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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR1018EPBF

Name: IRFR1018EPBF
Brand: Infineon Technologies
SKU: IRFR1018EPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1018EPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1018EPBF.pdf

Description:: MOSFET N-CH 60V 56A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR1018EPBF from Infineon Technologies is a 60 V, 7.1 mΩ (typ), D-Pak packaged N-channel enhancement-mode HEXFET® Power MOSFET optimized for high-frequency hard-switched and synchronous rectification applications. It delivers 56 A continuous drain current (package-limited), supports 47 A avalanche current, and features enhanced body diode dV/dt and dI/dt capability for robust operation in SMPS and UPS systems.

For engineers reviewing the IRFR1018EPBF datasheet, IRFR1018EPBF pinout, IRFR1018EPBF application, or IRFR1018EPBF equivalent, key selection criteria include R_DS(on) at 10 V, Q_g = 46 nC (typ), C_oss = 270 pF, t_r = 35 ns, and body diode t_rr = 26–39 ns - all critical for efficiency and EMI control in high-speed power conversion.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve low R_DS(on) while maintaining high dv/dt ruggedness (>50 V/ns) and fully characterized avalanche SOA. Its gate charge profile (Q_gd/Q_g = 12/46 nC) enables fast, controllable switching with reduced Miller-induced shoot-through risk.

The integrated body diode exhibits low V_SD = 1.3 V (max) and tightly specified reverse recovery (Q_rr = 24–36 nC, I_RRM = 1.8 A), making it suitable for synchronous rectification where diode conduction and recovery losses dominate system efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; sets upper limit for DC bus or flyback clamp voltage
R_DS(on) (typ)	7.1 mΩ @ V_GS = 10 V - Determines conduction loss at 47 A: ~15.7 W dissipation without heatsink
Q_g (typ)	46 nC - Gate drive energy requirement; defines minimum driver peak current for <100 ns turn-on
t_r / t_f	35 ns / 46 ns - Switching speed directly impacts overlap loss and EMI generation in 100–500 kHz converters
t_rr (max)	39 ns @ T_J = 125°C - Limits minimum dead time in synchronous rectifiers to prevent cross-conduction
E_AS	315 mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching in relay drivers or motor phase legs
R_θJC	1.32 °C/W - Junction-to-case thermal resistance; allows direct mounting to heatsink for >50 W continuous dissipation

Pinout & Package

D-Pak (TO-252AA) package: surface-mount, single-ended leadframe with exposed drain pad for thermal and electrical connection. Three terminals only: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Control electrode	Receives 10 V logic-level gate drive; threshold V_GS(th) = 2.0–4.0 V ensures compatibility with 3.3 V/5 V controllers
D	High-side power terminal	Connected to PCB copper pour for heat sinking; electrically tied to backside metal - must be isolated from other layers
S	Reference node / return path	Source connection forms common reference for gate drive and current sensing; low-inductance routing critical for dv/dt immunity

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	Rated E_AS = 315 mJ (single pulse); validated up to 47 A I_AR - eliminates need for external snubbers in inductive loads
Optimized body diode dI/dt capability	Supports di/dt ≤ 1668 A/μs - enables reliable operation in high-di/dt synchronous rectifier and freewheeling paths
Fully characterized C_oss and SOA	C_oss = 270 pF, C_oss,eff(TR) = 630 pF - enables accurate soft-switching timing and loss modeling in LLC resonant designs
Lead-free and RoHS-compliant	"PbF" suffix confirms exemption-compliant termination; qualified to consumer-level reliability standards per Infineon specification
Thermally enhanced D-Pak	R_θJC = 1.32 °C/W - enables >50 W continuous power handling with minimal heatsink area on FR-4 PCB

Applications

SMPS Synchronous Rectifier

Uninterruptible Power Supply (UPS)

Use Scenario: Secondary-side switch in 48 V output LLC resonant converter operating at 250 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutated by controller with adaptive dead-time control.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky; t_rr ≤ 39 ns avoids shoot-through at 250 kHz switching frequency.

Use Scenario: DC-DC boost stage in online double-conversion UPS delivering 3 kW at 96% efficiency.

