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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL3806PBF

Name: IRFSL3806PBF
Brand: Infineon Technologies
SKU: IRFSL3806PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL3806PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL3806PBF.pdf

Description:: MOSFET N-CH 60V 43A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL3806PBF from Infineon Technologies is a 60V, 43A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers 12.6mΩ typical R_DS(on), 22nC total gate charge, and 22ns typical reverse recovery time (t_rr) with its robust body diode - enabling efficient operation in UPS and telecom power stages.

For engineers reviewing the IRFSL3806PBF datasheet, IRFSL3806PBF pinout, IRFSL3806PBF application, or IRFSL3806PBF equivalent, key selection criteria include avalanche ruggedness (250mJ E_AS), dV/dt immunity (>7.1V/ns), dynamic SOA compliance, and thermal resistance (R_θJC = 2.12°C/W) under high-current pulsed conditions.

Technical Context

This MOSFET employs planar V-groove silicon technology to achieve low conduction loss and fast switching with controlled Miller effect. Its gate threshold voltage (2.0–4.0V) ensures reliable turn-on with standard 10V logic drivers, while the 67pF Crss supports stable operation up to 1MHz switching frequencies.

The integrated body diode features enhanced dI/dt capability (≤1580A/µs) and low V_SD (1.3V max), making it suitable for freewheeling and synchronous rectification without external Schottky supplementation in 48V input DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Withstands 48V bus transients with 20% margin; avoids avalanche triggering in nominal 48V SMPS designs.
R_DS(on) typ.	12.6mΩ @ V_GS = 10V, T_J = 25°C - Delivers ≤0.55W conduction loss at 33A DC, reducing heatsink requirements.
Q_g max.	30nC - Enables <1µs turn-on with 30mA gate driver; compatible with UC384x and UCC27xx families.
t_rr max.	33ns @ T_J = 125°C - Minimizes commutation loss and EMI in 300kHz+ synchronous buck converters.
E_AS	250mJ - Supports unclamped inductive switching at 25A without failure; validated per JEDEC JESD24-11.
R_θJC	2.12°C/W - Allows 73W continuous dissipation at T_C = 100°C; enables compact TO-220 thermal design.

Pinout & Package

IRFSL3806PBF uses the TO-220AB package with isolated tab (non-conductive mounting surface), rated for 10lb·in (1.1N·m) screw torque. The case is electrically connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10V logic-level signal; 0.79Ω internal gate resistance damps oscillation during fast edge transitions.
D (Drain)	High-side power output	Connected to PCB copper pour or heatsink; carries full load current and withstands 60V breakdown.
S (Source)	Power return / reference node	Forms Kelvin connection for current sensing; referenced to ground in low-side switch configurations.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	250mJ single-pulse E_AS - Eliminates need for external snubbers in flyback and LLC resonant converters.
Optimized body diode dV/dt immunity	>7.1V/ns - Prevents false turn-on during high dv/dt commutation in half-bridge topologies.
Low C_{oss eff.}(TR)	230pF - Reduces turn-off energy loss and improves light-load efficiency in ZVS circuits.
Characterized SOA curves	Validated up to 10ms pulse width - Enables safe operation in motor drive gate-drive bootstrap circuits.
Lead-free (PbF) construction	RoHS-compliant plating and molding compound - Meets IPC-J-STD-020D reflow profile requirements.

Applications

Telecom Rectifier Modules

Industrial UPS Systems

Use Scenario: 48V input, 12V/50A output synchronous buck converter in telecom shelf power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300kHz with adaptive gate timing.

Use Value: 12.6mΩ R_DS(on) reduces conduction loss by 38% vs. legacy 20mΩ devices, improving full-load efficiency to ≥95.2%.

Use Scenario: Battery-backed 3kVA online UPS inverter stage with bidirectional energy flow.

IC Role / Device Role / Timing Role: High-current switching element in IGBT gate-drive auxiliary supply and battery charging circuit.

