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Infineon Technologies IRF5210LPBF
- Part No.:
- IRF5210LPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF5210LPBF.pdf
- Description:
- MOSFET P-CH 100V 38A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:7,512
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Product details
Overview
IRF5210LPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in D2PAK (TO-262) package, rated for -100 V V(BR)DSS, 60 mΩ RDS(on) at VGS = -10 V, and -38 A continuous drain current at TC = 25°C. It features 150°C maximum junction temperature, fast switching (tr = 63 ns, tf = 55 ns), and rated repetitive avalanche energy (EAR = 120 mJ), making it suitable for high-reliability DC-DC synchronous rectification and motor control H-bridge legs.
For engineers reviewing the IRF5210LPBF datasheet, IRF5210LPBF pinout, IRF5210LPBF application, or IRF5210LPBF equivalent, key selection criteria include its low RDS(on) at elevated temperature, body diode reverse recovery charge (Qrr = 1180–1770 nC), avalanche ruggedness, and thermal resistance (RθJC = 0.75 °C/W), critical for high-current, high-temperature power stage design.
Technical Context
This device operates as a high-side or low-side switch in DC-DC converters and motor drivers, leveraging its negative gate threshold (-2.0 to -4.0 V) and robust gate drive compatibility with standard logic-level controllers. Its internal source/drain inductance (LS = 7.5 nH, LD = 4.5 nH) and low Crss (430 pF) support stable high-speed switching under hard commutation.
The integrated body diode exhibits VSD = -1.6 V at IS = -23 A and trr = 170–260 ns, enabling efficient freewheeling in inductive loads without external diodes. Repetitive avalanche capability up to Tjmax ensures survivability during transient overvoltage events in unclamped inductive switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -100 V - Withstands 100 V drain-source blocking voltage before avalanche onset |
| RDS(on) | 60 mΩ max @ VGS = -10 V, TJ = 25°C - Enables <1.5 W conduction loss at 38 A |
| ID (TC = 25°C) | -38 A - Continuous drain current rating with heatsink at 25°C case temperature |
| EAS | 170 mJ - Single-pulse avalanche energy handling capacity at TJ = 25°C |
| Qg | 150–230 nC - Total gate charge determines required driver peak current and switching loss |
| RθJC | 0.75 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power dissipation |
| tr / tf | 63 ns / 55 ns - Rise/fall times define minimum achievable switching period and EMI profile |
| Qrr | 1180–1770 nC - Reverse recovery charge impacts turn-on loss and diode stress in synchronous rectifiers |
Pinout & Package
D2PAK (TO-262) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline, lead-free (PbF) compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat |
| Source | Reference node for gate drive and current return | Common node for body diode cathode and source terminal; defines VGS reference point |
| Gate | Control input for channel conduction | High-impedance MOS control terminal requiring ~150 nC charge for full enhancement |
Key Features
| Feature | Design Value |
|---|---|
| 150°C maximum junction temperature | Enables operation in sealed enclosures or high-ambient environments without derating |
| Repetitive avalanche rated | Supports reliable operation under unclamped inductive switching without external snubbers |
| Ultra-low RDS(on) at high temperature | RDS(on) remains ≤2× room-temp value up to 150°C, preserving efficiency in thermal stress |
| Fast body diode recovery | trr = 170–260 ns reduces cross-conduction loss and EMI in synchronous rectifier topologies |
| Low gate charge (Qg) | 150–230 nC allows use with medium-strength gate drivers (e.g., IR2110, UCC27531) |
Applications
| Industrial Motor Drives | DC-DC Synchronous Rectifiers |
|---|---|
Use Scenario: Half-bridge or H-bridge inverter stages for 24–48 V BLDC motor control in factory automation systems. IC Role / Device Role / Timing Role: Low-side P-channel switch providing bidirectional current control and regenerative braking via body diode conduction. Use Value: 60 mΩ RDS(on) minimizes I²R losses at 30 A peak, while 150°C rating sustains performance during extended duty cycles. | Use Scenario: Secondary-side synchronous rectification in isolated 12 V/24 V telecom DC-DC modules. IC Role / Device Role / Timing Role: High-efficiency replacement for Schottky diodes, turned on during positive VDS half-cycle using gate timing referenced to source. Use Value: Qrr of 1180–1770 nC enables clean zero-voltage switching transitions, reducing turn-on loss by >40% vs. discrete diodes. |
| Uninterruptible Power Supplies | Automotive Body Control Modules |
