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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFZ48RPBF

Name: IRFZ48RPBF
Brand: Vishay Siliconix
SKU: IRFZ48RPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ48RPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ48RPBF.pdf

Description:: MOSFET N-CH 60V 50A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ48RPBF from Vishay Siliconix is a 60 V, 50 A N-channel power MOSFET in TO-220AB package, featuring 0.018 Ω R_DS(on) at V_GS = 10 V, 110 nC total gate charge, and 175 °C maximum junction temperature - optimized for high-current linear and audio amplifier applications.

For engineers reviewing the IRFZ48RPBF datasheet, IRFZ48RPBF pinout, IRFZ48RPBF application, or IRFZ48RPBF equivalent, key selection criteria include avalanche ruggedness (100 mJ single-pulse), fast switching (8.1 ns turn-on delay), body diode recovery (120–180 ns), thermal resistance (0.8 °C/W j-to-case), and drop-in compatibility with SiHFZ48 in linear designs.

Technical Context

This discrete power MOSFET uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching capability. Its fully avalanche-rated structure supports repetitive 50 A I_AR and 19 mJ E_AR, enabling reliable operation under transient overloads without external snubbers.

The device integrates a fast-recovery body diode (t_rr = 120–180 ns, Q_rr = 0.50–0.80 μC) and exhibits low dynamic capacitances (C_iss = 2400 pF, C_oss = 1300 pF), supporting efficient hard-switching in Class AB and switching-mode power supplies up to ~100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V rail systems and automotive battery-supplied amplifiers.
R_DS(on)	0.018 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 7.5 A DC, critical for thermal management in linear output stages.
Q_g	110 nC - Determines gate drive power requirement; necessitates ≥1 A peak gate driver for sub-100 ns switching transitions.
I_D (continuous)	50 A @ T_C = 25 °C - Sustains high bias currents in audio output devices without derating below 100 °C case temperature.
E_AS	100 mJ - Supports safe single-pulse inductive energy absorption in relay drivers or motor commutation circuits.
T_J max	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without forced cooling.
R_thJC	0.8 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for predictable junction temperature modeling.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole configuration. Mounting screw torque: 1.1 N·m (10 lbf·in). Thermal pad requires electrically insulating but thermally conductive interface material.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	High-impedance input requiring ≤100 nA leakage current; driven by logic-level or dedicated gate driver ICs.
D (Drain)	Main current path anode	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
S (Source)	Main current path cathode / reference node	Common return for load current and gate drive reference; low-inductance layout essential for stable switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.018 Ω enables <1.5 W conduction loss at 9 A RMS - reduces heatsink size in Class AB audio outputs.
Fully avalanche rated	100 mJ single-pulse and 19 mJ repetitive avalanche energy eliminate need for external clamping in inductive loads.
Fast body diode recovery	120–180 ns t_rr with 0.50–0.80 μC Q_rr minimizes cross-conduction losses in half-bridge topologies.
175 °C operating temperature	Supports continuous operation in enclosed industrial drives or automotive under-hood amplifiers without thermal shutdown.
Drop-in replacement for SiHFZ48	Identical pinout and electrical specs enable field upgrades in legacy linear amplifier PCBs without layout changes.

Applications

Audio Power Amplifiers	DC Motor Drivers
Use Scenario: High-fidelity Class AB output stage delivering 50–100 W into 4–8 Ω speakers in pro-audio mixers. IC Role / Device Role / Timing Role: Linear-mode power switch handling continuous 5–10 A output current with minimal thermal drift. Use Value: Low R_DS(on) and 175 °C rating maintain THD <0.1% across ambient temperatures from -25 °C to +70 °C.	Use Scenario: H-bridge driver for 24–48 V brushed DC motors in automated gate operators and conveyor systems. IC Role / Device Role / Timing Role: High-side/low-side switching element controlling bidirectional motor current up to 50 A peak. Use Value: Avalanche ruggedness absorbs inductive kickback during PWM commutation, eliminating external flyback diodes.
Switch-Mode Power Supplies	Industrial Relay Drivers
Use Scenario: Primary-side switch in 300–500 W offline forward or flyback converters operating at 50–100 kHz. IC Role / Device Role / Timing Role: Hard-switched power transistor managing 60 V bus with 72 A pulsed drain current capability. Use Value: Low C_oss (1300 pF) and Q_gd/Q_gs ratio (36/29) support ZVS-assisted efficiency above 85% at full load.	Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC actuators or PLC I/O modules. IC Role / Device Role / Timing Role: Low-impedance load switch interfacing microcontroller GPIO to 24–48 V inductive coils. Use Value: 100 mJ E_AS withstands coil de-energization transients without failure, extending service life beyond mechanical relay equivalents.

Audio Power Amplifiers

DC Motor Drivers

Use Scenario: High-fidelity Class AB output stage delivering 50–100 W into 4–8 Ω speakers in pro-audio mixers.

IC Role / Device Role / Timing Role: Linear-mode power switch handling continuous 5–10 A output current with minimal thermal drift.

Use Value: Low R_DS(on) and 175 °C rating maintain THD <0.1% across ambient temperatures from -25 °C to +70 °C.

Use Scenario: H-bridge driver for 24–48 V brushed DC motors in automated gate operators and conveyor systems.

IC Role / Device Role / Timing Role: High-side/low-side switching element controlling bidirectional motor current up to 50 A peak.

