Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFZ48PBF

Name: IRFZ48PBF
Brand: Vishay Siliconix
SKU: IRFZ48PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFZ48PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ48PBF.pdf

Description:: MOSFET N-CH 60V 50A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:978

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFZ48PBF from Vishay Siliconix is a 60 V, 50 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.018 Ω R_DS(on) at V_GS = 10 V, 110 nC total gate charge, and 175 °C maximum junction temperature-designed for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFZ48PBF datasheet, IRFZ48PBF pinout, IRFZ48PBF application, or IRFZ48PBF equivalent, key selection criteria include avalanche energy rating (100 mJ), thermal resistance (R_thJC = 0.80 °C/W), body diode recovery time (120–180 ns), and fast switching capability with 8.1 ns turn-on delay.

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology to achieve ultra-low on-resistance while maintaining ruggedness against repetitive avalanche stress. Its dynamic dV/dt rating of 4.5 V/ns and unclamped inductive switching capability support reliable operation in hard-switched topologies.

The device integrates a fast, low-Q_rr (0.50–0.80 μC) body diode with 2.0 V forward voltage at 72 A, enabling efficient synchronous rectification and freewheeling in buck and H-bridge circuits without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and automotive 36 V nominal designs
R_DS(on)	0.018 Ω @ V_GS = 10 V - Enables ≤0.4 W conduction loss at 50 A, reducing heatsink requirements
Q_g	110 nC - Dictates gate driver current demand (~1.1 A avg. for 100 ns switching) in high-frequency PWM
E_AS	100 mJ - Supports single-pulse inductive energy absorption without failure in motor control fault conditions
T_J(max)	+175 °C - Allows operation in sealed enclosures or high-ambient industrial environments
trr / Q_rr	120–180 ns / 0.50–0.80 μC - Minimizes reverse recovery losses and EMI in freewheeling paths

Pinout & Package

IRFZ48PBF is housed in a through-hole TO-220AB package with standard three-terminal layout: Drain connected to tab (electrically active), Source and Gate on insulated leads. Thermal path optimized via metal tab mounting to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current sink and heat dissipation surface	Electrically connected to package tab; must be isolated from chassis unless circuit ground reference; primary thermal interface
Source	Reference node for gate drive and current return	Low-inductance return path for load current; ties to power ground or low-side switch node
Gate	Control electrode for channel modulation	High-impedance input requiring <100 nA leakage current; sensitive to ESD and ringing; requires gate resistor for damping

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands 50 A I_AR and 19 mJ E_AR continuously under controlled pulse conditions-enables robust overvoltage protection without snubbers
Ultra low R_DS(on)	0.018 Ω reduces conduction loss by >30% vs. legacy 60 V MOSFETs at same current, improving efficiency in 12–48 V systems
Fast switching with low C_iss/C_oss	2400 pF C_iss, 1300 pF C_oss enable <250 ns rise/fall times at 72 A, supporting >100 kHz SMPS designs
175 °C operating temperature	Extends usable lifetime in thermally constrained applications such as enclosed LED drivers and industrial PLC outputs

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 48 V battery to 12 V logic rail in telecom power supplies. IC Role / Device Role / Timing Role: High-side synchronous switch in continuous conduction mode (CCM) topology. Use Value: Low R_DS(on) limits conduction loss to <0.45 W at 50 A, while fast trr minimizes shoot-through risk during dead-time transitions.	Use Scenario: Half-bridge H-bridge controlling bidirectional 36 V, 40 A brushed motor in automated gate actuator. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode freewheeling. Use Value: 100 mJ E_AS absorbs inductive kickback during PWM off-time; 175 °C rating sustains operation during stall conditions.
UPS Inverter Stage	Solar Charge Controller
Use Scenario: 60 V battery-backed inverter delivering 2 kVA AC output using full-bridge topology. IC Role / Device Role / Timing Role: Main switching transistor handling 50 A peak load current per leg. Use Value: Low thermal resistance (R_thJC = 0.80 °C/W) enables direct heatsink mounting without thermal interface pads, simplifying mechanical design.	Use Scenario: MPPT-based solar charge controller managing 48 V battery bank with up to 50 A charging current. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in buck-boost stage. Use Value: Body diode V_SD = 2.0 V at 72 A ensures minimal voltage drop during light-load freewheeling, preserving battery voltage accuracy.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V battery to 12 V logic rail in telecom power supplies.

IC Role / Device Role / Timing Role: High-side synchronous switch in continuous conduction mode (CCM) topology.

Use Value: Low R_DS(on) limits conduction loss to <0.45 W at 50 A, while fast trr minimizes shoot-through risk during dead-time transitions.

Use Scenario: Half-bridge H-bridge controlling bidirectional 36 V, 40 A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode freewheeling.

Use Value: 100 mJ E_AS absorbs inductive kickback during PWM off-time; 175 °C rating sustains operation during stall conditions.

