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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL38N20DPBF

Name: IRFSL38N20DPBF
Brand: Infineon Technologies
SKU: IRFSL38N20DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL38N20DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL38N20DPBF.pdf

Description:: MOSFET N-CH 200V 43A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL38N20DPBF from Infineon is a 200 V, 43 A (T_C = 25°C), N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, with R_DS(on) ≤ 54 mΩ at V_GS = 10 V and rated for 175 °C junction operation. It delivers robust avalanche energy handling (E_AS = 460 mJ), low gate charge (Q_g = 60–91 nC), and fast switching (t_r = 95 ns, t_f = 47 ns) for high-efficiency DC-DC converters and plasma display drivers.

For engineers reviewing the IRFSL38N20DPBF datasheet, IRFSL38N20DPBF pinout, IRFSL38N20DPBF application, or IRFSL38N20DPBF equivalent, key selection criteria include its 260 V unclamped avalanche rating, 0.47 °C/W junction-to-case thermal resistance, body diode recovery performance (trr = 160–240 ns), and suitability for hard-switched 200 V industrial power stages requiring high pulse current capability (I_DM = 180 A).

Technical Context

This MOSFET employs planar silicon process technology optimized for high-voltage, high-current switching with minimized Miller capacitance (C_rss = 73 pF) and characterized effective output capacitance (C_{oss_eff} = 380 pF). Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device integrates a fast, low-loss intrinsic body diode (V_SD ≤ 1.5 V at I_S = 26 A, T_J = 25°C) with controlled reverse recovery (Q_rr = 1.3–2.0 µC, trr = 160–240 ns), enabling use in synchronous rectification and freewheeling paths without external Schottky supplementation in many 200 V applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum blocking voltage for primary-side switches in 200 V bus systems (e.g., telecom PSUs, industrial AC/DC front-ends)
R_DS(on) max @ 10 V	54 mΩ - Conduction loss of ≤ 0.06 W at 10 A continuous drain current, enabling compact heatsink design
I_D @ T_C = 25°C	43 A - Continuous current rating under ideal heatsinking, supporting >500 W power conversion stages
E_AS	460 mJ - Single-pulse avalanche energy tolerance allows safe operation during inductive turn-off transients without snubbers
Q_g	60–91 nC - Gate drive energy requirement determines driver IC selection and switching loss trade-off at 100–500 kHz
t_r/t_f	95 ns / 47 ns - Fast edge rates reduce switching transition time, critical for minimizing losses in high-frequency DC-DC topologies
R_θJC	0.47 °C/W - Thermal path efficiency enables direct mounting to cold plates or heatsinks with minimal thermal interface resistance penalty

Pinout & Package

IRFSL38N20DPBF is housed in a TO-262 (ISOTOP) package with three terminals: Gate (G), Drain (D), and Source (S). The package features isolated metal tab (Drain-connected) for direct heatsinking and screw-mount compatibility.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level signal to fully enhance channel; requires <91 nC total charge for full turn-on
D	Drain (high-side switch node)	Connected to internal die backside and metal tab; electrically tied to heatsink; must be isolated from ground plane
S	Source (return path)	Reference node for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low Q_gd/Q_gs ratio	28–42 nC / 17–25 nC = ~1.6–2.5 - Reduces Miller-induced shoot-through risk in half-bridge configurations
Fully characterized C_{oss_eff}	380 pF - Enables accurate soft-switching timing prediction and resonant converter design without iterative measurement
Lead-free construction	RoHS-compliant finish with Pb-free solderability per J-STD-020 - Supports automated reflow and wave soldering processes
Avalanche-rated	V_{DS(Avalanche)} ≥ 260 V - Guarantees ruggedness against voltage spikes exceeding nominal 200 V rating during fault conditions
High-temperature operation	T_J(max) = 175 °C - Allows derated operation in sealed enclosures or high-ambient environments up to 125 °C case temperature

Applications

Plasma Display Panel (PDP) Sustain Circuit

Industrial DC-DC Converter Primary Switch

Use Scenario: Driving sustain electrodes in AC plasma displays requiring rapid 200 V switching at 200–500 kHz.

IC Role / Device Role / Timing Role: High-side power switch controlling bidirectional sustain pulses across display cells.

Use Value: Low R_DS(on) minimizes conduction loss during long duty cycles; fast t_f ensures clean voltage transitions critical for pixel uniformity.

Use Scenario: Primary-side switch in isolated 200 V input, 12–48 V output flyback or forward converters for factory automation equipment.

