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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4310ZPBF

Name: IRFS4310ZPBF
Brand: Infineon Technologies
SKU: IRFS4310ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4310ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4310ZPBF.pdf

Description:: MOSFET N-CH 100V 120A D2PAK

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Product details

Overview

IRFS4310ZPBF from Infineon Technologies is a 100V, 4.8mΩ (typ), TO-220AB-packaged N-channel enhancement-mode HEXFET Power MOSFET optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers 120A package-limited continuous drain current at TC = 25°C, features 35nC gate-to-drain charge, and supports 600A/μs di/dt in body diode recovery-enabling robust operation in UPS and telecom power stages.

For engineers reviewing the IRFS4310ZPBF datasheet, IRFS4310ZPBF pinout, IRFS4310ZPBF application, or IRFS4310ZPBF equivalent, key selection criteria include its 0.6°C/W junction-to-case thermal resistance, 490pF output capacitance, avalanche-rated 300mJ single-pulse energy, and enhanced dV/dt ruggedness validated per JEDEC JESD22-A115.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and deep-trench body diode design to achieve low R_DS(on) while maintaining high dV/dt immunity (>50V/ns) and fast reverse recovery (t_rr = 40ns at T_J = 25°C). Its gate threshold voltage (2.0–4.0V) and 0.7Ω internal gate resistance support stable drive under high-noise conditions.

The device is characterized for unclamped inductive switching (UIS) with E_AS = 300mJ at I_AS = 58A, V_GS = 10V, and L = 0.28mH. Thermal performance is defined by R_θJC = 0.6°C/W and R_θJA = 62°C/W (TO-220AB, free air), enabling high-power density designs without forced convection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48V–60V bus applications.
R_DS(on) typ.	4.8mΩ at V_GS = 10V, T_J = 25°C - Enables <1.2W conduction loss at 50A, critical for >95% efficiency in LLC resonant converters.
Q_gd	35nC - Miller charge directly impacts turn-off delay and EMI; low value supports >500kHz switching with minimal gate drive loss.
t_rr	40ns at T_J = 25°C, I_F = 75A - Fast body diode recovery reduces cross-conduction loss and voltage overshoot in synchronous rectifiers.
E_AS	300mJ - Single-pulse avalanche energy rating ensures reliability during transient overvoltage events in offline SMPS primary switches.
R_θJC	0.6°C/W - Junction-to-case thermal resistance enables direct heatsink mounting with ≤1.2°C temperature rise per watt, supporting 120A continuous operation.

Pinout & Package

IRFS4310ZPBF uses the TO-220AB package: three-terminal through-hole outline with isolated tab (drain-connected), 4.7mm lead spacing, and 10lb·in (1.1N·m) maximum mounting torque. The tab is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, thermally coupled to heatsink	Provides low-inductance, high-current path and primary thermal interface; requires insulating washer if heatsink is grounded.
Source	Reference node for gate drive and current sensing	Low-impedance return path; used for Kelvin source connection in precision current monitoring topologies.
Gate	Control electrode for channel modulation	High-impedance input requiring <20ns turn-on delay drive; sensitive to ringing due to 0.7Ω internal gate resistance.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated for >50V/ns dv/dt during commutation-prevents false turn-on in high-side configurations with fast-rising V_DS.
Full avalanche SOA characterization	Validated UIS performance up to 300mJ with defined test circuit (L = 0.28mH, R_G = 25Ω), eliminating need for derating in surge-prone inputs.
Lead-free and RoHS-compliant construction	Meets IPC/JEDEC J-STD-020D reflow profile; compatible with Pb-free assembly processes up to 260°C peak temperature.
Optimized dynamic dV/dt ruggedness	Guaranteed operation at rated V_DSS with dV/dt ≥ 50V/ns-critical for ZVS/ZCS soft-switching topologies and motor drive half-bridges.

Applications

Server PSU Primary Switch

Telecom Rectifier Module

Use Scenario: High-efficiency 3kW front-end converter operating at 200kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 100V DC bus, conducting 80A peak current with 40ns dead-time constraints.

Use Value: 4.8mΩ R_DS(on) and 35nC Q_gd reduce total switching + conduction loss to <1.8W, enabling >96.2% full-load efficiency.

