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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SIHP240N60E-GE3 MOSFET N-CH 600V 12A TO220AB Vishay Siliconix	159	RFQ	Datasheet	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	240mOhm @ 5.5A, 10V	5V @ 250µA	23 nC @ 10 V	±30V	795 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRFBC30APBF MOSFET N-CH 600V 3.6A TO220AB Vishay Siliconix	906	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	4.5V @ 250µA	23 nC @ 10 V	±30V	510 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SIHP22N60AE-BE3 N-CHANNEL 600V Vishay Siliconix	1,944	RFQ	Datasheet	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	96 nC @ 10 V	±30V	1451 pF @ 100 V	-	179W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRF640STRRPBF MOSFET N-CH 200V 18A TO263 Vishay Siliconix	1,458	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	70 nC @ 10 V	±20V	1300 pF @ 25 V	-	3.1W (Ta), 130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFZ48PBF MOSFET N-CH 60V 50A TO220AB Vishay Siliconix	978	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	18mOhm @ 43A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	2400 pF @ 25 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRFZ48RPBF MOSFET N-CH 60V 50A TO220AB Vishay Siliconix	948	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	18mOhm @ 43A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	2400 pF @ 25 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRF740ALPBF MOSFET N-CH 400V 10A I2PAK Vishay Siliconix	615	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 6A, 10V	4V @ 250µA	36 nC @ 10 V	±30V	1030 pF @ 25 V	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF740ASTRLPBF MOSFET N-CH 400V 10A D2PAK Vishay Siliconix	550	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 6A, 10V	4V @ 250µA	36 nC @ 10 V	±30V	1030 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIHH240N60E-T1-GE3 MOSFET N-CH 600V 12A PPAK 8 X 8 Vishay Siliconix	2,736	RFQ	Datasheet	EF	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	240mOhm @ 5.5A, 10V	5V @ 250µA	23 nC @ 10 V	±30V	783 pF @ 100 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8
IRF9Z34STRRPBF MOSFET P-CH 60V 18A D2PAK Vishay Siliconix	361	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	18A (Tc)	10V	140mOhm @ 11A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	1100 pF @ 25 V	-	3.7W (Ta), 88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)

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