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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6215LPBF

Name: IRF6215LPBF
Brand: Infineon Technologies
SKU: IRF6215LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6215LPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF6215LPBF.pdf

Description:: MOSFET P-CH 150V 13A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:6,672

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Product details

Overview

IRF6215LPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-262 (I2PAK) package, rated for -150 V V_DSS, 12 A I_D (T_C = 25°C), and R_DS(on) ≤ 0.28 Ω at V_GS = -10 V. It serves as a high-side load switch in industrial power supplies and motor control H-bridge legs.

For engineers reviewing the IRF6215LPBF datasheet, IRF6215LPBF pinout, IRF6215LPBF application, or IRF6215LPBF equivalent, key selection criteria include its negative gate threshold (–2.0 to –4.0 V), low gate charge (Q_g = 42 nC), and avalanche-rated ruggedness for inductive switching.

Technical Context

This MOSFET employs planar stripe cell structure with optimized doping profile to achieve stable R_DS(on) over temperature and robust short-circuit withstand time (t_SC = 10 µs at T_J = 25°C). Its gate oxide thickness and field plate design support reliable operation under repetitive unclamped inductive switching (UIS).

The device features integrated body diode with reverse recovery time t_rr = 170 ns and Q_rr = 290 nC at I_F = 12 A, enabling use in synchronous rectification and freewheeling paths without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–150 V: Maximum drain-source blocking voltage for high-side switch in 100–120 VAC input-derived rails.
R_DS(on)	≤ 0.28 Ω @ V_GS = –10 V: Enables <1.0 W conduction loss at 6 A continuous drain current.
Q_g	42 nC: Determines gate drive energy requirement; compatible with standard 1-A peak gate drivers.
t_rr	170 ns: Limits diode reverse recovery losses during hard-switched PWM transitions.
E_AS	320 mJ: Specifies single-pulse avalanche energy rating for protection against inductive kickback.
T_J max	175 °C: Supports operation in sealed enclosures with limited airflow up to 125 °C ambient.

Pinout & Package

Package: TO-262 (I2PAK), surface-mount variant of TO-220 with isolated tab, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically connected to metal tab; requires insulated mounting when used on heatsink.
Source	Reference node for gate drive	Common return for load current and gate driver ground reference.
Gate	Control terminal	High-impedance input requiring <42 nC charge for full enhancement; sensitive to ESD.

Key Features

Feature	Design Value
100% UIS tested	Guarantees avalanche capability per JEDEC JESD22-A116 without derating.
Low gate charge	Reduces switching losses and allows use with low-power gate drivers in space-constrained designs.
Fast body diode	Enables efficient freewheeling in half-bridge topologies without snubber networks.
Lead-free and RoHS compliant	Meets EU Directive 2011/65/EU; no exemption required for Pb content.

Applications

Industrial Motor Drives

DC-DC Converter High-Side Switch

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans or pumps.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling phase voltage polarity and timing via PWM gate signal.

Use Value: Low R_DS(on) minimizes conduction loss at 12 A peak; fast body diode reduces shoot-through risk during dead-time.

Use Scenario: Synchronous rectifier in non-isolated buck converter for FPGA core voltage regulation.

IC Role / Device Role / Timing Role: Active switch replacing Schottky diode to reduce forward voltage drop and improve efficiency.

Use Value: R_DS(on) ≤ 0.28 Ω cuts conduction loss by >40% vs. 0.5 V Schottky at 8 A load.

Uninterruptible Power Supplies

Automotive Body Control Modules

Use Scenario: Battery backup path selector in line-interactive UPS with automatic transfer switching.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch isolating battery from inverter input during AC mode.

Use Value: –150 V rating accommodates 48 V battery stack + surge margin; avalanche rating handles load dump transients.

Use Scenario: Window lift/lower circuit in door module with overcurrent and thermal shutdown.

IC Role / Device Role / Timing Role: Load switch with integrated safe operating area (SOA) compliance for 12 V automotive battery interface.

Use Value: 175 °C junction rating ensures reliability under hood temperatures; 100% UIS test covers load dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12PF06	V_DSS = –60 V, R_DS(on) = 0.22 Ω @ –10 V, Q_g = 35 nC	Limited to ≤60 V systems; lower gate charge reduces drive loss but insufficient for 100 VAC-derived rails.	Select only if system maximum bus voltage remains below 60 V and thermal margin permits higher R_DS(on) at elevated T_J.
IXTP12P15X4	V_DSS = –150 V, R_DS(on) = 0.25 Ω @ –10 V, Q_g = 38 nC, TO-220 package	Same voltage rating and improved R_DS(on), but TO-220 requires through-hole assembly and lacks isolated tab.	Prefer for prototyping or legacy PCBs with TO-220 footprints; avoid where surface-mount and thermal isolation are mandatory.

Compared with STP12PF06 and IXTP12P15X4, IRF6215LPBF offers optimal balance of 150 V rating, surface-mount TO-262 packaging with isolated tab, and proven avalanche ruggedness-critical for industrial motor drives and UPS systems with inductive loads.

Availability

IRF6215LPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter high-side switches, and uninterruptible power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRF6215LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-voltage, high-current MOSFETs engineered for ruggedness in motor control, UPS, and industrial power conversion applications.

FAQ

What is the maximum continuous drain current for IRF6215LPBF at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is 8.5 A, derated from 12 A at 25°C per the SOA curve. This limit ensures safe operation within the device's thermal resistance (R_θJC = 1.5°C/W) and prevents junction temperature exceedance under sustained load.

Does IRF6215LPBF require a gate resistor for ESD protection?

No dedicated gate resistor is required for ESD protection, as the device incorporates internal gate protection diodes. However, a 10–47 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast switching, especially with high-speed drivers.

Can IRF6215LPBF be used in parallel configurations?

Yes, it supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Designers must match gate drive loop inductance and ensure symmetrical PCB layout; thermal coupling between devices should be minimized to avoid localized hot spots.

Is the metal tab electrically connected to the drain terminal?

Yes, the exposed metal tab is internally bonded to the drain terminal and must be treated as a live high-voltage node. When mounted to a heatsink, electrical isolation using mica or polymer insulators is mandatory unless the heatsink is fully floating or referenced to drain potential.

IRF6215LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF6215LPBF FAQ

1.How can I place an order for IRF6215LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6215LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6215LPBF reliable?

The price and inventory of IRF6215LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6215LPBF is usually 5 days.

3.What payment methods are accepted for IRF6215LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6215LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6215LPBF?

IRF6215LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6215LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6215LPBF?

For technical support, including IRF6215LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6215LPBF requirements.

6.How does Aetrix verify that IRF6215LPBF is sourced from the original manufacturer or authorized distributors?

All IRF6215LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6215LPBF meets industry standards.

7.What is the process for return or replacement of IRF6215LPBF?

All IRF6215LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6215LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6215LPBF part is unused and in its original packaging.

Return procedure for IRF6215LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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