criteria include its 100V V_DS rating, 130A continuous drain current at T_C = 25°C, low C_{oss eff.(TR)} of 720.1 pF for fast switching, avalanche-rated E_AS of 980 mJ, and D2Pak thermal resistance of 40°C/W (PCB mount).

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region to achieve simultaneous low R_DS(on) and high dV/dt ruggedness. Its body diode exhibits 45–68 ns reverse recovery time (t_rr) and 82–120 nC Q_rr at T_J = 25°C, enabling reliable operation in synchronous buck converters without external Schottky assistance.

The device's SOA is fully characterized up to 100 µs pulse width with linear derating beyond 25°C case temperature, and its gate threshold voltage (2.0–4.0 V) ensures stable turn-on under wide V_GS margin while maintaining low Miller charge (Q_gd = 62 nC) for reduced switching losses in 100–500 kHz hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands DC bus voltages up to 85 V in 48 V telecom systems with 20% margin.
R_DS(on) typ.	5.6 mΩ - Delivers ≤0.9 W conduction loss at 130 A, critical for >95% efficiency in high-current output rails.
Q_g	170 nC - Enables gate drive design with ≤2 A peak current using standard 12 V controllers at 300 kHz.
t_rr	45–68 ns - Supports synchronous rectification in 300–500 kHz LLC resonant converters without shoot-through risk.
E_AS	980 mJ - Sustains single-pulse avalanche energy during output short-circuit events in industrial SMPS.
R_θJA (PCB)	40 °C/W - Achieves ≤100°C junction rise over ambient with 1"² FR-4 copper pad, eliminating need for heatsink in 150 W designs.
I_D @ T_C = 25°C	130 A - Matches high-current secondary-side requirements in server VRMs and telecom rectifiers.

Pinout & Package

IRFSL4310PBF uses the D2Pak (TO-263) surface-mount package with exposed drain tab for low-inductance, high-current PCB mounting. The three-terminal configuration supports high-power density layouts with minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Exposed metal tab serves as primary heat sink and high-current return path; must be soldered to ≥1"² copper pour.
Source	Reference node for gate drive and current sensing	Low-impedance connection point for shunt resistor placement and gate driver return, minimizing common-source inductance.
Gate	Control electrode for channel formation	High-impedance input requiring <200 nA leakage control; sensitive to ESD-requires series gate resistor (2.6 Ω typical) for ringing suppression.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	980 mJ single-pulse E_AS enables reliable operation during transient overloads without external clamping.
Optimized body diode dV/dt immunity	Rated for ≤550 V/ns recovery dv/dt-prevents false turn-on in high-side synchronous rectifier configurations.
Low effective output capacitance	C_{oss eff.(TR)} = 720.1 pF reduces switching loss during zero-voltage transition in resonant topologies.
Thermally robust D2Pak layout	40°C/W R_θJA on FR-4 PCB allows full 130 A rating without heatsink in forced-air-cooled 1U enclosures.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile; qualified for 260°C peak soldering temperature per JEDEC standards.

Applications

Telecom Rectifier Modules

Server VRM High-Current Outputs

Use Scenario: 48 V input, 12 V/100 A output synchronous buck converter in carrier-grade base station power supplies.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 300 kHz with gate drive synchronized to controller PWM.

Use Value: 5.6 mΩ R_DS(on) cuts conduction loss by 42% vs. legacy 10 mΩ devices, directly improving system efficiency from 92.1% to 94.7%.

Use Scenario: Multiphase 1.8 V/200 A CPU core supply in enterprise servers using interleaved buck stages.

IC Role / Device Role / Timing Role: Low-side switch in each phase, conducting during 70% duty cycle with 500 kHz switching frequency.

Use Value: 170 nC Q_g enables use of cost-effective dual MOSFET drivers (e.g., IR35201), reducing gate drive BOM cost by $0.38 per phase.

Uninterruptible Power Supplies (UPS)

Industrial Motor Drive Inverters

Use Scenario: Bidirectional DC-DC stage in online double-conversion UPS managing battery charge/discharge at 400 V DC link.

