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Vishay Siliconix SIHH240N60E-T1-GE3
- Part No.:
- SIHH240N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH240N60E-T1-GE3.pdf
- Description:
- MOSFET N-CH 600V 12A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:2,736
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Product details
Overview
SIHH240N60E-T1-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, RDS(on) = 0.208 Ω (typ.) at VGS = 10 V, Qg = 15 nC (typ.), and avalanche-rated (EAS = 81 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.
For engineers reviewing the SIHH240N60E-T1-GE3 datasheet, SIHH240N60E-T1-GE3 pinout, SIHH240N60E-T1-GE3 application, or SIHH240N60E-T1-GE3 equivalent, key selection criteria include its 600 V VDS, Kelvin-source-enhanced gate control, Co(er) = 32 pF for reduced switching loss, and RthJC = 1.0 °C/W thermal resistance enabling high-power-density designs.
Technical Context
This E-series MOSFET employs 4th-generation trench-gate technology optimized for hard-switched and resonant topologies. Its low figure-of-merit (RDS(on) × Qg = 3.13 Ω·nC) and energy-related output capacitance (Co(er) = 32 pF) reduce both conduction and turn-off losses in continuous conduction mode (CCM) PFC and LLC half-bridge stages.
The integrated Kelvin source terminal enables precise gate drive referencing, minimizing voltage overshoot during fast switching. Its 100 V/ns dv/dt rating at TJ = 125 °C and unclamped inductive switching (UIS) capability support robust operation in high-noise industrial environments without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC input rectified to ~560 V DC bus with margin for transient overvoltage in telecom/server PFC |
| RDS(on) typ. | 0.208 Ω @ VGS = 10 V - enables ≤1.25 W conduction loss at 2.5 A RMS in 3.3 kW PFC stage |
| Qg max. | 23 nC - determines gate driver current requirement (≥250 mA peak for 100 ns turn-on with 9.1 Ω Rg) |
| EAS | 81 mJ - withstands single-pulse inductive energy without failure in motor drive or welding auxiliary circuits |
| RthJC | 1.0 °C/W - allows 89 W dissipation with ≤90 °C case-to-junction rise, supporting compact heatsink integration |
| Co(er) | 32 pF - reduces turn-off switching loss by 35% vs. legacy 600 V MOSFETs with similar RDS(on) |
| ID cont. @ TC = 100 °C | 7 A - defines maximum continuous current under real-world board-level thermal conditions |
Pinout & Package
Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm × 1.0 mm), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad on bottom side for thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | High-impedance control input; requires <100 nA leakage drive; Kelvin source minimizes gate loop inductance |
| Pin 2 | Kelvin Source | Low-inductance reference path for gate driver return-separate from power source to eliminate source inductance effects |
| Pin 3 | Source | Main power return path carrying full load current; connects to PCB ground plane via multiple vias |
| Pin 4 | Drain | High-voltage power input/output node; soldered to large copper area for thermal and electrical conduction |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E series technology | Optimized trench cell layout reduces RDS(on) × Qg FOM to 3.13 Ω·nC, improving efficiency in 100–300 kHz PFC stages |
| Kelvin source connection | Eliminates source inductance impact on gate drive, enabling stable 100 V/ns dv/dt operation without oscillation |
| Avalanche energy rated (UIS) | 81 mJ single-pulse rating allows safe operation under inductive load interruption without external clamping |
| Low Co(er) = 32 pF | Reduces turn-off loss by limiting stored energy in output capacitance-critical for ZVS/ZCS soft-switching topologies |
| 150 °C max junction temperature | Enables operation in sealed server chassis with ambient up to 85 °C and case temp up to 100 °C |
Applications
| Server & Telecom PFC | Industrial Motor Drives |
|---|---|
|
Use Scenario: Active boost PFC stage in 3.3 kW telecom rectifier operating at 100 kHz with 400 V AC input. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles 12 A peak drain current with 480 V VDS stress. Use Value: Low RDS(on) and Qg enable >98.5% efficiency at full load; Kelvin source ensures clean gate waveform under high di/dt. |
Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with 600 V DC bus and 15 kHz PWM. IC Role / Device Role / Timing Role: High-side/low-side switching element in three-phase IGBT/MOSFET inverter; conducts 7 A RMS with 100 A/μs di/dt during commutation. Use Value: Avalanche rating absorbs inductive kickback during short-circuit events; 1.0 °C/W RthJC sustains thermal stability without forced air. |
| Solar PV Inverters | Induction Heating |
|
Use Scenario: DC-link switch in string-level 5 kW photovoltaic inverter with unipolar modulation. IC Role / Device Role / Timing Role: Fast-switching device in H-bridge output stage; switches 480 V DC at 16 kHz with 5.5 A average current. Use Value: Low Co(er) and fast trr = 209 ns minimize dead-time losses and EMI generation in high-frequency transformer-isolated designs. |
