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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU2307ZPBF

Name: IRFU2307ZPBF
Brand: Infineon Technologies
SKU: IRFU2307ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU2307ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU2307ZPBF.pdf

Description:: MOSFET N-CH 75V 42A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU2307ZPBF from Infineon Technologies is a 75V, 42A N-channel DPAK-packaged power MOSFET with 16mΩ R_DS(on) at V_GS = 10V, 175°C junction rating, and rated repetitive avalanche capability. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRFU2307ZPBF datasheet, IRFU2307ZPBF pinout, IRFU2307ZPBF application, or IRFU2307ZPBF equivalent, key selection criteria include its 16mΩ on-resistance at 10V gate drive, 50nC total gate charge, 175°C thermal limit, and DPAK package suitability for surface-mount PCB layouts with moderate power dissipation.

Technical Context

This device employs Infineon's HEXFET® silicon process to achieve ultra-low R_DS(on) per die area while maintaining robust avalanche performance. Its body diode exhibits 1.3V forward voltage at 32A and 31ns reverse recovery time, enabling efficient freewheeling in hard-switched topologies.

The MOSFET features fast switching (t_d(on) = 16ns, t_f = 29ns) and low output capacitance (C_oss = 280pF at V_DS = 25V), supporting high-frequency operation up to 500kHz in buck and half-bridge configurations with minimal switching loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 48V bus systems.
R_DS(on)	16mΩ @ V_GS = 10V - On-state resistance directly determines conduction loss (I²R) in continuous-current applications.
I_D	42A @ T_C = 25°C - Continuous drain current rating under ideal heatsinking; derates to 21A at 100°C case temperature.
Q_g	50nC (typ) - Total gate charge dictates driver strength requirement and switching transition time in PWM circuits.
T_J max	175°C - Maximum junction temperature enables reliable operation in sealed enclosures or high ambient environments.
E_AS	210mJ - Single-pulse avalanche energy rating supports unclamped inductive turn-off without failure in motor control or relay driving.
C_iss	2190pF - Input capacitance affects gate drive loop stability and influences Miller effect during high dv/dt transitions.

Pinout & Package

IRFU2307ZPBF uses the industry-standard DPAK (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.73mm × 6.22mm × 2.39mm and is lead-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side rail; carries full load current in common-source configuration.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring ≥10V for full enhancement; sensitive to ESD and ringing due to 50nC Q_g.
Pin 3 (Drain)	Power output (D)	Exposed metal pad on bottom surface; electrically and thermally connected to drain; must be soldered to large copper pour for thermal management.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	16mΩ at 10V gate drive reduces conduction losses by >30% vs. legacy 75V MOSFETs in 12–48V DC-DC stages.
Repetitive avalanche rated	Rated for controlled repetitive avalanche events up to T_Jmax, enabling robustness in inductive load switching without external snubbers.
Fast body diode	31ns t_rr and 31nC Q_rr minimize reverse recovery loss and EMI in synchronous rectification and H-bridge freewheeling.
175°C junction rating	Enables operation in high-ambient environments (e.g., automotive under-hood, industrial PLCs) without thermal derating penalties.
DPAK thermal design	Exposed drain pad provides 1.42°C/W junction-to-case thermal resistance, allowing >3W continuous dissipation with 2oz copper and 2-in² thermal pad.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: Step-down conversion from 48V battery to 12V logic rail in telecom power systems.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 300kHz with 10V gate drive and 32A peak current.

Use Value: 16mΩ R_DS(on) limits conduction loss to <1.6W at 32A, improving efficiency over 94% at full load.

Use Scenario: Full-bridge H-bridge controlling bidirectional 24V/20A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side quadrant switch handling PWM commutation and body-diode freewheeling during direction reversal.

Use Value: 31ns t_rr and 1.3V V_SD reduce shoot-through risk and freewheeling loss by 22% vs. standard MOSFETs.

Industrial Power Supply

LED Constant-Current Driver

Use Scenario: Primary-side switching in 200W offline flyback supply with universal AC input.