IC Role / Device Role / Timing Role: Main power transistor handling full input voltage and peak current during PWM on-time.

Use Value: 460 mJ E_AS withstands leakage inductance spikes without clamping; 0.47 °C/W R_θJC supports forced-air cooling in space-constrained enclosures.

Motor Drive Half-Bridge Leg

Uninterruptible Power Supply (UPS) Inverter Stage

Use Scenario: Upper switch in 3-phase IGBT/MOSFET inverter driving 200 V DC bus industrial motors (e.g., pumps, compressors).

IC Role / Device Role / Timing Role: High-side switching element in bridge leg, commutating inductive motor current.

Use Value: Body diode trr = 160–240 ns and Q_rr = 1.3–2.0 µC limit reverse recovery losses during cross-conduction; 180 A I_DM handles motor stall currents.

Use Scenario: Output stage switch in online UPS inverters converting 200 V DC battery bank to 230 V AC line output.

IC Role / Device Role / Timing Role: Hard-switched power switch in full-bridge inverter topology operating at 10–20 kHz.

Use Value: 260 V avalanche rating provides margin against bus overvoltage during load dump or regeneration; 175 °C T_J(max) ensures reliability under sustained overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB38N20DPBF	Same die, TO-220AB package; R_θJC = 0.47 °C/W (same), but lower mechanical robustness and no screw-mount option	Preferred where PCB through-hole mounting suffices and heatsink attachment is via clip or thermal pad only	Select when footprint constraints favor TO-220 and screw-mount is unnecessary
STP20NM20	200 V, 20 A, R_DS(on) = 80 mΩ; lower current rating, higher on-resistance, no published E_AS spec	Suitable only for lower-power (<200 W) applications with relaxed thermal and ruggedness requirements	Choose only if cost sensitivity outweighs performance and reliability needs in non-critical designs

Compared with IRFB38N20DPBF and STP20NM20, IRFSL38N20DPBF uniquely combines TO-262 mechanical stability, full 43 A current rating, and verified 460 mJ avalanche capability-making it optimal for industrial-grade 200 V switching where thermal management and fault tolerance are prioritized.

Availability

IRFSL38N20DPBF is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, industrial DC-DC converters, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRFSL38N20DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power supplies, motor drives, and lighting systems operating at 100–250 V DC bus voltages.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current for IRFSL38N20DPBF at T_C = 100°C is 30 A when driven with V_GS = 10 V. This derating reflects thermal limits of the TO-262 package and silicon die; operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 175°C.

Does IRFSL38N20DPBF have a specified gate charge profile?

Yes-total gate charge (Q_g) is specified as 60–91 nC at V_DS = 100 V and I_D = 26 A. Gate-to-source (Q_gs) and gate-to-drain (Q_gd) charges are 17–25 nC and 28–42 nC respectively, enabling precise gate driver sizing and switching loss calculation per IEEE 1547-compliant designs.

Can IRFSL38N20DPBF replace IRFB38N20DPBF in existing TO-220 layouts?

No-IRFSL38N20DPBF uses TO-262 (ISOTOP) package with different pin spacing, mounting hole pattern, and tab geometry than TO-220AB. Direct replacement requires PCB redesign, heatsink adapter, and mechanical validation; electrical parameters are identical, but thermal and mechanical integration differs significantly.

What is the typical reverse recovery charge of the body diode?

The body diode's reverse recovery charge (Q_rr) is 1.3–2.0 µC under test conditions of I_F = 26 A, di/dt = 100 A/µs, and T_J = 25°C. This value is critical for calculating commutation losses in synchronous rectifiers and half-bridge freewheeling paths, and is fully characterized per datasheet Figure 13.

IRFSL38N20DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 54mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 91 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL38N20DPBF FAQ

1.How can I place an order for IRFSL38N20DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL38N20DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL38N20DPBF reliable?

The price and inventory of IRFSL38N20DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL38N20DPBF is usually 5 days.

3.What payment methods are accepted for IRFSL38N20DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL38N20DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL38N20DPBF?

IRFSL38N20DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL38N20DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL38N20DPBF?

For technical support, including IRFSL38N20DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL38N20DPBF requirements.

6.How does Aetrix verify that IRFSL38N20DPBF is sourced from the original manufacturer or authorized distributors?

All IRFSL38N20DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL38N20DPBF meets industry standards.

7.What is the process for return or replacement of IRFSL38N20DPBF?

All IRFSL38N20DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL38N20DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL38N20DPBF part is unused and in its original packaging.

Return procedure for IRFSL38N20DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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