Use Value: Avalanche ruggedness absorbs inductive kickback during PWM commutation, eliminating external flyback diodes.

Switch-Mode Power Supplies

Industrial Relay Drivers

Use Scenario: Primary-side switch in 300–500 W offline forward or flyback converters operating at 50–100 kHz.

IC Role / Device Role / Timing Role: Hard-switched power transistor managing 60 V bus with 72 A pulsed drain current capability.

Use Value: Low C_oss (1300 pF) and Q_gd/Q_gs ratio (36/29) support ZVS-assisted efficiency above 85% at full load.

Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC actuators or PLC I/O modules.

IC Role / Device Role / Timing Role: Low-impedance load switch interfacing microcontroller GPIO to 24–48 V inductive coils.

Use Value: 100 mJ E_AS withstands coil de-energization transients without failure, extending service life beyond mechanical relay equivalents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V, 55 A, R_DS(on) = 0.014 Ω, logic-level gate (V_GS(th) = 1–2.5 V), TO-220FP package	Lower gate threshold enables direct MCU GPIO drive; lower R_DS(on) improves efficiency but increases dI/dt sensitivity	Prefer for 3.3 V control systems; verify layout stability with faster switching edges.
IXTH50N60L2	600 V, 50 A, R_DS(on) = 0.045 Ω, TO-247 package, higher voltage rating	Designed for 400 V DC bus applications; unsuitable for 48 V linear use due to higher on-resistance and cost	Select only when 600 V blocking is required; avoid for audio or low-voltage motor control.

Compared with STP55NF06L and IXTH50N60L2, the IRFZ48RPBF offers optimal balance of low R_DS(on), proven linear-mode stability, and TO-220AB mechanical compatibility - making it preferred for legacy audio amplifier upgrades and 48 V industrial switching where gate drive voltage ≥10 V is available.

Availability

IRFZ48RPBF is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, and industrial relay drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFZ48RPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, headquartered in Malvern, PA, with vertical fabrication capabilities across silicon MOSFETs, diodes, and resistors.

The Vishay Siliconix IRFZ series targets high-reliability linear and switching power applications, emphasizing avalanche ruggedness, thermal stability, and drop-in upgrade paths for legacy industrial and audio designs.

FAQ

What is the maximum continuous drain current rating for IRFZ48RPBF at 100 °C case temperature?

The IRFZ48RPBF maintains a continuous drain current rating of 50 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low R_DS(on), allowing sustained high-current operation without derating in well-heatsinked applications. The IRFZ48RPBF achieves this via a 0.8 °C/W junction-to-case thermal resistance and 175 °C maximum junction temperature rating.

Is IRFZ48RPBF suitable for linear-mode (Class A/AB) amplifier applications?

Yes, the IRFZ48RPBF is explicitly qualified for linear-mode operation, including audio amplifiers. Its datasheet highlights "drop-in replacement of the SiHFZ48 for linear / audio applications" and specifies stable R_DS(on) vs. temperature behavior (Fig. 4). The IRFZ48RPBF's 175 °C T_J max and fully avalanche-rated structure ensure reliability under DC bias and thermal stress typical of Class AB output stages.

Does IRFZ48RPBF have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFZ48RPBF integrates a fast-recovery body diode inherent to its N-channel MOSFET structure. Key parameters include reverse recovery time t_rr = 120–180 ns, reverse recovery charge Q_rr = 0.50–0.80 μC, and peak diode recovery dV/dt = 4.5 V/ns. These values are measured at T_J = 25 °C, I_F = 72 A, and dI/dt = 100 A/μs - confirming suitability for synchronous rectification and half-bridge freewheeling in the IRFZ48RPBF.

What is the gate-source threshold voltage range for IRFZ48RPBF, and how does it affect drive requirements?

The IRFZ48RPBF has a gate-source threshold voltage V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA. This standard-level threshold requires ≥10 V gate drive for full enhancement and minimal R_DS(on). Unlike logic-level MOSFETs, the IRFZ48RPBF is not directly compatible with 3.3 V or 5 V microcontrollers without level-shifting or gate driver amplification - a key design consideration for the IRFZ48RPBF.

How does the avalanche energy rating of IRFZ48RPBF compare between single-pulse and repetitive conditions?

The IRFZ48RPBF is rated for 100 mJ single-pulse avalanche energy (E_AS) and 19 mJ repetitive avalanche energy (E_AR). The difference reflects thermal accumulation limits: E_AS applies to one-time transients (e.g., inductive turn-off spikes), while E_AR assumes periodic events with sufficient cooling between pulses. This dual rating confirms the IRFZ48RPBF's suitability for both infrequent fault protection and cyclic inductive load switching.

IRFZ48RPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ48RPBF FAQ

1.How can I place an order for IRFZ48RPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ48RPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ48RPBF reliable?

The price and inventory of IRFZ48RPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48RPBF is usually 5 days.

3.What payment methods are accepted for IRFZ48RPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48RPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ48RPBF?

IRFZ48RPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ48RPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ48RPBF?

For technical support, including IRFZ48RPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48RPBF requirements.

6.How does Aetrix verify that IRFZ48RPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ48RPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48RPBF meets industry standards.

7.What is the process for return or replacement of IRFZ48RPBF?

All IRFZ48RPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48RPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ48RPBF part is unused and in its original packaging.

Return procedure for IRFZ48RPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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