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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU8721-701PBF

Name: IRLU8721-701PBF
Brand: Infineon Technologies
SKU: IRLU8721-701PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU8721-701PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-4, DPAK (3 Leads + Tab)

Datasheet:: IRLU8721-701PBF.pdf

Description:: MOSFET N-CH 30V 65A I-PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLU8721-701PBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in I-Pak package, rated for 30V V_DS, 6.3 mΩ R_DS(on) at V_GS = 10 V, and 8.5 nC total gate charge. It delivers high-frequency switching performance in synchronous buck converters for CPU power delivery and telecom DC-DC modules with synchronous rectification.

For engineers reviewing the IRLU8721-701PBF datasheet, IRLU8721-701PBF pinout, IRLU8721-701PBF application, or IRLU8721-701PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, fully characterized avalanche capability, ultra-low gate impedance, and body diode reverse recovery charge (Q_rr = 24–36 nC) for hard-switched topologies.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) enables robust 4.5 V logic-level drive compatibility, while its 3.4 nC Q_gd and 4.6 nC Q_sw support high-frequency operation up to several MHz in resonant and synchronous rectifier circuits.

The device integrates a monolithic body diode with 17–26 ns t_rr and 24–36 nC Q_rr, enabling reliable unclamped inductive switching. Thermal design is supported by R_θJC = 2.3 °C/W and R_θJA = 50 °C/W (PCB mount), allowing sustained 65 A continuous drain current at T_C = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom/industrial DC-DC stages.
R_DS(on) max	8.4 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 30 A, critical for high-efficiency processor VRMs.
Q_g	8.5 nC - Low gate charge reduces driver power and enables efficient 1–2 MHz switching in synchronous buck converters.
t_r/t_f	30 ns / 6.5 ns - Fast edge rates minimize switching transition losses and EMI generation in high-density power modules.
E_AS	93 mJ - Fully characterized single-pulse avalanche energy supports robustness against inductive turn-off transients without external snubbers.
Q_rr	24–36 nC - Low reverse recovery charge reduces diode conduction loss and cross-conduction risk in synchronous rectification.
R_θJC	2.3 °C/W - Enables direct heatsink mounting for thermal management in high-power density applications like server VRMs.

Pinout & Package

IRLU8721-701PBF uses the industry-standard I-Pak (TO-251AA) surface-mount package with gull-wing leads. The exposed drain pad on the bottom provides low-inductance, high-current path and enhanced thermal transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 0–10 V logic-level signals; 2.3 Ω gate resistance minimizes ringing and simplifies driver design.
D (Drain)	High-side switch node	Internally connected to exposed metal tab; must be routed to high-current, low-inductance plane for optimal EMI and thermal performance.
S (Source)	Reference node / return path	Provides common reference for gate drive and current sensing; ties directly to power ground plane to minimize noise coupling.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers without level-shifting or gate drivers.
Fully characterized avalanche	Guarantees safe operation under unclamped inductive switching (E_AS = 93 mJ), eliminating need for external clamping components.
Low Q_gd/Q_sw ratio	3.4 nC Q_gd and 4.6 nC Q_sw improve Miller immunity and enable stable hard-switching up to 2 MHz.
Optimized body diode	17–26 ns t_rr and low Q_rr reduce reverse recovery loss and prevent shoot-through in synchronous rectifier configurations.

Applications

Server CPU Voltage Regulator Modules

Telecom Isolated DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying core voltage to x86 and ARM processors in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–600 kHz with precise dead-time control.

Use Value: 6.3 mΩ R_DS(on) at 10 V and 8.5 nC Q_g reduce conduction and switching losses, improving full-load efficiency by >1.2% versus legacy 12 mΩ parts.

Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V output isolated flyback or forward converter for 5G base station power supplies.

IC Role / Device Role / Timing Role: High-frequency rectifying switch replacing Schottky diodes to minimize forward drop and thermal stress.

Use Value: 1.0 V V_SD body diode forward voltage and 24–36 nC Q_rr cut rectifier losses by 35% compared to 40 V Schottky diodes at 20 A load.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Management

Use Scenario: Half-bridge high-side switch in compact BLDC motor gate driver IC auxiliary supply stage.

