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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 64-2096PBF

Name: 64-2096PBF
Brand: Infineon Technologies
SKU: 64-2096PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 64-2096PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: 64-2096PBF.pdf

Description:: MOSFET N-CH 75V 160A D2PAK

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Product details

Overview

64-2096PBF from International Rectifier is an N-channel enhancement-mode HEXFET® Power MOSFET designed for high-current, low-voltage switching in power conversion stages. It delivers V_DSS = 75 V, R_DS(on) = 3.8 mΩ (max at V_GS = 10 V, T_J = 25°C), I_D = 160 A continuous (T_C = 25°C), and supports repetitive avalanche up to T_Jmax = 175°C - used in server OR-ing circuits and low-voltage motor drives.

For engineers reviewing the 64-2096PBF datasheet, 64-2096PBF pinout, 64-2096PBF application, or 64-2096PBF equivalent, key selection criteria include on-resistance stability over temperature, gate charge (Q_g = 170–260 nC), diode reverse recovery (Q_rr = 40–60 nC), and thermal resistance (R_θJC = 0.50°C/W).

Technical Context

This device employs advanced silicon processing and D²PAK (TO-263) packaging to minimize conduction losses and maximize current density. Its ultra-low R_DS(on), fast switching (t_r = 90 ns, t_f = 44 ns), and robust body diode (V_SD ≤ 1.3 V, t_rr = 35–53 ns) enable efficient synchronous rectification and bidirectional current handling in DC-DC converters.

The MOSFET supports unclamped inductive switching with validated single-pulse avalanche energy (E_AS = 160 mJ) and repetitive avalanche capability under defined pulse conditions (I_AS = 110 A, L = 0.026 mH, R_G = 25 Ω). Thermal design is enabled by a low junction-to-case resistance (0.50°C/W) and 175°C maximum operating junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Withstands up to 75 V drain-source voltage before breakdown; suitable for 48 V and 12 V bus systems.
R_DS(on)	3.8 mΩ max - Enables <1 W conduction loss at 160 A, critical for high-efficiency OR-ing and motor phase switches.
I_D (cont)	160 A @ T_C = 25°C - High current rating enables single-device replacement of parallel MOSFETs in compact power stages.
Q_g	170–260 nC - Gate drive energy requirement informs gate driver selection (e.g., IR2110/IR2184) and switching loss budget.
t_r/t_f	90 ns / 44 ns - Fast edge rates reduce switching transition time, lowering dynamic losses in hard-switched topologies.
R_θJC	0.50°C/W - Enables direct heatsink mounting with predictable thermal rise; 80°C rise at 160 A conduction implies ~128 W dissipation limit.
Q_rr	40–60 nC - Low reverse recovery charge minimizes shoot-through risk and EMI in synchronous buck and half-bridge configurations.

Pinout & Package

64-2096PBF is housed in a surface-mount D²PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be soldered to large copper pour or heatsink for thermal and electrical performance; contributes <4.5 nH internal inductance.
Source (Pins 1 & 2)	Reference node for gate drive and current return path	Dual-pin layout reduces source inductance (L_S = 7.5 nH); critical for stable gate control during fast dV/dt transitions.
Gate (Pin 3)	Control input for channel modulation	Requires low-impedance gate driver path; Miller charge Q_gd = 66 nC dictates gate resistor sizing to balance speed vs. ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.8 mΩ max at 10 V gate drive - Reduces I²R losses by >30% versus comparable 75 V MOSFETs in 48 V OR-ing applications.
175°C rated junction temperature	Enables operation in thermally constrained environments (e.g., sealed telecom modules) without derating at full current.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching (I_AS = 110 A, L = 0.026 mH) - eliminates need for external snubbers in motor drive freewheeling paths.
Low Q_rr body diode	40–60 nC reverse recovery charge - Minimizes cross-conduction losses and EMI generation in synchronous rectifiers.
Fast turn-off	t_f = 44 ns - Supports >500 kHz switching in high-density DC-DC converters while maintaining efficiency.

Applications

Server OR-ing Circuit

Telecom 48 V Backup Supply

Use Scenario: Parallel hot-swap power supplies feeding a common 12 V or 48 V bus, requiring automatic fault isolation and seamless switchover.

IC Role / Device Role / Timing Role: N-channel MOSFET used as ideal diode controller switch, replacing Schottky diodes to eliminate forward voltage drop.

Use Value: Reduces conduction loss from ~0.4 V × 100 A = 40 W to ~0.0038 Ω × (100 A)² = 38 W - net gain in system efficiency and thermal margin.

