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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS3207PBF

Name: IRFS3207PBF
Brand: Infineon Technologies
SKU: IRFS3207PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS3207PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS3207PBF.pdf

Description:: MOSFET N-CH 75V 170A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS3207PBF from Infineon Technologies is a 75 V, 170 A (T_C = 25°C), N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package with R_DS(on) typ. 3.6 mΩ and Q_g 180 nC, designed for high-efficiency synchronous rectification in SMPS and hard-switched DC-DC converters operating up to 500 kHz.

For engineers reviewing the IRFS3207PBF datasheet, IRFS3207PBF pinout, IRFS3207PBF application, or IRFS3207PBF equivalent, key selection criteria include avalanche ruggedness (E_AS = 300 mJ), body diode dV/dt capability (≥2.0 V/ns), reverse recovery charge (Q_rr = 65–98 nC), and thermal resistance R_θJC = 0.50 °C/W - all critical for high-reliability power stage design in UPS and telecom rectifiers.

Technical Context

This MOSFET employs planar stripe cell structure and optimized gate oxide to deliver enhanced dynamic dV/dt ruggedness and fully characterized avalanche SOA. Its low C_{oss eff.(TR)} (1010 pF) and C_rss (390 pF) support fast switching with reduced Miller-induced turn-off delay (t_d(off) = 68 ns) and controlled voltage overshoot in clamped inductive switching.

The integrated body diode features low V_SD (≤1.3 V), fast t_rr (42–63 ns), and high dI/dt immunity (up to 500 A/µs), enabling robust synchronous rectification without external Schottky assistance in 48 V input server PSUs and telecom power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; supports 48 V bus designs with 50% safety margin against transients.
R_DS(on) typ.	3.6 mΩ at V_GS = 10 V, T_J = 25°C - Enables ≤1.2 W conduction loss at 170 A, critical for thermally constrained TO-220 layouts.
Q_g	180 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers at 300–500 kHz switching.
E_AS	300 mJ single-pulse - Specifies maximum unclamped inductive energy absorption without failure; validated per JEDEC JESD24-11.
t_rr	42 ns (T_J = 25°C) - Defines minimum dead-time needed to prevent shoot-through in synchronous buck stages.
R_θJC	0.50 °C/W - Enables direct heatsink mounting with predictable junction temperature rise; supports 170 A continuous operation only with active cooling.

Pinout & Package

TO-220AB package: 3-pin through-hole, isolated tab (drain-connected), 1.1 N·m mounting torque, lead-free plating. Thermal pad electrically tied to drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating washer if heatsink is grounded; dominates thermal path to ambient.
Source	Power return node / reference for gate drive	Low-inductance connection point for source loop; critical for minimizing dV/dt coupling into gate during switching.
Gate	Control terminal for channel modulation	High-impedance input requiring <200 nA leakage handling; sensitive to ESD; must be driven with <2.6 Ω series resistance to damp oscillation.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	Rated for 300 mJ single-pulse E_AS with full characterization across temperature - eliminates need for external snubbers in UPS hold-up circuits.
Optimized body diode dV/dt immunity	Guaranteed ≥2.0 V/ns diode recovery dV/dt - prevents false turn-on during high-speed commutation in phase-shifted full-bridge topologies.
Low C_{oss eff.(ER)}	920 pF - reduces stored energy loss during hard-switching transitions, directly lowering switching loss in 200–500 kHz SMPS.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020D reflow profile - supports automated assembly without lead contamination risk in industrial power supplies.

Applications

Server PSU Synchronous Rectifier

Telecom 48 V DC-DC Converter

Use Scenario: High-density 1 kW half-bridge LLC resonant converter with synchronous rectification on secondary side.

IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier MOSFET.

Use Value: 3.6 mΩ R_DS(on) cuts conduction loss by 40% vs. legacy 6 mΩ devices; 42 ns t_rr enables 20 ns dead-time reduction, improving efficiency by 0.8% at full load.

Use Scenario: Isolated 48 V input, 12 V output forward converter for base station power distribution.

IC Role / Device Role / Timing Role: Primary-side main switch operating at 250 kHz with unclamped inductive switching stress.

