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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP240N60E-GE3

Name: SIHP240N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP240N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP240N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP240N60E-GE3.pdf

Description:: MOSFET N-CH 600V 12A TO220AB

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Product details

Overview

SIHP240N60E-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.208 Ω (typ.) at V_GS = 10 V, Q_g = 15 nC (typ.), and E_AS = 81 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHP240N60E-GE3 datasheet, SIHP240N60E-GE3 pinout, SIHP240N60E-GE3 application, or SIHP240N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated ruggedness, Co(er) = 33 pF for reduced switching loss, and validated performance at TJ = 150 °C in hard-switched topologies.

Technical Context

This 4th-generation E-series MOSFET employs planar stripe cell structure with optimized gate oxide and charge balancing to achieve low conduction and switching losses simultaneously. Its dynamic parameters - C_iss = 795 pF, C_oss = 49 pF, C_rss = 5 pF - support fast, controllable turn-on/turn-off with minimal Miller effect.

The device integrates a robust body diode with t_rr = 189 ns (typ.) and Q_rr = 1.8 μC (typ.) at IF = 5.5 A, enabling reliable operation in bridge configurations where synchronous rectification isn't used. Thermal resistance R_thJC = 1.6 °C/W ensures efficient heat transfer to heatsinks in high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage in telecom/PFC applications
R_DS(on) (V_GS = 10 V)	0.208 Ω (typ.) - enables ≤1.3 W conduction loss at 5.5 A continuous drain current
Q_g	15 nC (typ.) - reduces gate drive power requirement and improves switching efficiency in 100–300 kHz SMPS
E_AS	81 mJ - provides unclamped inductive switching ruggedness without external snubbers in motor drives or welders
t_r/t_f	14/14 ns (typ.) - supports clean, low-EMI switching edges under R_g = 9.1 Ω drive conditions
T_J range	−55 to +150 °C - qualified for industrial and outdoor power electronics operating in extended ambient environments
Co(er)	33 pF - lowers energy stored in output capacitance (E_oss), reducing turn-off loss in hard-switched converters

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and 1.6 mm creepage/clearance per IEC 60664-1. Thermal pad on drain side enables direct heatsink attachment with thermal interface material.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level gate drive; input capacitance C_iss = 795 pF shapes drive strength requirements
D (Drain)	Main power output terminal	Connected to high-side switching node; electrically tied to metal tab for thermal path and voltage reference
S (Source)	Power return and reference node	Serves as local ground for gate driver; carries full load current and reverse diode conduction during freewheeling

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.13 Ω·nC (0.208 Ω × 15 nC) - directly reduces total switching + conduction loss in high-frequency PFC stages
Avalanche energy rating	E_AS = 81 mJ - eliminates need for external clamping circuits in inductive load switching (e.g., welding inverters)
Body diode softness	Q_rr = 1.8 μC, t_rr = 189 ns - minimizes voltage overshoot and EMI during diode commutation in half-bridge topologies
High dv/dt immunity	70 V/ns (T_J = 125 °C) - prevents false turn-on in noisy high-dV/dt environments like motor drives and solar inverters
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Material Declaration (Doc. #99912)

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW CRPS-compliant AC-DC front-end with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and asymmetrical half-bridge primary switches. Use Value: Low Co(er) and Q_g reduce switching loss at 150–200 kHz, enabling >96 % efficiency while maintaining thermal margin at 50 °C ambient.	Use Scenario: 48 V distributed power architecture rectifier with dual-phase interleaved PFC and forward converter output stage. IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost PFC and synchronous rectifier control FET. Use Value: Rugged UIS rating and 150 °C T_J capability ensure reliability under line surges and sustained overload conditions per GR-1089-CORE.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with MPPT and transformerless H5 topology. IC Role / Device Role / Timing Role: High-side switch in bidirectional DC-DC stage and unidirectional inverter leg. Use Value: 600 V V_DS and 81 mJ E_AS withstand DC-link transients up to 800 V and handle fault currents during anti-islanding shutdown.	Use Scenario: Inverter leg switch in 5–7.5 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: Main IGBT replacement in 6–16 kHz PWM-driven three-phase inverter outputs. Use Value: Body diode Q_rr and t_rr values enable clean freewheeling without external diodes, reducing component count and layout complexity.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW CRPS-compliant AC-DC front-end with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and asymmetrical half-bridge primary switches.

Use Value: Low Co(er) and Q_g reduce switching loss at 150–200 kHz, enabling >96 % efficiency while maintaining thermal margin at 50 °C ambient.