Use Scenario: 48 V battery backup system in telecom base stations where redundancy and zero-downtime power continuity are mandatory.

IC Role / Device Role / Timing Role: Bidirectional power switch enabling seamless transfer between AC rectified and battery sources without interruption.

Use Value: Body diode forward voltage ≤1.3 V ensures low-loss reverse conduction during battery discharge; fast t_rr prevents latch-up during source switchover.

Low-Voltage Motor Drive Phase Leg

Industrial DC-DC Synchronous Rectifier

Use Scenario: Half-bridge or 3-phase inverter stage driving brushed or BLDC motors in robotics and automation equipment.

IC Role / Device Role / Timing Role: High-side or low-side switching element handling peak currents up to 700 A pulsed (I_DM) in PWM-driven H-bridge legs.

Use Value: R_DS(on) stability over 25–175°C ensures consistent torque delivery across ambient temperature swings; low Q_g enables clean gate drive at 20–100 kHz PWM frequencies.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V or 5 V output DC-DC converters for industrial PLCs and embedded controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to improve conversion efficiency beyond 95%.

Use Value: Q_rr = 40–60 nC and t_rr = 35–53 ns allow precise timing alignment with primary-side MOSFET dead time, eliminating shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF2907ZPbF	Same die, TO-220 package; R_θJA = 62°C/W (vs. 40°C/W for D²PAK); no exposed drain tab	Limited to lower-power or forced-air-cooled designs; unsuitable for PCB-mounted heatsinking	Select when mechanical constraints prohibit surface-mount assembly or when legacy through-hole footprint is required.
STL220N7F7	75 V, 220 A, R_DS(on) = 2.8 mΩ typ; trench-gate process; Q_g = 220 nC; different gate threshold (2.5–3.5 V)	Better conduction loss but higher gate drive demand; requires gate driver capable of ≥2 A peak sourcing/sinking	Select when lowest possible R_DS(on) is prioritized and gate drive capability supports higher Q_g.

Compared with IRF2907ZPbF, 64-2096PBF offers superior thermal performance via D²PAK mounting and lower R_θJC; compared with STL220N7F7, it trades slightly higher R_DS(on) for proven avalanche ruggedness and simpler gate drive requirements in high-reliability OR-ing.

Availability

64-2096PBF is available at Aetrix Electronics and suitable for server OR-ing circuits, telecom 48 V backup supplies, and low-voltage motor drive phase legs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 64-2096PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, computing, and telecom infrastructure.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-current, low-voltage switching applications demanding ultra-low on-resistance, fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for 64-2096PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 120 A, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D²PAK package and silicon; operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 175°C.

Does 64-2096PBF have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic body diode with V_SD ≤ 1.3 V at I_S = 110 A and T_J = 25°C, t_rr = 35–53 ns, and Q_rr = 40–60 nC. These values are measured under standardized conditions (I_S = 110 A, V_DD = 38 V, di/dt = 100 A/µs) and confirm suitability for synchronous rectification and freewheeling.

Can 64-2096PBF be used in avalanche mode, and what are the test conditions?

Yes, it is rated for repetitive avalanche operation. Single-pulse E_AS = 160 mJ is tested with I_AS = 110 A, L = 0.026 mH, R_G = 25 Ω, V_GS = 10 V, and T_J starting at 25°C. Repetitive use requires adherence to Figure 15/16 curves and thermal management to ensure T_J does not exceed 175°C.

What is the recommended PCB layout for optimal thermal and electrical performance?

A minimum 1" × 1" copper pour (2 oz. thickness, FR-4) connected directly to the drain tab is required. Source pins must be routed with short, wide traces to minimize L_S; gate traces should be shielded from drain noise. Refer to IR application note AN-994 for verified footprint dimensions, solder mask clearance, and reflow profile guidance.

64-2096PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 110A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7580 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

64-2096PBF FAQ

1.How can I place an order for 64-2096PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 64-2096PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 64-2096PBF reliable?

The price and inventory of 64-2096PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 64-2096PBF is usually 5 days.

3.What payment methods are accepted for 64-2096PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 64-2096PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 64-2096PBF?

64-2096PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 64-2096PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 64-2096PBF?

For technical support, including 64-2096PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 64-2096PBF requirements.

6.How does Aetrix verify that 64-2096PBF is sourced from the original manufacturer or authorized distributors?

All 64-2096PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 64-2096PBF meets industry standards.

7.What is the process for return or replacement of 64-2096PBF?

All 64-2096PBF units undergo pre-shipment inspection (PSI). If there is an issue with 64-2096PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 64-2096PBF part is unused and in its original packaging.

Return procedure for 64-2096PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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