UPS Inverter Stage

Solar Charge Controller

Use Scenario: 60 V battery-backed inverter delivering 2 kVA AC output using full-bridge topology.

IC Role / Device Role / Timing Role: Main switching transistor handling 50 A peak load current per leg.

Use Value: Low thermal resistance (R_thJC = 0.80 °C/W) enables direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Use Scenario: MPPT-based solar charge controller managing 48 V battery bank with up to 50 A charging current.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in buck-boost stage.

Use Value: Body diode V_SD = 2.0 V at 72 A ensures minimal voltage drop during light-load freewheeling, preserving battery voltage accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V, 55 A, R_DS(on) = 0.014 Ω, logic-level gate (V_GS(th) = 1–2.5 V), TO-220FP package	Lower gate threshold enables direct microcontroller drive; higher current rating but slightly larger die capacitance	Preferred when gate drive voltage is limited to 5 V or lower; verify thermal performance with reduced case-to-sink R_thCS due to FP variant
IXTH50N60L2	600 V, 50 A, R_DS(on) = 0.075 Ω, TO-247 package, higher voltage class	Designed for 400 V DC link applications; not suitable for 48 V systems due to excessive conduction loss	Select only if system requires 600 V blocking; avoid in low-voltage designs where IRFZ48PBF's 0.018 Ω delivers superior efficiency

Compared with STP55NF06L and IXTH50N60L2, the IRFZ48PBF offers optimal balance of low on-resistance, proven avalanche ruggedness, and TO-220AB mechanical compatibility-making it ideal for cost-sensitive, thermally demanding 48 V industrial power stages where gate drive is ≥10 V.

Availability

IRFZ48PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and UPS inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free termination.

Supply support for IRFZ48PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.

The IRFZ48PBF belongs to Vishay's third-generation power MOSFET family engineered for high-current, high-temperature industrial switching-targeting applications where avalanche capability, low R_DS(on), and ease of paralleling are critical.

FAQ

What is the maximum continuous drain current rating for IRFZ48PBF at 100 °C case temperature?

The IRFZ48PBF supports 50 A continuous drain current at both 25 °C and 100 °C case temperature, as specified in its Absolute Maximum Ratings table. This flat derating curve reflects its low thermal resistance (R_thJC = 0.80 °C/W) and robust silicon design, allowing sustained high-current operation without linear power reduction up to 100 °C TC.

Does IRFZ48PBF have a built-in body diode, and what are its key parameters?

Yes, the IRFZ48PBF integrates a fast-recovery body diode with 2.0 V forward voltage at 72 A and 25 °C, reverse recovery time of 120–180 ns, and reverse recovery charge of 0.50–0.80 μC. These values are measured under standardized conditions (T_J = 25 °C, I_F = 72 A, dI/dt = 100 A/μs) and enable efficient freewheeling in buck and half-bridge topologies without external diodes.

Is IRFZ48PBF suitable for avalanche operation, and what are its energy ratings?

Yes, the IRFZ48PBF is explicitly repetitive avalanche rated. It supports 50 A repetitive avalanche current (I_AR) and 19 mJ repetitive avalanche energy (E_AR), plus 100 mJ single-pulse avalanche energy (E_AS). These ratings are validated per Vishay's unclamped inductive test method (Fig. 12), making IRFZ48PBF appropriate for inductive load switching where voltage transients exceed V_DS.

What is the gate threshold voltage range for IRFZ48PBF, and how does it affect drive requirements?

The IRFZ48PBF has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This standard-level gate requires ≥10 V drive for full enhancement (R_DS(on) = 0.018 Ω), meaning it is not logic-level compatible. A 12 V gate driver with adequate current sourcing (>1 A peak) is recommended to ensure fast, low-loss switching.

How does the thermal resistance of IRFZ48PBF compare to similar TO-220 MOSFETs, and what does that mean for heatsinking?

The IRFZ48PBF features a maximum junction-to-case thermal resistance (R_thJC) of 0.80 °C/W-among the lowest in the TO-220AB category. This allows 190 W power dissipation at 25 °C case temperature with only 152 °C junction rise, significantly reducing heatsink size versus typical 1.2–1.5 °C/W competitors. Proper mounting torque (1.1 N·m) and thermal grease are essential to realize this performance.

IRFZ48PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ48PBF FAQ

1.How can I place an order for IRFZ48PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ48PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ48PBF reliable?

The price and inventory of IRFZ48PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48PBF is usually 5 days.

3.What payment methods are accepted for IRFZ48PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ48PBF?

IRFZ48PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ48PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ48PBF?

For technical support, including IRFZ48PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48PBF requirements.

6.How does Aetrix verify that IRFZ48PBF is sourced from the original manufacturer or authorized distributors?

All IRFZ48PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48PBF meets industry standards.

7.What is the process for return or replacement of IRFZ48PBF?

All IRFZ48PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ48PBF part is unused and in its original packaging.

Return procedure for IRFZ48PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …