Infineon Technologies 64-6006PBF

Overview

64-6006PBF from Vishay Siliconix (formerly International Rectifier) is a 300 V, 93 A N-channel enhancement-mode HEXFET® Power MOSFET in TO-247AC package, optimized for plasma display panel (PDP) sustain and energy recovery circuits. It features 49 mΩ R_DS(on) @ 10 V, 165 nC total gate charge, 175°C max junction temperature, and robust repetitive avalanche capability up to 360 V.

For engineers reviewing the 64-6006PBF datasheet, 64-6006PBF pinout, 64-6006PBF application, or 64-6006PBF equivalent, key selection criteria include low EPULSE rating for PDP sustain efficiency, fast switching (t_r = 71 ns, t_f = 48 ns), high repetitive peak current (300 A), thermal ruggedness (R_θJC = 0.35 °C/W), and body diode Q_rr = 2330–3500 nC for controlled recovery in resonant topologies.

Technical Context

This MOSFET employs advanced planar silicon process technology with optimized charge balance for high-voltage switching in hard-switched and resonant PDP sustain stages. Its low Q_gd/Q_g ratio (61/165 nC) supports clean turn-off in high-dV/dt environments, while the integrated body diode exhibits controlled reverse recovery (t_rr = 300–450 ns, Q_rr = 2330–3500 nC) under 100 A/µs di/dt.

The device is rated for unclamped inductive switching (UIS) with E_AS = 1960 mJ at T_J = 25°C and E_AR = 3740 mJ at T_J = 100°C, enabling reliable operation in energy recovery loops where voltage overshoot and avalanche stress are routine. Thermal design is supported by low junction-to-case resistance (0.35 °C/W) and 175°C continuous operation.

Key Specifications

Pinout & Package

64-6006PBF uses the industry-standard TO-247AC package: isolated metal tab (drain), three leads (gate, drain, source), with drain electrically connected to the mounting surface. The package provides low thermal resistance (R_θJC = 0.35 °C/W) and mechanical robustness for high-power PDP modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW30NM60FD and IXFH30N60P, 64-6006PBF delivers 3× higher continuous current (93 A vs. 30 A), 3.7× lower R_DS(on) (49 mΩ vs. 180 mΩ), and verified repetitive avalanche endurance-making it uniquely suitable for full-size PDP sustain stages demanding both power density and fault resilience.

Availability

64-6006PBF is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, industrial plasma ignition systems, high-frequency resonant converters, and energy recovery modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for 64-6006PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix, acquired from International Rectifier in 2015, specializes in high-performance discrete semiconductors including power MOSFETs, IGBTs, and diodes for industrial, automotive, and computing markets.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-efficiency switching in plasma display sustain and energy recovery applications where thermal ruggedness, avalanche robustness, and fast dynamic response are mandatory.

FAQ

What is the maximum safe operating area (SOA) for 64-6006PBF at 100°C case temperature?

At T_C = 100°C, the SOA curve (Fig. 12) limits continuous operation to 12 A at 300 V, 48 A at 100 V, and 93 A at 25 V. Pulse operation (≤100 µs) extends this to 93 A at 240 V. Derating follows linear thermal resistance (2.9 W/°C above 25°C ambient), and second breakdown is avoided by staying within the R_DS(on)-limited region below 100 µs.

Does 64-6006PBF require a negative gate voltage for reliable turn-off in high-dv/dt environments?

No. The device has a gate threshold voltage (V_GS(th)) of 3.0–5.0 V and is fully enhanced at +10 V. While a small negative bias (−5 V) improves noise immunity, the low Q_gd/Q_g ratio (37%) and robust dV/dt immunity (100 V/ns typical) allow reliable turn-off with 0 V gate drive in properly laid-out PDP sustain circuits.

How does the body diode performance compare to discrete Schottky diodes in PDP energy recovery?

The integrated body diode has V_SD = 1.0 V and Q_rr = 2330–3500 nC at 33 A, which is higher than ultrafast Schottkys but enables monolithic integration and matched thermal tracking. In practice, its controlled recovery reduces ringing versus fast Schottkys while maintaining acceptable forward loss-ideal for resonant recovery where diode timing must match MOSFET switching.

Can 64-6006PBF be used in surface-mount designs?

No. The TO-247AC package is explicitly not recommended for surface-mount applications per IR documentation. It requires through-hole mounting with mechanical screw torque (10 lb·in / 1.1 N·m) to ensure thermal contact and mechanical stability under thermal cycling in high-power PDP modules.