Use Value: 170A pulsed source current rating supports 10ms overload events without thermal runaway.

Server VRM Power Stages

EV Onboard Charger PFC

Use Scenario: Multiphase 12V VRM delivering 300A to CPU/GPU with interleaved 500kHz operation.

IC Role / Device Role / Timing Role: High-side switch in buck-derived topology with active clamp control.

Use Value: 22nC Q_g allows clean 5ns rise/fall edges using 2A peak gate drivers, minimizing shoot-through risk.

Use Scenario: Boost PFC stage in 6.6kW OBC handling 240VAC input with 400VDC bus.

IC Role / Device Role / Timing Role: Fast-recovery body diode used for zero-voltage switching assist during line-voltage transitions.

Use Value: 22ns t_rr at 25°C limits reverse recovery charge to 17nC, cutting diode switching loss by 41% vs. standard MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 14mΩ typ., Q_g = 35nC, no avalanche rating published	Lacks specified E_AS and dV/dt immunity data - unsuitable for unclamped inductive loads	Prefer only in cost-sensitive, low-stress linear regulator bypass roles
IXTP38N10P	V_DSS = 100V, R_DS(on) = 22mΩ, t_rr = 45ns	Higher voltage rating trades off conduction loss and speed - increases switching loss in 48V systems	Select only when system requires 100V bus margin or legacy 100V design reuse

Compared with STP60NF06 and IXTP38N10P, IRFSL3806PBF provides optimal balance of low R_DS(on), fast t_rr, and documented avalanche capability - making it the preferred choice for high-reliability 48V SMPS where thermal margin and transient robustness are critical.

Availability

IRFSL3806PBF is available at Aetrix Electronics and suitable for telecom rectifier modules, industrial UPS systems, server VRM power stages, and EV onboard charger PFC circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFSL3806PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in telecom, computing, and industrial infrastructure equipment.

FAQ

Is IRFSL3806PBF suitable for surface-mount assembly?

No - the TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's note on page 8. It requires through-hole mounting with mechanical screw attachment to a heatsink. Thermal performance degrades significantly if soldered directly to PCB without proper mechanical clamping and thermal interface material.

What is the maximum allowable gate-source voltage?

The absolute maximum V_GS is ±20V. Operation above +20V risks permanent gate oxide damage, while below –20V may cause gate punch-through. For reliable 10V drive, use a clamped gate driver (e.g., TC4420 with Zener clamp) to prevent overshoot during fast switching transitions.

Does IRFSL3806PBF have a specified avalanche current rating?

Yes - the datasheet specifies I_AR = 25A for single-pulse avalanche events under defined test conditions (L = 0.23mH, R_G = 25Ω, V_GS = 10V). This rating is thermally limited and validated at T_J = 25°C start temperature; derating is required above 100°C ambient.

How does the body diode performance compare to discrete Schottky diodes?

Its V_SD = 1.3V max is higher than Schottky diodes (~0.5V), but its 22ns t_rr and 17nC Q_rr enable lower EMI and reduced ringing in synchronous rectification. It eliminates discrete part count and layout complexity, though efficiency gain depends on operating frequency and load current profile.

IRFSL3806PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1150 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL3806PBF FAQ

1.How can I place an order for IRFSL3806PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL3806PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL3806PBF reliable?

The price and inventory of IRFSL3806PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL3806PBF is usually 5 days.

3.What payment methods are accepted for IRFSL3806PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL3806PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL3806PBF?

IRFSL3806PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL3806PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL3806PBF?

For technical support, including IRFSL3806PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL3806PBF requirements.

6.How does Aetrix verify that IRFSL3806PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL3806PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL3806PBF meets industry standards.

7.What is the process for return or replacement of IRFSL3806PBF?

All IRFSL3806PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL3806PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL3806PBF part is unused and in its original packaging.

Return procedure for IRFSL3806PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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