IC Role / Device Role / Timing Role: High-current, high-reliability main switch in interleaved PFC front-end.

Use Value: 56 A package-limited current and 315 mJ E_AS withstand line surges and battery-backup transients without derating.

Hard-Switched Motor Drive

High-Frequency DC-DC Converter

Use Scenario: Half-bridge leg in 24 V BLDC inverter driving industrial pump at 20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current.

Use Value: Body diode V_SD = 1.3 V and Q_rr = 24 nC minimize freewheeling loss and reduce gate drive stress during commutation.

Use Scenario: Primary switch in 48 V input, 12 V output isolated flyback converter for telecom base station management.

IC Role / Device Role / Timing Role: Fast-turning primary-side switch requiring low Q_g and high dv/dt immunity.

Use Value: Q_g = 46 nC and dv/dt ruggedness >50 V/ns enable stable 1 MHz operation with minimal gate drive loss and no oscillation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 10 mΩ (typ), Q_g = 70 nC, TO-220 package	Higher conduction loss, slower switching, through-hole mounting	Prefer when board space allows TO-220 and thermal mass mitigates higher R_DS(on)
IXTP120N06S2	R_DS(on) = 5.2 mΩ (typ), Q_g = 52 nC, TO-220 package, higher ID = 120 A	Lower R_DS(on) but larger footprint and higher cost; not D-Pak compatible	Choose when lower conduction loss justifies larger package and added cost in high-volume production

Compared with STP60NF06 and IXTP120N06S2, IRFR1018EPBF offers optimal balance of D-Pak surface-mount compatibility, 7.1 mΩ R_DS(on), and 46 nC Q_g - making it preferred for space-constrained, high-frequency SMPS where thermal performance and layout simplicity are prioritized over absolute lowest R_DS(on).

Availability

IRFR1018EPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply (UPS) inverters, and hard-switched motor drives requiring stable component supply across extended production lifecycles.

Supply support for IRFR1018EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in server PSUs, telecom infrastructure, and industrial motor controls.

FAQ

Is IRFR1018EPBF suitable for 3.3 V logic-level gate drive?

No - its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and full enhancement requires ≥10 V gate drive to achieve rated R_DS(on) = 7.1 mΩ. At 3.3 V, R_DS(on) exceeds 50 mΩ, causing excessive conduction loss. A gate driver or level shifter is required for microcontroller-based 3.3 V systems.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies ID = 56 A at T_C = 25°C (package-limited), derating linearly at 0.76 W/°C. At T_C = 100°C, maximum continuous drain current is 11 A - calculated as 56 A × (1 − (100 − 25) × 0.76 / 56), consistent with the "Maximum Drain Current vs. Case Temperature" curve (Fig. 9).

Does IRFR1018EPBF have avalanche-rated operation?

Yes - it is fully characterized for unclamped inductive switching with E_AS = 315 mJ (single-pulse, T_J = 25°C) and I_AR = 47 A. Repetitive avalanche is permitted if junction temperature remains below 175°C, per Fig. 12 and AN-1005 guidelines on transient thermal impedance.

Can the body diode be used for reverse recovery in synchronous rectification?

Yes - the body diode is fully specified with t_rr = 26–39 ns, Q_rr = 24–36 nC, and I_RRM = 1.8 A. Its fast, soft recovery behavior and dI/dt capability up to 1668 A/μs make it suitable for synchronous rectification in 100–500 kHz converters when paired with appropriate dead-time control.

IRFR1018EPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 47A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2290 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR1018EPBF FAQ

1.How can I place an order for IRFR1018EPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1018EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1018EPBF reliable?

The price and inventory of IRFR1018EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1018EPBF is usually 5 days.

3.What payment methods are accepted for IRFR1018EPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1018EPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1018EPBF?

IRFR1018EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1018EPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1018EPBF?

For technical support, including IRFR1018EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1018EPBF requirements.

6.How does Aetrix verify that IRFR1018EPBF is sourced from the original manufacturer or authorized distributors?

All IRFR1018EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1018EPBF meets industry standards.

7.What is the process for return or replacement of IRFR1018EPBF?

All IRFR1018EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1018EPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1018EPBF part is unused and in its original packaging.

Return procedure for IRFR1018EPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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