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Infineon Technologies IRFSL4310ZPBF
- Part No.:
- IRFSL4310ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFSL4310ZPBF.pdf
- Description:
- MOSFET N-CH 100V 120A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:4,474
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Product details
Overview
IRFSL4310ZPBF from Infineon Technologies is a 100V, 120A (package-limited), D2PAK-packaged N-channel enhancement-mode power MOSFET with 4.8 mΩ typical RDS(on), optimized for high-frequency hard-switched SMPS and synchronous rectification. It features enhanced body diode dV/dt and dI/dt capability, 40 ns reverse recovery time, and 570 pF effective output capacitance (energy-related).
For engineers reviewing the IRFSL4310ZPBF datasheet, IRFSL4310ZPBF pinout, IRFSL4310ZPBF application, or IRFSL4310ZPBF equivalent, key selection criteria include its 100V VDS rating, 120A continuous drain current at TC = 25°C, 120 nC total gate charge, 490 pF Coss, and 1.3 V body diode forward voltage - all critical for high-efficiency DC-DC converter and UPS design.
Technical Context
This MOSFET employs a trench-gate HEXFET structure enabling low on-resistance and fast switching. Its dynamic parameters - 20 ns turn-on delay, 55 ns turn-off delay, and 57 ns fall time - support operation up to several hundred kHz in hard-switched topologies.
The device integrates an intrinsic, optimized body diode with 40 ns trr and 58 nC Qrr at 25°C, enabling robust unclamped inductive switching and synchronous rectification without external Schottky supplementation in medium-power SMPS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V and 60 V bus architectures with margin for transient overvoltage |
| RDS(on) typ. | 4.8 mΩ - enables <1.5 W conduction loss at 75 A, reducing heatsink requirements |
| ID (pkg-limited) | 120 A @ TC = 25°C - defines maximum sustainable DC current under ideal thermal mounting |
| Qg | 120 nC - determines gate driver strength requirement for <100 ns switching transitions |
| Coss eff. (ER) | 570 pF - governs energy loss during turn-off and impacts ZVS feasibility above ~200 kHz |
| trr | 40 ns - allows reliable operation in synchronous buck converters up to 500 kHz without shoot-through risk |
| VSD | 1.3 V - lowers body diode conduction loss during dead-time, improving light-load efficiency |
Pinout & Package
IRFSL4310ZPBF is housed in a surface-mount D2PAK (TO-263) package with standard three-terminal layout: Drain (tab), Source (pins 1–2), Gate (pin 3). The exposed drain pad provides low thermal resistance (RθJC = 0.6 °C/W) and must be soldered to a large copper area for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path and thermal interface | Electrically connected to PCB copper pour; primary heat dissipation path to heatsink or board plane |
| Source (Pins 1 & 2) | Reference node for gate drive and current return | Low-inductance dual-pin connection minimizes source inductance in high-dI/dt switching |
| Gate (Pin 3) | Control terminal for channel modulation | Requires <120 nC charge delivery; sensitive to ringing due to 0.7 Ω internal gate resistance |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | Enables reliable operation in high dv/dt environments (e.g., LLC resonant converters) without snubbers |
| Thermally limited EAS = 475 mJ | Supports single-pulse unclamped inductive switching up to 58 A with 0.28 mH load inverter designs |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020D reflow profile; compatible with Pb-free assembly processes |
| Characterized SOA for avalanche | Validated safe operating area up to 100 μs pulse width, enabling robust protection against inductive fault transients |
Applications
| High-Efficiency Synchronous Rectification | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Secondary-side switching in isolated DC-DC converters for server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes in forward and LLC topologies. Use Value: Reduces conduction loss by >40% vs. 1.2 V Schottky at 50 A, improving full-load efficiency by 1.2–1.8%. | Use Scenario: Inverter stage and battery charging switch in line-interactive and online UPS systems. IC Role / Device Role / Timing Role: High-current bidirectional power switch handling AC/DC conversion and battery discharge paths. Use Value: 120 A continuous rating and 475 mJ avalanche energy enable 1–3 kVA UPS designs without parallel devices. |
| Hard-Switched SMPS | High-Frequency DC-DC Converters |
