Vishay Siliconix IRFBC30APBF

Overview

IRFBC30APBF from Vishay Siliconix is a 600 V, 3.6 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage flyback SMPS topologies with low gate charge (23 nC) and rugged avalanche capability (290 mJ). It delivers stable switching performance in uninterruptible power supplies and industrial DC-DC converters where high dV/dt immunity (7.0 V/ns) and body diode recovery time (400–600 ns) are critical.

For engineers reviewing the IRFBC30APBF datasheet, IRFBC30APBF pinout, IRFBC30APBF application, or IRFBC30APBF equivalent, this part is selected for high-reliability 480 V bus switching, unclamped inductive load handling, and thermally constrained designs requiring R_DS(on) ≤ 2.2 Ω at 10 V drive and junction-to-case thermal resistance of 1.7 °C/W.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized C_iss (510 pF), C_oss (70 pF), and C_rss (3.5 pF) to support precise snubber design and EMI prediction in hard-switched topologies. Its gate threshold voltage range (2.0–4.5 V) ensures robust noise immunity while enabling direct drive from standard 10 V gate drivers.

The device features a specified effective output capacitance (C_{oss eff.} = 31 pF) validated across 0–480 V V_DS, enabling accurate energy loss calculation during turn-off. Avalanche ratings-290 mJ single-pulse and 7.4 mJ repetitive-are measured under defined conditions (L = 41 mH, I_AS = 3.6 A) and supported by guaranteed dV/dt ruggedness up to 7.0 V/ns.

Key Specifications

Pinout & Package

IRFBC30APBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 10 lbf·in mounting torque and 300 °C peak soldering temperature. The package provides low thermal resistance (R_thJC = 1.7 °C/W) and mechanical stability for high-power board-level mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Compared with STP6NK60ZFP and FQP6N60C, the IRFBC30APBF offers superior avalanche ruggedness and fully characterized dynamic parameters critical for flyback reliability, while trading off some R_DS(on) for proven dV/dt immunity and consistent C_{oss eff.} modeling.

Availability

IRFBC30APBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, uninterruptible power supplies, and industrial flyback SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.

Supply support for IRFBC30APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The IRFBC30APBF belongs to Vishay's high-voltage planar MOSFET product line, engineered for robustness in unclamped inductive switching and demanding offline power conversion applications.

FAQ

What is the maximum continuous drain current for IRFBC30APBF at 100 °C case temperature?

The IRFBC30APBF supports 2.3 A continuous drain current at T_C = 100 °C, derated linearly from 3.6 A at 25 °C using the 0.69 W/°C derating factor. This value is confirmed in the Absolute Maximum Ratings table of the Vishay datasheet S21-0868-Rev. C and reflects thermal limits under sustained conduction without exceeding 150 °C junction temperature. The IRFBC30APBF must be heatsinked accordingly to maintain safe operation.

Does IRFBC30APBF have a fully characterized body diode for flyback freewheeling?

Yes, the IRFBC30APBF includes complete body diode specifications: V_SD = 1.6 V at 3.6 A and 25 °C, t_rr = 400–600 ns, and Q_rr = 1.1–1.7 μC. These parameters are measured under standardized conditions (T_J = 25 °C, I_F = 3.6 A, dI/dt = 100 A/μs) and published in the Vishay datasheet S21-0868-Rev. C. The IRFBC30APBF's characterized diode enables accurate loss modeling in flyback and forward converter freewheel paths.

Is IRFBC30APBF RoHS-compliant and halogen-free?

The IRFBC30APBF is RoHS-compliant and lead-free, as indicated by the "PbF" suffix. The variant IRFBC30APbF-BE3 (exact ordering row) is both RoHS-compliant and halogen-free, meeting Vishay's material categorization per document 99912. Compliance status is explicitly stated in the Ordering Information section of the Vishay datasheet S21-0868-Rev. C. The IRFBC30APBF meets JEDEC JS-001 ESD standards and is qualified for industrial temperature range (-55 to +150 °C).

What is the gate-source threshold voltage range for IRFBC30APBF?

The IRFBC30APBF has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.5 V at T_J = 25 °C and I_D = 250 μA, per the Vishay datasheet S21-0868-Rev. C. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious activation. The IRFBC30APBF does not qualify as a logic-level MOSFET, as its minimum V_GS(th) exceeds 1.5 V and it is not specified for 5 V drive.

Can IRFBC30APBF replace IRFBC30 in existing designs?

Yes, the IRFBC30APBF is a direct drop-in replacement for the legacy IRFBC30, sharing identical electrical specifications, pinout, and TO-220AB package. Key parameters-including V_DS = 600 V, R_DS(on) = 2.2 Ω, Q_g = 23 nC, and E_AS = 290 mJ-are unchanged. The IRFBC30APBF adds RoHS compliance and improved gate ruggedness per Vishay's updated qualification. No PCB or layout changes are required when upgrading from IRFBC30 to IRFBC30APBF.