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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL4227PBF

Name: IRFSL4227PBF
Brand: Infineon Technologies
SKU: IRFSL4227PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL4227PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL4227PBF.pdf

Description:: MOSFET N-CH 200V 62A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:9,142

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Product details

Overview

IRFSL4227PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 130 A, 22 mΩ N-channel D2Pak (TO-262) HEXFET® Power MOSFET optimized for plasma display panel (PDP) sustain, energy recovery, and pass-switch applications. It features low EPULSE rating (≤1000 µJ at 100°C), 70 nC total gate charge, and 175°C maximum junction temperature.

For engineers reviewing the IRFSL4227PBF datasheet, IRFSL4227PBF pinout, IRFSL4227PBF application, or IRFSL4227PBF equivalent, key selection criteria include repetitive avalanche capability (240 V), fast switching (tr = 20 ns, tf = 31 ns), low RDS(on) temperature coefficient, and robust thermal performance (RθJC = 0.45°C/W).

Technical Context

This MOSFET employs advanced silicon process technology to achieve high current density and low conduction loss while maintaining rugged unclamped inductive switching (UIS) performance. Its body diode exhibits 1.3 V forward voltage at 46 A and 100–150 ns reverse recovery time with 430–640 nC Qrr.

The device is characterized for operation up to 175°C junction temperature and supports linear derating of power dissipation above 25°C case temperature. Repetitive avalanche energy (EAR) and single-pulse avalanche energy (EAS = 62 mJ) are specified under controlled test conditions with L = 220 nH and C = 0.4 µF.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	200 V - Maximum blocking voltage before breakdown; suitable for 160 V bus PDP sustain circuits.
R_DS(on) typ. @ 10 V	22 mΩ - Low on-resistance enables <1.1 W conduction loss at 130 A, reducing heatsink requirements.
I_RP @ T_C = 100°C	130 A - Continuous drain current rating at elevated case temperature, critical for high-duty-cycle PDP drivers.
Q_g total	70 nC - Enables fast turn-on with moderate gate drive strength; reduces switching losses in high-frequency sustain stages.
E_PULSE max	1000 µJ @ 100°C - Low pulse energy rating minimizes localized heating during short-circuit or overload events.
t_r/t_f	20 ns / 31 ns - Fast edge rates support >500 kHz switching in resonant energy recovery topologies.
T_J max	175°C - Extended junction temperature rating improves reliability under transient thermal stress in sealed PDP enclosures.

Pinout & Package

IRFSL4227PBF is housed in a TO-262 (D2Pak) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The package features isolated drain tab for direct heatsinking and meets JEDEC MO-211 standards.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level drive; threshold voltage 3.0–5.0 V ensures compatibility with standard gate drivers.
D	High-side power terminal	Connected to drain metallization and exposed copper tab; carries full load current and requires thermal interface to heatsink.
S	Source return path	Common reference for gate drive and current sensing; internal source inductance (7.5 nH) affects high-di/dt ringing.

Key Features

Feature	Design Value
Optimized for PDP sustain	Low EPULSE and high I_RP enable reliable operation in high-repetition-rate plasma cell addressing.
Repetitive avalanche capability	Rated for 240 V avalanche voltage with defined E_AR, supporting robustness against inductive kickback in pass-switch mode.
Low Q_g/Q_gd ratio	Q_gd = 23 nC (33% of Q_g) minimizes Miller effect, improving noise immunity and dv/dt ruggedness.
Enhanced thermal resistance	R_θJC = 0.45°C/W allows 130 W dissipation at ΔT = 58.5°C, enabling compact thermal design in space-constrained PDP modules.

Applications

Plasma Display Panel Sustain Circuit

PDP Energy Recovery Switch

Use Scenario: Driving row electrodes in AC plasma displays during sustain phase with 200 kHz–500 kHz square-wave excitation.

IC Role / Device Role / Timing Role: High-current, bidirectional switch handling peak currents up to 130 A per half-cycle.

Use Value: Low R_DS(on) and fast switching minimize conduction and switching losses, extending panel lifetime and reducing thermal management complexity.

Use Scenario: Recovering stored inductive energy from sustain transformers and recycling it back to the DC bus.

