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Infineon Technologies IRFU3806PBF
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- Part No.:
- IRFU3806PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU3806PBF.pdf
- Description:
- MOSFET N-CH 60V 43A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,752
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Product details
Overview
IRFU3806PBF from Infineon Technologies is a 60 V, 43 A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency hard-switched and synchronous rectification applications. It features 12.6 mΩ typical RDS(on), 22 nC total gate charge, and enhanced body diode dV/dt (0.47 V/ns) and dI/dt (1580 A/µs) capability, enabling robust operation in SMPS and UPS systems.
For engineers reviewing the IRFU3806PBF datasheet, IRFU3806PBF pinout, IRFU3806PBF application, or IRFU3806PBF equivalent, key selection criteria include avalanche energy rating (300 mJ), SOA-limited pulsed current (170 A), thermal resistance (RθJC = 2.12 °C/W), and body diode reverse recovery performance (Qrr = 17–26 nC).
Technical Context
This MOSFET employs planar silicon process technology with optimized cell layout to deliver low conduction loss and fast switching dynamics. Its fully characterized avalanche SOA and thermally limited EAS of 300 mJ support unclamped inductive switching in DC-DC converters and motor drives without external snubbers.
The device integrates an intrinsic body diode with 1.3 V forward voltage (VSD) at 25 A and 22–33 ns reverse recovery time (trr). Gate drive requirements are defined by 22 nC total charge and 0.79 Ω internal gate resistance, supporting efficient 10 V gate drive in high-efficiency synchronous rectifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum drain-source blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems. |
| RDS(on) typ. | 12.6 mΩ @ VGS = 10 V, TJ = 25°C - Directly determines conduction loss (Pcond ≈ ID² × RDS(on)) in continuous-current stages. |
| ID cont. | 43 A @ TC = 25°C - Continuous safe operating current with heatsink; derates to 31 A at 100°C case temperature. |
| Qg | 22 nC max - Total gate charge required to fully switch; defines driver power demand and switching speed trade-off. |
| EAS | 300 mJ single-pulse - Avalanche energy handling capacity under unclamped inductive load; enables ruggedness in flyback and LLC resonant converters. |
| trr | 22–33 ns - Body diode reverse recovery time; critical for minimizing shoot-through and EMI in synchronous rectification. |
| RθJC | 2.12 °C/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation when mounted on heatsink. |
Pinout & Package
IRFU3806PBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard G-D-S configuration (Gate-Drain-Source) with pin 1 = Gate, pin 2 = Drain, pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives 10 V logic-level gate drive; requires <22 nC charge to transition between full-on and full-off states. |
| Pin 2 (Drain) | High-side power terminal | Connected to positive rail or inductive load; electrically tied to exposed copper pad for low-inductance, low-thermal-resistance path. |
| Pin 3 (Source) | Reference and return path | Serves as signal ground reference for gate drive; carries full load current (up to 43 A) and must be routed with low impedance. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced avalanche ruggedness | 300 mJ single-pulse EAS with thermally limited SOA - eliminates need for external clamping in many flyback and half-bridge topologies. |
| Optimized body diode dV/dt immunity | 0.47 V/ns rated dv/dt - prevents spurious turn-on during high-slew-rate commutation in hard-switched converters. |
| Low Crss / Ciss ratio | Crss = 67 pF, Ciss = 1150 pF → Crss/Ciss ≈ 5.8% - reduces Miller effect, improving gate drive efficiency and noise immunity. |
| Characterized dynamic SOA | SOA curves validated up to 100 µs pulse width - enables reliable design margining for transient overloads in UPS and PFC stages. |
| Thermally enhanced D-Pak | RθJC = 2.12 °C/W with greased interface - supports >40 W continuous dissipation with modest heatsinking in industrial power supplies. |
Applications
| Server VRM Synchronous Rectifier | Industrial UPS Inverter Stage |
|---|---|
Use Scenario: High-current, high-efficiency 12 V input → 1 V output conversion in CPU/GPU voltage regulator modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with zero-voltage switching (ZVS) assist. Use Value: 12.6 mΩ RDS(on) minimizes conduction loss at 40+ A load; fast trr (22 ns) reduces body diode conduction time and associated losses. |
Use Scenario: Bidirectional DC link switching in online double-conversion uninterruptible power supplies. IC Role / Device Role / Timing Role: Hard-switched 60 V bridge leg switch handling 30 A RMS output current with 100 µs fault pulses. Use Value: 300 mJ EAS and 170 A pulsed current rating enable reliable operation during battery switchover transients without desaturation protection. |
| 48 V Telecom DC-DC Converter | Automotive DC Fast Charger Auxiliary Supply |