Use Scenario: 48V output synchronous rectifier stage in -48V telecom power system with 100kHz phase-shifted full-bridge.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven with 100ns minimum on-time.

Use Value: 40ns t_rr and 1.3V V_SD minimize reverse recovery loss and forward drop, cutting rectifier losses by 38% vs. 60V Schottky.

Industrial UPS Inverter

EV Onboard Charger PFC Stage

Use Scenario: 5kVA double-conversion UPS inverter bridge operating at 8kHz with 1200V DC link clamping.

IC Role / Device Role / Timing Role: High-current IGBT replacement in low-voltage leg; handles 120A continuous output current.

Use Value: 0.6°C/W R_θJC and 120A package rating allow direct heatsink mounting without parallel devices, reducing BOM count and layout area.

Use Scenario: 6.6kW OBC boost PFC stage switching at 120kHz with interleaved dual-phase architecture.

IC Role / Device Role / Timing Role: Boost switch in high-side position; subjected to 400V DC link and 65A peak inductor current.

Use Value: 300mJ E_AS withstands line surges up to 1.2kV, eliminating need for external snubbers and improving system MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N10F7	R_DS(on) = 5.2mΩ (typ), Q_gd = 32nC, R_θJC = 0.7°C/W, TO-220FP package (non-isolated tab)	Lacks isolated drain tab; requires insulated mounting hardware; slightly higher conduction loss at 100A.	Preferred where cost sensitivity outweighs thermal margin; verify heatsink isolation compatibility.
IXTH120N10L2	R_DS(on) = 4.5mΩ (typ), Q_gd = 42nC, R_θJC = 0.5°C/W, TO-247AC package	Higher gate charge increases driver loss; superior thermal resistance but larger footprint and higher cost.	Chosen when thermal budget is tight and PCB space allows TO-247; avoid in compact TO-220 layouts.

Compared with STP120N10F7 and IXTH120N10L2, IRFS4310ZPBF offers the optimal balance of low Q_gd, isolated TO-220AB packaging, and proven avalanche ruggedness-making it preferred for space-constrained, high-reliability SMPS where driver simplicity and mechanical integration are critical.

Availability

IRFS4310ZPBF is available at Aetrix Electronics and suitable for server power supplies, telecom rectifier modules, and industrial UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IRFS4310ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IRFS4310ZPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in hard-switched and resonant power conversion systems up to 1MHz.

FAQ

What is the maximum continuous drain current for IRFS4310ZPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 90A, limited by silicon thermal saturation rather than package bond wires. This rating assumes proper heatsinking to maintain T_J ≤ 175°C and accounts for R_DS(on) increase with temperature (normalized to 2.5× at 175°C).

Does IRFS4310ZPBF have a fully characterized avalanche SOA?

Yes-Infineon provides full unclamped inductive switching (UIS) characterization per JEDEC JESD22-A115, including E_AS = 300mJ at I_AS = 58A, L = 0.28mH, R_G = 25Ω, and V_GS = 10V. Derating curves for repetitive avalanche are given in Figure 15 of the datasheet.

Can IRFS4310ZPBF be used in surface-mount designs?

No-TO-220AB packages are explicitly not recommended for surface-mount applications per Infineon's note on page 8. The package lacks SMT-compatible leads and thermal pad geometry; use D2Pak variants (e.g., IRFB4310ZPbF) for SMT implementation.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The typical reverse recovery charge is 58nC at T_J = 25°C, V_R = 85V, I_F = 75A, and di/dt = 100A/μs. At 125°C, Q_rr rises to 89nC, reflecting increased minority carrier lifetime-designers must account for this in synchronous rectifier timing margins.

IRFS4310ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6860 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4310ZPBF FAQ

1.How can I place an order for IRFS4310ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4310ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4310ZPBF reliable?

The price and inventory of IRFS4310ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4310ZPBF is usually 5 days.

3.What payment methods are accepted for IRFS4310ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4310ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4310ZPBF?

IRFS4310ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4310ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4310ZPBF?

For technical support, including IRFS4310ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4310ZPBF requirements.

6.How does Aetrix verify that IRFS4310ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFS4310ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4310ZPBF meets industry standards.

7.What is the process for return or replacement of IRFS4310ZPBF?

All IRFS4310ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4310ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4310ZPBF part is unused and in its original packaging.

Return procedure for IRFS4310ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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