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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP22N60AE-BE3

Name: SIHP22N60AE-BE3
Brand: Vishay Siliconix
SKU: SIHP22N60AE-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP22N60AE-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP22N60AE-BE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP22N60AE-BE3 from Vishay Siliconix is a 600 V, 20 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.156 Ω (typ) at V_GS = 10 V, Q_g = 48 nC (typ), and E_AS = 204 mJ avalanche-rated operation - deployed in telecom power supplies and PFC stages.

For engineers reviewing the SIHP22N60AE-BE3 datasheet, SIHP22N60AE-BE3 pinout, SIHP22N60AE-BE3 application, or SIHP22N60AE-BE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 0.7 °C/W), body diode recovery metrics (t_rr = 319 ns), and real-world switching performance under 480 V/11 A conditions.

Technical Context

This MOSFET uses planar stripe silicon technology optimized for high-voltage SMPS topologies. Its low C_iss (1451 pF) and ultra-low Q_gd/Q_g ratio (25/48 nC) reduce Miller-induced turn-off delay and improve hard-switching efficiency in continuous conduction mode (CCM) PFC.

The device integrates an intrinsic fast-recovery body diode with t_rr = 319 ns (typ), Q_rr = 4.9 μC, and dV/dt capability of 31 V/ns - enabling robust operation in bridge-leg configurations without external snubbers in solar inverters and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient spikes in industrial PFC
R_DS(on) typ @ 10 V	0.156 Ω - enables ≤2.5 W conduction loss at 11 A continuous drain current
Q_g max	96 nC - sets minimum gate drive power requirement for 100 kHz switching at 10 V gate swing
E_AS	204 mJ - guarantees single-pulse unclamped inductive switching survival up to I_AS = 3.8 A with L = 28.2 mH
t_rr	319 ns (typ) - limits reverse recovery charge injection and associated shoot-through risk in half-bridge ZVS transitions
R_thJC	0.7 °C/W - allows 179 W power dissipation with ≤125 °C junction rise above 25 °C case temperature
C_iss	1451 pF - determines input impedance and gate drive loop stability in high-frequency gate driver IC interfaces

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting footprint (10.16 mm × 19.05 mm × 4.83 mm), screw-hole compatible for heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; requires <1 Ω series resistance to damp ringing from 0.6 Ω internal R_g
D (Drain)	High-side power terminal	Connected to heatsink via isolated tab; carries full load current and withstands 600 V blocking
S (Source)	Reference node / return path	Forms common reference for gate drive and current sensing; ties to PCB ground plane with low-inductance layout

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	7.46 Ω·nC - improves trade-off between conduction loss and switching loss in 65–100 kHz PFC designs
Avalanche energy rating	204 mJ - eliminates need for external clamping circuits in inductive load switching
Fast body diode recovery	t_rr = 319 ns, Q_rr = 4.9 μC - reduces cross-conduction losses in synchronous rectification and LLC resonant converters
Low C_oss (energy-related)	C_o(er) = 50 pF - minimizes capacitive turn-on loss during zero-voltage switching transitions
Pb-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc#99912)

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3.5 kW front-end AC/DC converter with active PFC stage. IC Role / Device Role / Timing Role: High-side switch in boost PFC cell operating at 70 kHz with 400 V DC link. Use Value: 0.156 Ω R_DS(on) and 48 nC Q_g enable >96.2 % efficiency at full load while maintaining thermal margin below 125 °C junction.	Use Scenario: DC-link switching in string inverter H-bridge output stage feeding 600 V grid interface. IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current with body diode conducting freewheeling current during dead-time. Use Value: 319 ns t_rr and 31 V/ns dV/dt rating prevent false turn-on and ensure clean commutation under 100 A/μs di/dt conditions.
Industrial Motor Drive	LED Streetlight Driver
Use Scenario: Inverter leg switch in 7.5 kW VFD driving induction motor with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter with unclamped inductive load. Use Value: 204 mJ E_AS rating sustains repeated regenerative energy dump without failure during rapid deceleration events.	Use Scenario: Primary switch in 150 W constant-current LED driver using flyback topology with dimming control. IC Role / Device Role / Timing Role: Main power switch cycling at 65 kHz with 400 V reflected output voltage stress. Use Value: 600 V V_DS rating provides 100 % margin over 400 V peak flyback reset voltage, ensuring long-term reliability in outdoor ambient.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3.5 kW front-end AC/DC converter with active PFC stage.

IC Role / Device Role / Timing Role: High-side switch in boost PFC cell operating at 70 kHz with 400 V DC link.

Use Value: 0.156 Ω R_DS(on) and 48 nC Q_g enable >96.2 % efficiency at full load while maintaining thermal margin below 125 °C junction.