Use Scenario: Primary-side switch in 100–300 kHz flyback and half-bridge converters for industrial power supplies. IC Role / Device Role / Timing Role: Main power switch subjected to repetitive hard-switching stress and voltage overshoot. Use Value: Improved gate and avalanche ruggedness withstands >100 V/ns dv/dt transients and 1000+ cycles of 100 V inductive switching. | Use Scenario: Point-of-load (POL) regulators in FPGA and ASIC power delivery networks. IC Role / Device Role / Timing Role: High-side switch in multiphase buck converters operating at 300–600 kHz. Use Value: 570 pF Coss eff.(ER) and 120 nC Qg balance switching loss and drive complexity for optimal 500 kHz efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFB4310ZPBF | TO-262 package; identical silicon die but different leadform and RθJA (62 °C/W vs. 40 °C/W) | Better suited for through-hole prototyping or legacy TO-262 PCB footprints | Select when mechanical compatibility with TO-262 sockets or manual assembly is required |
| STW90NF20 | 200 V VDS, 90 A ID, higher RDS(on) (9.5 mΩ), different gate charge (140 nC) | Used in higher-voltage 110 VAC input PFC stages where 100 V rating is insufficient | Choose only if system requires >110 V blocking; not a drop-in replacement due to voltage/current mismatch |
Compared with IRFB4310ZPBF, IRFSL4310ZPBF offers lower thermal resistance in surface-mount layouts and tighter gate charge distribution; versus STW90NF20, it delivers superior conduction efficiency below 100 V but lacks voltage headroom for universal-input front-end use.
Availability
IRFSL4310ZPBF is available at Aetrix Electronics and suitable for high-frequency SMPS, uninterruptible power supply (UPS), and synchronous rectification applications requiring stable component supply and long-term industrial availability.
Supply support for IRFSL4310ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to Infineon's HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in switched-mode power supplies and motor control systems.
FAQ
What is the maximum continuous drain current for IRFSL4310ZPBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 90 A, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures junction temperature remains ≤175°C under sustained operation with proper heatsinking.
Does IRFSL4310ZPBF have a fully characterized avalanche SOA?
Yes - the datasheet provides validated single-pulse avalanche energy (EAS) of 475 mJ at TJ = 25°C, with curves for EAS vs. temperature and avalanche current vs. pulse width. Repetitive avalanche is rated at 300 mJ under defined conditions (L = 0.28 mH, RG = 25 Ω, IAS = 58 A).
Can IRFSL4310ZPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.11 V/°C for VBRDSS) and matched threshold voltage across production lots enable stable current sharing. Designers must ensure symmetrical PCB layout, gate drive, and thermal coupling to avoid imbalance.
What is the recommended gate resistor value for hard-switched 200 kHz operation?
A 5–10 Ω gate resistor is recommended to dampen ringing while maintaining <100 ns switching transitions. At 200 kHz, this balances switching loss (reduced by faster edges) and EMI (controlled by slew rate), given the device's 120 nC Qg and 0.7 Ω internal RG.
IRFSL4310ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 170 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6860 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRFSL4310ZPBF FAQ
1.How can I place an order for IRFSL4310ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFSL4310ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFSL4310ZPBF reliable?
The price and inventory of IRFSL4310ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4310ZPBF is usually 5 days.
3.What payment methods are accepted for IRFSL4310ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4310ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFSL4310ZPBF?
IRFSL4310ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFSL4310ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFSL4310ZPBF?
For technical support, including IRFSL4310ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4310ZPBF requirements.
6.How does Aetrix verify that IRFSL4310ZPBF is sourced from the original manufacturer or authorized distributors?
All IRFSL4310ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4310ZPBF meets industry standards.
7.What is the process for return or replacement of IRFSL4310ZPBF?
All IRFSL4310ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4310ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFSL4310ZPBF part is unused and in its original packaging.
Return procedure for IRFSL4310ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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