Use Value: 300 mJ E_AS rating ensures reliable operation under output short-circuit fault without desaturation protection circuitry.

Uninterruptible Power Supply (UPS)

Industrial Motor Drive Inverter Stage

Use Scenario: Online double-conversion UPS with bidirectional IGBT/MOSFET hybrid inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge output stage handling battery-to-AC inversion.

Use Value: 170 A continuous current rating (T_C = 25°C) supports 3 kVA output with forced-air cooling; 500 A/µs dI/dt capability prevents diode latch-up during regeneration.

Use Scenario: 7.5 kW variable-frequency drive with 3-phase inverter feeding PMSM motor.

IC Role / Device Role / Timing Role: Phase-leg high-side switch subjected to repetitive avalanche during braking energy recirculation.

Use Value: Repetitive avalanche rating (EAR = 1000 mJ at T_J = 25°C) allows safe dissipation of regenerative energy without external clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 75 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP160N75F7	R_DS(on) = 3.2 mΩ (lower), Q_g = 150 nC (lower), but E_AS = 190 mJ (37% lower than IRFS3207PBF)	Better efficiency in continuous conduction mode; less suitable for unclamped inductive loads like UPS inverters	Select when gate drive power budget is tight and avalanche stress is minimal.
IXTH170N075L2	R_DS(on) = 3.8 mΩ (higher), Q_g = 220 nC (higher), but t_rr = 35 ns (faster) and Q_rr = 52 nC (20% lower)	Superior reverse recovery performance for ultra-high-frequency ZVS/ZCS topologies above 1 MHz	Select when minimizing reverse recovery loss dominates over conduction loss in resonant converters.

Compared with STP160N75F7 and IXTH170N075L2, IRFS3207PBF offers the highest E_AS rating among 75 V, 170 A MOSFETs - making it uniquely suited for applications where unclamped inductive energy absorption is non-negotiable, such as offline UPS and motor drive braking circuits.

Availability

IRFS3207PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply systems, and hard-switched DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFS3207PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness power conversion in telecom, server, and industrial UPS applications demanding robust avalanche performance and low gate charge.

FAQ

Is IRFS3207PBF suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount application per Infineon's datasheet note on page 8. It requires through-hole mounting with mechanical screw attachment (6-32 or M3) and thermal interface to a heatsink. Reflow soldering will compromise mechanical integrity and thermal performance.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies ID @ TC = 100°C as 120 A at V_GS = 10 V. This value is thermally limited by junction temperature (T_Jmax = 175°C) and package constraints - not silicon-limited - and assumes proper heatsinking with R_θJC = 0.50 °C/W and ambient conditions per JEDEC JESD51-2.

Does IRFS3207PBF have a built-in body diode, and what are its key ratings?

Yes. It integrates an intrinsic reverse p–n junction body diode rated for 170 A continuous source current (I_S) and 720 A pulsed (I_SM). Key diode parameters include V_SD ≤ 1.3 V, t_rr = 42–63 ns, Q_rr = 65–98 nC, and dI/dt capability up to 500 A/µs - all measured under standardized conditions per Figure 7 and Table 4.

Can IRFS3207PBF replace IRFB3207PbF in existing designs?

Yes, with identical electrical specifications and TO-220AB footprint, but IRFS3207PBF uses a different internal die revision optimized for improved dV/dt ruggedness and avalanche SOA. No layout or gate drive changes are required; however, system-level validation of hard-switching waveforms under worst-case load transients is recommended due to subtle differences in C_oss and Q_gd.

IRFS3207PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS3207PBF FAQ

1.How can I place an order for IRFS3207PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS3207PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS3207PBF reliable?

The price and inventory of IRFS3207PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3207PBF is usually 5 days.

3.What payment methods are accepted for IRFS3207PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3207PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS3207PBF?

IRFS3207PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS3207PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS3207PBF?

For technical support, including IRFS3207PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3207PBF requirements.

6.How does Aetrix verify that IRFS3207PBF is sourced from the original manufacturer or authorized distributors?

All IRFS3207PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3207PBF meets industry standards.

7.What is the process for return or replacement of IRFS3207PBF?

All IRFS3207PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3207PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS3207PBF part is unused and in its original packaging.

Return procedure for IRFS3207PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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