Use Scenario: Battery backup switching and inverter output stage in 48 V UPS systems with active cooling. IC Role / Device Role / Timing Role: High-current P-channel switch managing battery isolation and AC/DC inversion paths. Use Value: Repetitive avalanche rating (EAR = 120 mJ) prevents failure during load dump transients and short-circuit recovery. | Use Scenario: High-side load switch for 12 V lighting and solenoid control in vehicle door modules. IC Role / Device Role / Timing Role: Load disconnect switch with integrated body diode for inductive kickback suppression. Use Value: VSD = -1.6 V at -23 A ensures low forward drop during PWM dimming, reducing thermal stress on PCB traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | RDS(on) = 200 mΩ @ VGS = -10 V; lower ID (−23 A); no specified repetitive avalanche rating | Lower current density limits use to <15 A continuous; unsuitable for high-reliability avalanche-prone circuits | Choose only where cost sensitivity outweighs efficiency and ruggedness requirements |
| STP12PF06 | V(BR)DSS = -60 V; RDS(on) = 120 mΩ; TJmax = 175°C; higher Qg (220 nC) | Not interchangeable in -100 V systems; better thermal margin but higher switching loss | Select when 175°C operation is mandatory and voltage rating can be reduced |
Compared with IRF9540NPBF and STP12PF06, the IRF5210LPBF uniquely balances -100 V rating, 60 mΩ conduction, and documented repetitive avalanche capability-making it optimal for industrial motor drives and telecom DC-DC where both voltage headroom and ruggedness are non-negotiable.
Availability
IRF5210LPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC synchronous rectifiers, uninterruptible power supplies, and automotive body control modules requiring stable component supply and long-term production continuity.
Supply support for IRF5210LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF5210LPBF belongs to Infineon's legacy HEXFET® P-channel power MOSFET product line, engineered for high-current, high-ruggedness switching in demanding power conversion and motor control applications.
FAQ
Is IRF5210LPBF pin-compatible with IRF5210SPbF?
Yes - both share identical D2PAK (TO-262) footprint and pinout (Drain-Source-Gate). The LPbF variant uses lead-free terminations and is optimized for surface-mount reflow, while SPbF may differ in plating and moisture sensitivity level; mechanical mounting and PCB layout are fully interchangeable.
What gate drive voltage is required for full enhancement?
A minimum VGS of -10 V is required to achieve the specified RDS(on) ≤ 60 mΩ. Gate threshold voltage ranges from -2.0 V to -4.0 V, so logic-level drivers (e.g., -5 V output) will partially enhance the device but yield significantly higher on-resistance and conduction loss.
Can IRF5210LPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (normalized resistance increases with temperature) provides inherent current sharing stability. For reliable paralleling, match gate drive loop inductance and ensure symmetrical PCB layout and thermal coupling across all devices.
Does the body diode support continuous conduction mode (CCM) operation?
Yes - the intrinsic body diode is rated for -38 A continuous source current (IS) and -140 A pulsed (ISM), with VSD = -1.6 V at -23 A. Its trr = 170–260 ns and Qrr = 1180–1770 nC make it suitable for CCM in synchronous buck and flyback topologies up to ~200 kHz.
IRF5210LPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2780 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 170W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF5210LPBF FAQ
1.How can I place an order for IRF5210LPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5210LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5210LPBF reliable?
The price and inventory of IRF5210LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5210LPBF is usually 5 days.
3.What payment methods are accepted for IRF5210LPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5210LPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5210LPBF?
IRF5210LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5210LPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5210LPBF?
For technical support, including IRF5210LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5210LPBF requirements.
6.How does Aetrix verify that IRF5210LPBF is sourced from the original manufacturer or authorized distributors?
All IRF5210LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5210LPBF meets industry standards.
7.What is the process for return or replacement of IRF5210LPBF?
All IRF5210LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5210LPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5210LPBF part is unused and in its original packaging.
Return procedure for IRF5210LPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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