Infineon Technologies IRFR3806PBF

Overview

IRFR3806PBF from Infineon Technologies is a 60 V, 43 A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, featuring 12.6 mΩ typical R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability. It is engineered for high-efficiency synchronous rectification in SMPS and hard-switched DC-DC converters operating up to 1 MHz.

For engineers reviewing the IRFR3806PBF datasheet, IRFR3806PBF pinout, IRFR3806PBF application, or IRFR3806PBF equivalent, key selection criteria include its avalanche-rated ruggedness (E_AS = 300 mJ), low C_{oss eff.(TR)} = 230 pF for fast switching, and validated performance at T_J = 175 °C in high-reliability industrial power stages.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted edge termination to achieve thermally limited single-pulse avalanche energy of 300 mJ and robust dv/dt immunity up to 0.47 V/ns. Its body diode exhibits t_rr = 22–33 ns and Q_rr = 17–26 nC under 100 A/µs di/dt stress, enabling reliable operation in synchronous buck and LLC resonant topologies.

The device's dynamic parameters-including C_iss = 1150 pF, C_oss = 130 pF, and Crss = 67 pF-are fully characterized at 1 MHz and V_DS = 0–60 V, supporting accurate loss modeling in high-frequency (>500 kHz) switching applications where Miller-effect control and zero-voltage switching margin are critical.

Key Specifications

Pinout & Package

IRFR3806PBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads compatible with standard reflow profiles and supports PCB copper area heatsinking via the drain tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL100N6F7 and IXTP30N60P, IRFR3806PBF offers optimal balance of low gate charge, moderate current handling, and D-Pak thermal performance-making it preferred for space-constrained, medium-power (<50 W per switch) synchronous rectification where driver simplicity and PCB area are critical.

Availability

IRFR3806PBF is available at Aetrix Electronics and suitable for high-frequency SMPS, uninterruptible power supplies, and hard-switched DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFR3806PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This device belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in server, telecom, and industrial UPS applications demanding rugged avalanche performance and fast switching.

FAQ

Is IRFR3806PBF suitable for logic-level gate drive?

No-IRFR3806PBF is specified for 10 V gate drive and has V_GS(th) = 2.0–4.0 V, but its R_DS(on) is not guaranteed below 4.5 V. At 5 V drive, R_DS(on) degrades to ~25 mΩ, increasing conduction loss by >90 %. It requires a dedicated 10 V gate driver, not 3.3 V or 5 V logic outputs.

What is the maximum recommended PCB copper area for thermal relief?

For optimal thermal performance, the drain pad should connect to ≥250 mm² of 2 oz copper on the top layer, with ≥4 thermal vias (0.3 mm diameter, filled) to an internal ground plane. This achieves R_θJA ≈ 35 °C/W in still air, enabling 22 W continuous dissipation without heatsink.

Does IRFR3806PBF have a built-in ESD protection diode?

No-IRFR3806PBF lacks integrated gate protection. Its gate oxide is rated for ±20 V V_GS, and exposure to >10 V transient spikes risks permanent damage. External 12 V Zener clamps between gate and source are required in all layouts, especially in high-noise industrial environments.

Can IRFR3806PBF replace IRFR3710ZPBF in existing designs?

Only with circuit review-IRFR3710ZPBF is a 100 V, 57 A device with 10.5 mΩ R_DS(on) and different dynamic characteristics (Q_g = 35 nC, C_oss = 220 pF). Substituting IRFR3806PBF lowers voltage rating to 60 V and increases switching loss due to higher C_oss; it is unsafe in 48 V systems with >20 % transients unless revised for overvoltage margin.