IC Role / Device Role / Timing Role: Unidirectional high-efficiency pass switch operating in hard-switched resonant mode.

Use Value: Low EPULSE rating and high repetitive avalanche endurance prevent failure during frequent energy dump transients.

PDP Pass-Switch Driver

Industrial DC Bus Protection Switch

Use Scenario: Isolating sustain circuitry from main power rail during initialization or fault conditions.

IC Role / Device Role / Timing Role: High-reliability, high-current solid-state relay replacing mechanical contactors.

Use Value: 175°C junction rating and 130 A continuous current support fail-safe operation in sealed, high-ambient-temperature enclosures.

Use Scenario: Protecting 200 V DC industrial power supplies from short-circuit faults using active crowbar switching.

IC Role / Device Role / Timing Role: Fast-acting overcurrent protection element triggered by external fault detection.

Use Value: 240 V avalanche voltage margin and 62 mJ single-pulse energy rating allow safe clamping without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF20	200 V, 90 A, 24 mΩ, TO-247 package; higher R_θJA, no EPULSE spec	Limited to lower-current PDP designs; lacks documented avalanche energy rating	Prefer when board layout favors through-hole mounting and thermal mass compensates for higher R_DS(on).
IXFH32N20X3	200 V, 32 A, 42 mΩ, TO-247; lower Q_g (45 nC), but 3× lower I_RP	Not suitable for 130 A sustain duty; better for gate-driven auxiliary switches	Select only for non-main-sustain functions where fast switching outweighs current capacity.

Compared with STW90NF20 and IXFH32N20X3, IRFSL4227PBF uniquely balances 130 A continuous current, 22 mΩ on-resistance, and validated 1000 µJ EPULSE performance-making it the only option qualified for full-power PDP sustain stage replacement without derating.

Availability

IRFSL4227PBF is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, PDP energy recovery systems, and industrial DC bus protection requiring stable component supply across multi-year production cycles.

Supply support for IRFSL4227PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in plasma display, UPS, and industrial motor control applications demanding rugged avalanche performance and low conduction loss.

FAQ

What is the maximum gate-to-source voltage rating for IRFSL4227PBF?

The absolute maximum V_GS is ±30 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 10–15 V for optimal R_DS(on) and safe margin against transients. The gate threshold voltage ranges from 3.0 V to 5.0 V at 250 µA, with a negative temperature coefficient of −13 mV/°C.

Does IRFSL4227PBF have an integrated body diode, and what are its key parameters?

Yes, it includes an integral reverse p–n junction body diode. Key parameters include 1.3 V forward voltage at 46 A and 25°C, 100–150 ns reverse recovery time, and 430–640 nC reverse recovery charge. The diode is rated for 46 A continuous source current and 570 A pulsed source current at 25°C case temperature.

How is thermal performance characterized for IRFSL4227PBF in real-world mounting?

Thermal resistance is specified as R_θJC = 0.45°C/W (typical) from junction to case, measured at the center of the die contact. This value assumes proper mounting torque (1.1 N·m for M3 screws) and use of thermal interface material. Junction-to-ambient R_θJA is 40°C/W for PCB-mounted D2Pak configuration.

Can IRFSL4227PBF be used in synchronous rectification applications?

No-it is not optimized for synchronous rectification due to relatively high Q_rr (430–640 nC) and lack of ultra-low V_SD specification. Its body diode recovery characteristics introduce significant switching loss in high-frequency SR topologies. Use dedicated low-Q_rr, low-V_F Schottky or trench-MOSFET SR devices instead.

IRFSL4227PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL4227PBF FAQ

1.How can I place an order for IRFSL4227PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL4227PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL4227PBF reliable?

The price and inventory of IRFSL4227PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4227PBF is usually 5 days.

3.What payment methods are accepted for IRFSL4227PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4227PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL4227PBF?

IRFSL4227PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL4227PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL4227PBF?

For technical support, including IRFSL4227PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4227PBF requirements.

6.How does Aetrix verify that IRFSL4227PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL4227PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4227PBF meets industry standards.

7.What is the process for return or replacement of IRFSL4227PBF?

All IRFSL4227PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4227PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL4227PBF part is unused and in its original packaging.

Return procedure for IRFSL4227PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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