IC Role / Device Role / Timing Role: 30 V N-channel switch controlling isolated 12 V bias rail for gate driver ICs in 24 V systems.

Use Value: 30 V V_DS rating and -55 to +175 °C T_J range ensure reliability across automotive temperature extremes and load dump transients.

Use Scenario: Power switch in camera module or radar ECU power sequencing circuit requiring fast turn-on and low quiescent loss.

IC Role / Device Role / Timing Role: Load switch enabling/disabling 5 V or 3.3 V subsystem rails under microcontroller control.

Use Value: 1.35–2.35 V V_GS(th) ensures clean turn-on at 3.3 V logic levels, while 100 nA I_GSS guarantees minimal leakage during sleep mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8721PbF	D-Pak package; identical electrical specs (30 V, 6.3 mΩ, 8.5 nC), but higher R_θJA (110 °C/W vs. 50 °C/W).	Better suited for through-hole prototyping or lower-power PCBs where thermal via density is limited.	Select when board layout lacks thermal vias or requires manual assembly compatibility.
SI2302DS-T1-GE3	Smaller SOT-23 package; lower current rating (2.4 A continuous), higher R_DS(on) (65 mΩ), and no avalanche rating.	Limited to low-power always-on loads (e.g., sensor bias, LED indicators) - not suitable for switching power stages.	Choose only for space-constrained, sub-1 W applications where avalanche robustness is unnecessary.

Compared with IRLR8721PbF, the IRLU8721-701PBF offers superior thermal performance in surface-mount designs due to its I-Pak package's lower R_θJA; versus SI2302DS-T1-GE3, it delivers 27× lower R_DS(on) and full avalanche ruggedness-making it the only viable option for high-current, high-reliability power conversion.

Availability

IRLU8721-701PBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC converters, industrial motor drive auxiliary supplies, and automotive ADAS power sequencing requiring stable component supply and long-term manufacturing continuity.

Supply support for IRLU8721-701PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation and AEC-Q101 qualification expertise.

The IRLU8721-701PBF belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

Is IRLU8721-701PBF RoHS-compliant and lead-free?

Yes. IRLU8721-701PBF carries the "PbF" suffix per Infineon's part numbering convention, confirming full compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 moisture sensitivity. It contains no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE above threshold limits.

What is the maximum continuous drain current at 100°C case temperature?

Per the Absolute Maximum Ratings table, IRLU8721-701PBF supports 46 A continuous drain current at T_C = 100°C and V_GS = 10 V. This derating reflects thermal limits-not electrical failure-and assumes adequate PCB copper area and thermal vias per Infineon's recommended footprint.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 1–10 Ω) is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with the device's 2.3 Ω intrinsic gate resistance and 1030 pF C_iss. Without it, ringing on V_GS can cause false turn-on or increased switching loss, especially at >500 kHz.

Can IRLU8721-701PBF replace IRLR8721PbF in existing D-Pak layouts?

No. IRLU8721-701PBF uses the I-Pak (TO-251AA) package with gull-wing leads and a different land pattern than the D-Pak (TO-252AA) IRLR8721PbF. Direct replacement requires PCB redesign to accommodate the smaller body size, different lead pitch, and exposed drain pad orientation.

IRLU8721-701PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-4, DPAK (3 Leads + Tab)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1030 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: I-PAK (LF701)

IRLU8721-701PBF FAQ

1.How can I place an order for IRLU8721-701PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU8721-701PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU8721-701PBF reliable?

The price and inventory of IRLU8721-701PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU8721-701PBF is usually 5 days.

3.What payment methods are accepted for IRLU8721-701PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU8721-701PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU8721-701PBF?

IRLU8721-701PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU8721-701PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU8721-701PBF?

For technical support, including IRLU8721-701PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU8721-701PBF requirements.

6.How does Aetrix verify that IRLU8721-701PBF is sourced from the original manufacturer or authorized distributors?

All IRLU8721-701PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU8721-701PBF meets industry standards.

7.What is the process for return or replacement of IRLU8721-701PBF?

All IRLU8721-701PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU8721-701PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU8721-701PBF part is unused and in its original packaging.

Return procedure for IRLU8721-701PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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