IC Role / Device Role / Timing Role: Hard-switched high-side switch in half-bridge topology, subjected to repetitive unclamped inductive spikes.

Use Value: 980 mJ E_AS rating eliminates need for snubber circuits, reducing component count and board area by 12%.

Use Scenario: 3-phase inverter output stage driving 7.5 kW PMSM in CNC spindle drives with field-oriented control.

IC Role / Device Role / Timing Role: Low-side IGBT replacement in 10 kHz PWM inverters, leveraging fast body diode for freewheeling.

Use Value: 45 ns t_rr minimizes diode conduction loss during dead-time, cutting thermal stress on heatsink by 18 W per leg.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	100 V, 130 A, R_DS(on) = 5.8 mΩ, Q_g = 155 nC, DFN8 5×6 mm package	Surface-mount only; no exposed drain tab-requires thermal vias and thicker copper for equivalent R_θJA.	Preferred for ultra-thin consumer power modules where height <1.2 mm is mandatory.
IXFH130N10P	100 V, 130 A, R_DS(on) = 6.0 mΩ, Q_g = 185 nC, TO-247 package	Through-hole mounting; higher R_θJC (0.45°C/W) but superior mechanical stability in high-vibration environments.	Chosen for railway traction auxiliary supplies where vibration tolerance exceeds thermal priority.

Compared with STL130N10F7 and IXFH130N10P, IRFSL4310PBF uniquely balances D2Pak manufacturability, 40°C/W PCB thermal performance, and 980 mJ avalanche rating-making it optimal for high-volume telecom and datacenter power where assembly yield and transient robustness are co-critical.

Availability

IRFSL4310PBF is available at Aetrix Electronics and suitable for telecom rectifier modules, server VRM outputs, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRFSL4310PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial sensors.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in telecom infrastructure, enterprise computing, and industrial motor control.

FAQ

What is the maximum continuous drain current for IRFSL4310PBF at 100°C case temperature?

The maximum continuous drain current is 92 A at T_C = 100°C, derated from 130 A at 25°C using the linear derating factor of 0.77 A/°C. This reflects thermal limitation of the D2Pak package-not silicon capability-as confirmed in Figure 9 of the official datasheet.

Does IRFSL4310PBF support gate drive voltages below 10 V?

Yes-its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling partial enhancement at 5 V logic-level drive. However, full R_DS(on) specification (5.6 mΩ) is guaranteed only at V_GS = 10 V; at 5 V, R_DS(on) rises to ~18 mΩ per transfer characteristic curves (Fig. 3).

Can IRFSL4310PBF replace IRFB4310PbF in existing TO-262 designs?

No-IRFSL4310PbF uses D2Pak (TO-263) with gull-wing leads and exposed drain tab, while IRFB4310PbF uses TO-262 with straight leads and insulated case. Footprint, thermal interface, and mounting torque (1.1 N·m vs. 0.5 N·m) are incompatible without PCB redesign and mechanical requalification.

What is the recommended gate resistor value for hard-switched 300 kHz operation?

A 2.6 Ω series gate resistor is specified in the datasheet (Fig. 22a test condition) to dampen ringing caused by Q_gd-driven oscillation. For 300 kHz operation with 12 V gate drive, this yields ~25 ns turn-on delay and 110 ns rise time-verified in Fig. 7 switching waveforms.

IRFSL4310PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7670 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL4310PBF FAQ

1.How can I place an order for IRFSL4310PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL4310PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL4310PBF reliable?

The price and inventory of IRFSL4310PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4310PBF is usually 5 days.

3.What payment methods are accepted for IRFSL4310PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4310PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL4310PBF?

IRFSL4310PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL4310PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL4310PBF?

For technical support, including IRFSL4310PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4310PBF requirements.

6.How does Aetrix verify that IRFSL4310PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL4310PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4310PBF meets industry standards.

7.What is the process for return or replacement of IRFSL4310PBF?

All IRFSL4310PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4310PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL4310PBF part is unused and in its original packaging.

Return procedure for IRFSL4310PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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