Use Scenario: 48 V distributed power architecture rectifier with dual-phase interleaved PFC and forward converter output stage.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost PFC and synchronous rectifier control FET.

Use Value: Rugged UIS rating and 150 °C T_J capability ensure reliability under line surges and sustained overload conditions per GR-1089-CORE.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with MPPT and transformerless H5 topology.

IC Role / Device Role / Timing Role: High-side switch in bidirectional DC-DC stage and unidirectional inverter leg.

Use Value: 600 V V_DS and 81 mJ E_AS withstand DC-link transients up to 800 V and handle fault currents during anti-islanding shutdown.

Use Scenario: Inverter leg switch in 5–7.5 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Main IGBT replacement in 6–16 kHz PWM-driven three-phase inverter outputs.

Use Value: Body diode Q_rr and t_rr values enable clean freewheeling without external diodes, reducing component count and layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	R_DS(on) = 0.33 Ω (higher), Q_g = 24 nC (higher), no Co(er) spec, E_AS = 50 mJ (lower)	Limited to lower-power (<2 kW) PFC and flyback; less suitable for high-frequency, high-efficiency telecom rectifiers	Prefer SIHP240N60E-GE3 when target efficiency exceeds 95.5 % at 200 kHz or avalanche stress exceeds 50 mJ
IXFH24N60P	R_DS(on) = 0.24 Ω, Q_g = 22 nC, Co(er) not specified, E_AS = 110 mJ (higher), TO-247 package	Better ruggedness but larger footprint and higher gate drive loss; requires PCB redesign for TO-220AB-to-TO-247 swap	Choose SIHP240N60E-GE3 for space-constrained TO-220AB layouts where 0.208 Ω R_DS(on) and 15 nC Q_g deliver superior power density

Compared with STW20NK60Z and IXFH24N60P, SIHP240N60E-GE3 delivers the lowest R_DS(on) × Q_g FOM in TO-220AB, enabling highest efficiency in compact 1–3 kW power supplies without sacrificing avalanche ruggedness or thermal performance.

Availability

SIHP240N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SIHP240N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability qualification.

The SIHP240N60E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switch-mode power conversion in demanding industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for SIHP240N60E-GE3 at 100 °C case temperature?

The SIHP240N60E-GE3 supports 7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within R_thJC = 1.6 °C/W junction-to-case thermal resistance. At T_C = 25 °C, the rating increases to 12 A.

Does SIHP240N60E-GE3 have a fully rated avalanche capability, and what is its test condition?

Yes, SIHP240N60E-GE3 is fully rated for single-pulse avalanche with E_AS = 81 mJ. The test condition is V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.4 A - per note b in the datasheet. This rating validates robustness in inductive switching faults without external protection.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode in SIHP240N60E-GE3?

The typical reverse recovery charge (Q_rr) of the SIHP240N60E-GE3 body diode is 1.8 μC, measured at T_J = 25 °C, I_F = I_S = 5.5 A, di/dt = 100 A/μs, and V_R = 400 V. This value is critical for estimating commutation loss and EMI in non-synchronous rectifier topologies.

Is SIHP240N60E-GE3 compatible with standard TO-220AB footprints and heatsinking methods?

Yes, SIHP240N60E-GE3 uses the industry-standard TO-220AB package with 2.54 mm lead pitch and isolated metal tab. It is mechanically and thermally compatible with standard TO-220 clip-on heatsinks and insulating pads. Mounting torque must not exceed 0.5 N·m to avoid package damage.

How does the effective output capacitance Co(er) benefit switching performance in SIHP240N60E-GE3?

The SIHP240N60E-GE3 specifies Co(er) = 33 pF - an energy-related effective capacitance that accurately models turn-off loss. Compared to standard C_oss = 49 pF, Co(er) reflects real-world energy storage during V_DS rise (0–480 V), enabling more precise loss calculation and improved efficiency prediction in hard-switched converters.

SIHP240N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 240mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 795 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP240N60E-GE3 FAQ

1.How can I place an order for SIHP240N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP240N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP240N60E-GE3 reliable?

The price and inventory of SIHP240N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP240N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP240N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP240N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP240N60E-GE3?

SIHP240N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP240N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP240N60E-GE3?

For technical support, including SIHP240N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP240N60E-GE3 requirements.

6.How does Aetrix verify that SIHP240N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP240N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP240N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP240N60E-GE3?

All SIHP240N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP240N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP240N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP240N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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