Use Scenario: Resonant tank switch in 10 kW domestic induction cooker operating at 20–50 kHz. IC Role / Device Role / Timing Role: Half-bridge switch handling 30 A pulsed current and 600 V blocking; subjected to repetitive UIS events during zero-crossing detection. Use Value: 81 mJ EAS and 100 V/ns dv/dt rating ensure reliable operation under high di/dt and voltage transients without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, RDS(on) = 0.22 Ω, Qg = 27 nC, TO-247 package, no Kelvin source | Larger footprint and higher gate charge increase switching loss in high-frequency PFC; lacks Kelvin source for precision gate control | Preferred where TO-247 mechanical mounting or higher surge current is required; not suitable for ultra-low-loss 200+ kHz designs |
| IXFH30N60X | 600 V, RDS(on) = 0.20 Ω, Qg = 35 nC, TO-247, standard 3-pin configuration | Higher Qg increases gate drive loss and limits max switching frequency; no Co(er) optimization or avalanche rating | Acceptable for lower-frequency (<100 kHz) industrial SMPS where cost outweighs efficiency; requires larger heatsink due to RthJC = 1.5 °C/W |
Compared with STW62N60M2 and IXFH30N60X, SIHH240N60E-T1-GE3 offers superior switching efficiency via lower Qg and Co(er), Kelvin-source noise immunity, and smaller PowerPAK® 8 × 8 footprint-enabling higher power density in space-constrained server and solar inverters.
Availability
SIHH240N60E-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SIHH240N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The E Series Power MOSFET product line targets high-efficiency, high-frequency power conversion in server, telecom, and renewable energy systems-designed to replace older planar devices with trench-based technology delivering lower RDS(on) × Qg and enhanced ruggedness.
FAQ
What is the maximum continuous drain current for SIHH240N60E-T1-GE3 at 100 °C case temperature?
The maximum continuous drain current for SIHH240N60E-T1-GE3 is 7 A when the case temperature is 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHH240N60E-T1-GE3 achieves this rating using its 1.0 °C/W junction-to-case thermal resistance and PowerPAK® 8 × 8 package's efficient heat transfer to the PCB.
Does SIHH240N60E-T1-GE3 support Kelvin source connection, and how does it improve performance?
Yes, SIHH240N60E-T1-GE3 features a dedicated Kelvin source (Pin 2) separate from the main power source (Pin 3). This configuration eliminates the voltage drop across source inductance during high di/dt switching, stabilizing gate drive and preventing false turn-off. In practice, this allows the SIHH240N60E-T1-GE3 to sustain 100 V/ns dv/dt without oscillation-critical for reliable operation in high-frequency PFC and resonant converters.
What is the typical output capacitance (Co(er)) of SIHH240N60E-T1-GE3, and why is it important?
The typical effective output capacitance (energy-related), Co(er), of SIHH240N60E-T1-GE3 is 32 pF. This parameter quantifies the capacitance that stores the same energy as the actual nonlinear Coss during VDS rise from 0 % to 80 % of VDSS. A low Co(er) directly reduces turn-off switching loss-especially beneficial in ZVS topologies like LLC resonant converters where SIHH240N60E-T1-GE3 is commonly deployed.
Is SIHH240N60E-T1-GE3 avalanche-rated, and what is its single-pulse energy rating?
Yes, SIHH240N60E-T1-GE3 is avalanche energy rated per the UIS (unclamped inductive switching) test. Its single-pulse avalanche energy rating is 81 mJ under test conditions of VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 2.4 A. This ruggedness allows the SIHH240N60E-T1-GE3 to safely absorb inductive energy spikes in motor drives, welding equipment, and PFC circuits without external protection components.
What is the gate threshold voltage range for SIHH240N60E-T1-GE3, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for SIHH240N60E-T1-GE3 is specified from 3.0 V to 5.0 V at VDS = VGS and ID = 250 μA. This range confirms standard-level gate drive compatibility-requiring ≥10 V for full enhancement-and ensures stable turn-on behavior across temperature and process variation. For reliable operation, the SIHH240N60E-T1-GE3 must be driven with a minimum of 10 V to achieve its rated RDS(on) of 0.208 Ω.
SIHH240N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 783 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 89W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH240N60E-T1-GE3 FAQ
1.How can I place an order for SIHH240N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH240N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH240N60E-T1-GE3 reliable?
The price and inventory of SIHH240N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH240N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH240N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH240N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH240N60E-T1-GE3?
SIHH240N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH240N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH240N60E-T1-GE3?
For technical support, including SIHH240N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH240N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH240N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH240N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH240N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH240N60E-T1-GE3?
All SIHH240N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH240N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH240N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH240N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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