IC Role / Device Role / Timing Role: Clamp-assisted active clamp flyback switch with 75V V_DSS margin above reflected output voltage.

Use Value: 210mJ E_AS withstands leakage inductance spikes without clamping diode, simplifying layout and reducing BOM count.

Use Scenario: High-current LED string driver delivering 3.5A constant current from 36V bus in streetlight fixture.

IC Role / Device Role / Timing Role: Linear or PWM-controlled pass element in analog dimming architecture with thermal foldback protection.

Use Value: 175°C T_Jmax allows sustained operation at 125°C ambient without derating, extending lifetime in enclosed luminaires.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75V, 75A, 12mΩ R_DS(on), TO-220 package, higher current but larger footprint and no DPAK thermal pad.	Suitable for through-hole prototyping or heatsink-mounted designs where board space is unconstrained.	Select when higher current headroom is needed and thermal interface to heatsink is preferred over PCB copper.
IXTP75N075T	75V, 75A, 10mΩ R_DS(on), TO-220AB package, enhanced avalanche rating (E_AS = 420mJ), but no surface-mount option.	Better suited for high-reliability industrial inverters where single-event ruggedness outweighs SMT assembly needs.	Choose when system-level fault tolerance requires >2× avalanche energy margin and mechanical mounting is acceptable.

Compared with STP75NF75 and IXTP75N075T, IRFU2307ZPBF offers optimal balance of low-profile DPAK packaging, verified 175°C operation, and sufficient 210mJ avalanche energy for cost-sensitive SMT power stages-making it preferred for space-constrained, high-volume industrial and lighting designs.

Availability

IRFU2307ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drives, and industrial power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFU2307ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, automotive, and renewable energy systems-designed for low conduction and switching loss under real-world thermal and dynamic stress.

FAQ

What is the maximum gate-source voltage rating for IRFU2307ZPBF?

The absolute maximum V_GS is ±20V. Operation beyond ±20V risks permanent gate oxide damage. Recommended gate drive is +10V to +15V for full enhancement and -5V to -10V for fast turn-off, with series gate resistor selected to limit dV/dt-induced Miller current.

Does IRFU2307ZPBF have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic N-channel MOSFET body diode. Key parameters include 1.3V forward voltage at 32A, 31ns reverse recovery time (t_rr), and 31nC reverse recovery charge (Q_rr) at T_J = 25°C. These values increase with junction temperature and must be accounted for in synchronous rectifier timing.

Can IRFU2307ZPBF be used in linear mode (ohmic region) for analog current regulation?

It is not recommended for sustained linear-mode operation. While the SOA curve permits limited pulse operation, continuous linear use causes rapid thermal runaway due to positive temperature coefficient of R_DS(on). For analog current control, dedicated lateral DMOS or bipolar transistors with guaranteed Safe Operating Area are preferred.

What is the thermal resistance from junction to case (R_θJC) and how should it be applied in layout?

R_θJC is 1.42°C/W, measured from die junction to the exposed drain pad surface. To achieve this value, the DPAK drain pad must be soldered to ≥2-in² of 2-oz copper with ≥4 thermal vias (0.3mm diameter, spaced ≤2mm apart) connecting to inner or backside ground planes. Inadequate copper reduces effective R_θJC to >3°C/W.

IRFU2307ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2190 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU2307ZPBF FAQ

1.How can I place an order for IRFU2307ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU2307ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU2307ZPBF reliable?

The price and inventory of IRFU2307ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU2307ZPBF is usually 5 days.

3.What payment methods are accepted for IRFU2307ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU2307ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU2307ZPBF?

IRFU2307ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU2307ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU2307ZPBF?

For technical support, including IRFU2307ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU2307ZPBF requirements.

6.How does Aetrix verify that IRFU2307ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFU2307ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU2307ZPBF meets industry standards.

7.What is the process for return or replacement of IRFU2307ZPBF?

All IRFU2307ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU2307ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU2307ZPBF part is unused and in its original packaging.

Return procedure for IRFU2307ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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