Use Scenario: Primary-side switch in isolated 48 V → 12 V telecom brick converters operating at 200–500 kHz. IC Role / Device Role / Timing Role: High-frequency PWM switch with tight gate charge control (Qg = 22 nC) and low Crss for ZVS compatibility. Use Value: 22 nC Qg and 0.79 Ω RG(int) allow clean, low-loss switching with standard 1 A gate drivers; Coss eff. (TR) = 230 pF supports soft-switching design. |
Use Scenario: Auxiliary 48 V → 12 V supply powering control electronics in EV DC fast charging stations. IC Role / Device Role / Timing Role: Input-stage buck switch handling wide-input (36–75 V) operation with high ambient temperature (TA ≤ 85°C). Use Value: RDS(on) drift <2.5× from 25°C to 125°C ensures stable efficiency across temperature; TJ(max) = 175°C supports compact thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP36NF06L | 60 V, 36 A, RDS(on) = 18 mΩ, Qg = 32 nC, TO-220 package | Higher RDS(on) and gate charge; through-hole mounting only | Preferred where board space allows TO-220 and lower cost outweighs efficiency loss. |
| IXTP30N06T | 60 V, 30 A, RDS(on) = 15 mΩ, Qg = 25 nC, TO-220 package | Lower current rating, higher thermal resistance (RθJC = 2.5 °C/W), no avalanche rating published | Acceptable for lower-power (<200 W), non-avalanche-critical designs with conservative derating. |
Compared with STP36NF06L and IXTP30N06T, IRFU3806PBF delivers superior current density (43 A in D-Pak vs. ≤36 A in TO-220), lower gate drive energy, and documented 300 mJ avalanche capability-making it uniquely suited for compact, high-reliability 48 V power stages.
Availability
IRFU3806PBF is available at Aetrix Electronics and suitable for high-frequency SMPS, uninterruptible power supplies, and hard-switched motor control circuits requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFU3806PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
IRFU3806PBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in server, telecom, and industrial power supplies where ruggedness and thermal performance are critical.
FAQ
Is IRFU3806PBF suitable for 48 V automotive auxiliary power supplies?
Yes. With 60 V VDSS, 175°C maximum junction temperature, and validated avalanche performance, IRFU3806PBF meets ISO 7637-2 load-dump surge requirements when properly heatsinked. Its 12.6 mΩ RDS(on) ensures high efficiency at 48 V input, and the D-Pak package supports automated assembly in automotive-grade PCBs.
What is the recommended gate resistor for hard-switched 200 kHz operation?
A 10 Ω series gate resistor is recommended for 200 kHz hard-switched operation. This value balances switching speed (minimizing overlap loss) and ringing suppression, given the device's 22 nC Qg and 0.79 Ω internal RG. Lower values (5–7 Ω) may be used with active gate drivers capable of ≥2 A peak sink/source current.
Does IRFU3806PBF have a specified body diode reverse recovery Qrr?
Yes. Qrr is specified as 17–26 nC depending on temperature (25°C to 125°C), measured at VR = 51 V, IF = 25 A, and di/dt = 100 A/µs. This value is critical for estimating body diode conduction loss and EMI in synchronous rectifier designs.
Can IRFU3806PBF replace IRFR3806PbF in existing designs?
Yes, with identical pinout and electrical specifications. Both share the same D-Pak package, 60 V rating, 43 A current, and 12.6 mΩ RDS(on). IRFU3806PBF is the standard lead-free version; IRFR3806PbF is obsolete and no longer manufactured. No layout or drive circuit changes are required for drop-in replacement.
IRFU3806PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1150 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 71W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK (TO-251AA)
IRFU3806PBF FAQ
1.How can I place an order for IRFU3806PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU3806PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU3806PBF reliable?
The price and inventory of IRFU3806PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3806PBF is usually 5 days.
3.What payment methods are accepted for IRFU3806PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3806PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU3806PBF?
IRFU3806PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU3806PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU3806PBF?
For technical support, including IRFU3806PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3806PBF requirements.
6.How does Aetrix verify that IRFU3806PBF is sourced from the original manufacturer or authorized distributors?
All IRFU3806PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3806PBF meets industry standards.
7.What is the process for return or replacement of IRFU3806PBF?
All IRFU3806PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3806PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU3806PBF part is unused and in its original packaging.
Return procedure for IRFU3806PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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