Use Scenario: DC-link switching in string inverter H-bridge output stage feeding 600 V grid interface.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current with body diode conducting freewheeling current during dead-time.

Use Value: 319 ns t_rr and 31 V/ns dV/dt rating prevent false turn-on and ensure clean commutation under 100 A/μs di/dt conditions.

Industrial Motor Drive

LED Streetlight Driver

Use Scenario: Inverter leg switch in 7.5 kW VFD driving induction motor with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter with unclamped inductive load.

Use Value: 204 mJ E_AS rating sustains repeated regenerative energy dump without failure during rapid deceleration events.

Use Scenario: Primary switch in 150 W constant-current LED driver using flyback topology with dimming control.

IC Role / Device Role / Timing Role: Main power switch cycling at 65 kHz with 400 V reflected output voltage stress.

Use Value: 600 V V_DS rating provides 100 % margin over 400 V peak flyback reset voltage, ensuring long-term reliability in outdoor ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.19 Ω (typ), Q_g = 52 nC, TO-220FP package (lower PD = 110 W)	Lower power dissipation rating limits use in >1.2 kW continuous conduction mode PFC	Select when space-constrained layouts require smaller footprint and thermal load is ≤100 W
IXTH24N60L2	R_DS(on) = 0.18 Ω (typ), Q_g = 40 nC, TO-247AC package (R_thJC = 0.45 °C/W)	Superior thermal performance but larger footprint; no avalanche rating specified	Select when junction temperature must stay <110 °C under 15 A sustained load and avalanche robustness is secondary

Compared with STP22NM60ND and IXTH24N60L2, SIHP22N60AE-BE3 offers the best balance of low R_DS(on), high avalanche ruggedness, and industry-standard TO-220AB thermal interface - making it optimal for cost-sensitive, thermally demanding 1–5 kW industrial power supplies where reliability under overload is critical.

Availability

SIHP22N60AE-BE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP22N60AE-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHP22N60AE-BE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems where low conduction loss and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHP22N60AE-BE3 at 100 °C case temperature?

The SIHP22N60AE-BE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHP22N60AE-BE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient of 0.72 V/°C.

Does SIHP22N60AE-BE3 have a qualified avalanche rating, and how is it tested?

Yes, SIHP22N60AE-BE3 is fully rated for single-pulse avalanche energy (E_AS) at 204 mJ, tested per JEDEC JESD24-11 with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.8 A. The SIHP22N60AE-BE3 passes this test without parameter degradation, confirming its suitability for inductive switching applications such as PFC and motor drives where voltage transients occur.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP22N60AE-BE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the integral body diode in SIHP22N60AE-BE3 is 319 ns, measured at T_J = 25 °C, I_F = I_S = 11 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is critical for evaluating commutation behavior in half-bridge and synchronous rectifier topologies. The SIHP22N60AE-BE3 also specifies Q_rr = 4.9 μC under identical conditions.

Is SIHP22N60AE-BE3 lead (Pb)-free and halogen-free, and which compliance standard does it meet?

Yes, SIHP22N60AE-BE3 is lead-free and halogen-free, compliant with the EU RoHS Directive 2011/65/EU and Vishay's internal Green Standard (document #99912). The "-BE3" suffix explicitly denotes Pb-free and halogen-free construction per Vishay's material categorization system. The SIHP22N60AE-BE3 undergoes full qualification per J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount reflow compatibility.

What is the gate-source threshold voltage (V_GS(th)) range for SIHP22N60AE-BE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHP22N60AE-BE3 is specified from 2 V to 4 V at I_D = 250 μA, indicating consistent turn-on behavior across production lots. This range ensures reliable enhancement-mode operation with standard 10 V gate drivers while avoiding unintended conduction from noise. The SIHP22N60AE-BE3 requires ≥8 V V_GS to achieve full R_DS(on) specification, so drive circuits must maintain stable rail voltage under load.

SIHP22N60AE-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1451 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP22N60AE-BE3 FAQ

1.How can I place an order for SIHP22N60AE-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP22N60AE-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP22N60AE-BE3 reliable?

The price and inventory of SIHP22N60AE-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP22N60AE-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP22N60AE-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP22N60AE-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP22N60AE-BE3?

SIHP22N60AE-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP22N60AE-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP22N60AE-BE3?

For technical support, including SIHP22N60AE-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP22N60AE-BE3 requirements.

6.How does Aetrix verify that SIHP22N60AE-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP22N60AE-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP22N60AE-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP22N60AE-BE3?

All SIHP22N60AE-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP22N60AE-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP22N60AE-BE3 part is unused and in its original packaging.

Return procedure for SIHP22N60AE-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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