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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF740ASTRLPBF

Name: IRF740ASTRLPBF
Brand: Vishay Siliconix
SKU: IRF740ASTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF740ASTRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF740ASTRLPBF.pdf

Description:: MOSFET N-CH 400V 10A D2PAK

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Product details

Overview

IRF740ASTRLPBF from Vishay Siliconix is a 400 V, 10 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in SMPS and UPS systems. It delivers R_DS(on) = 0.55 Ω at V_GS = 10 V, Q_g = 36 nC, and supports unclamped inductive avalanche energy up to 630 mJ - enabling robust operation in flyback and forward converter topologies.

For engineers reviewing the IRF740ASTRLPBF datasheet, IRF740ASTRLPBF pinout, IRF740ASTRLPBF application, or IRF740ASTRLPBF equivalent, key selection criteria include its 400 V V_DS, 1.0 °C/W R_thJC, body diode t_rr = 240–360 ns, dV/dt ruggedness of 5.9 V/ns, and RoHS-compliant lead-free/halogen-free construction per Vishay S21-0901-Rev. D.

Technical Context

This device employs planar stripe DMOS technology with fully characterized avalanche performance and dynamic dV/dt ruggedness. Its gate charge profile (Q_gs = 9.9 nC, Q_gd = 16 nC) enables predictable turn-on/turn-off timing in hard-switched converters operating up to 200 V bus voltage.

The integrated body diode exhibits V_SD = 2.0 V at I_S = 10 A and controlled reverse recovery (Q_rr = 1.9–2.9 μC), supporting synchronous rectification and freewheeling functions without external diode supplementation in medium-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports 320 V DC bus designs with 25 % margin for voltage transients in offline SMPS.
R_DS(on)	0.55 Ω @ V_GS = 10 V - limits conduction loss to ≤5.5 W at 10 A continuous drain current.
Q_g	36 nC - determines gate drive power requirement; compatible with standard 10 Ω gate resistors for <35 ns rise time.
E_AS	630 mJ - enables reliable unclamped inductive switching in transformer reset circuits without snubbers.
R_thJC	1.0 °C/W - allows 125 W power dissipation with 125 °C junction-to-case ΔT under heatsink mounting.
t_rr	240–360 ns - defines minimum dead-time requirements in half-bridge configurations to prevent shoot-through.
dV/dt	5.9 V/ns - ensures immunity to parasitic turn-on during high-slew-rate switching transitions.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold V_GS(th) = 2.0–4.0 V ensures compatibility with standard PWM controllers.
D (Drain)	High-side switch node	Connected to primary winding or DC bus; rated for 400 V repetitive blocking and 630 mJ single-pulse avalanche.
S (Source)	Power return / reference	Serves as common return path for load current and gate drive reference; ties to PCB ground plane for low-inductance layout.

Key Features

Feature	Design Value
Low Q_g (36 nC)	Reduces gate driver power loss and simplifies drive circuit design for 100–500 kHz SMPS operation.
Fully characterized C_oss eff. (61 pF)	Enables accurate soft-switching analysis and snubberless ZVS implementation in resonant topologies.
Avalanche-rated (E_AS = 630 mJ)	Eliminates need for external clamping circuits in single-transistor flyback and forward converter transformer reset.
Body diode t_rr & Q_rr specified	Supports reliable freewheeling in discontinuous conduction mode (DCM) without unpredictable reverse recovery oscillation.
RoHS-compliant & halogen-free	Meets IPC-1752A material declaration requirements for industrial and telecom equipment compliance.

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 100–500 W offline flyback converter with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates in discontinuous conduction mode with 65–130 kHz switching frequency. Use Value: 400 V V_DS rating accommodates reflected output voltage plus leakage spike; 630 mJ E_AS withstands transformer reset stress without snubber.	Use Scenario: Inverter stage switch in line-interactive UPS delivering 500–1000 VA output with battery backup. IC Role / Device Role / Timing Role: Half-bridge high-side switch converting 24–48 V DC battery voltage to 120/230 VAC square-wave or modified sine-wave output. Use Value: 10 A continuous ID and 1.0 °C/W R_thJC enable compact heatsinking; dV/dt ruggedness prevents false triggering during fast AC zero-crossing transitions.
High-Speed Power Switching	Industrial Motor Drive Stage
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules switching 24–48 V DC loads up to 8 A. IC Role / Device Role / Timing Role: Low-duty-cycle, high-reliability power switch activated by microcontroller GPIO with optocoupler isolation. Use Value: 0.55 Ω R_DS(on) minimizes on-state heating at 8 A; 100 % UIS tested ensures long-term reliability under inductive load switching.	Use Scenario: Brake chopper switch in 3-phase AC motor drive controlling regenerative braking energy dissipation into DC bus resistor. IC Role / Device Role / Timing Role: Fast-turnoff switch triggered by drive IC during overvoltage events on DC link capacitor. Use Value: 36 nC Q_g enables sub-100 ns turn-off critical for limiting DC bus overvoltage; avalanche rating absorbs stored inductive energy safely.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 100–500 W offline flyback converter with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates in discontinuous conduction mode with 65–130 kHz switching frequency.

Use Value: 400 V V_DS rating accommodates reflected output voltage plus leakage spike; 630 mJ E_AS withstands transformer reset stress without snubber.

Use Scenario: Inverter stage switch in line-interactive UPS delivering 500–1000 VA output with battery backup.

IC Role / Device Role / Timing Role: Half-bridge high-side switch converting 24–48 V DC battery voltage to 120/230 VAC square-wave or modified sine-wave output.

Use Value: 10 A continuous ID and 1.0 °C/W R_thJC enable compact heatsinking; dV/dt ruggedness prevents false triggering during fast AC zero-crossing transitions.

High-Speed Power Switching

Industrial Motor Drive Stage

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules switching 24–48 V DC loads up to 8 A.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-reliability power switch activated by microcontroller GPIO with optocoupler isolation.

Use Value: 0.55 Ω R_DS(on) minimizes on-state heating at 8 A; 100 % UIS tested ensures long-term reliability under inductive load switching.

Use Scenario: Brake chopper switch in 3-phase AC motor drive controlling regenerative braking energy dissipation into DC bus resistor.

IC Role / Device Role / Timing Role: Fast-turnoff switch triggered by drive IC during overvoltage events on DC link capacitor.

Use Value: 36 nC Q_g enables sub-100 ns turn-off critical for limiting DC bus overvoltage; avalanche rating absorbs stored inductive energy safely.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 4 A I_D, 1.6 Ω R_DS(on), TO-220FP package	Lower current rating and higher on-resistance; requires larger heatsink at same power level	Select when higher voltage margin (500 V) is prioritized over conduction loss and surface-mount assembly.
IXTP10N50D2	500 V V_DS, 10 A I_D, 0.65 Ω R_DS(on), TO-220 package, enhanced dV/dt immunity	Through-hole mounting only; slightly higher R_DS(on) but superior dynamic ruggedness	Choose for legacy through-hole designs where board space permits and enhanced noise immunity is required.

Compared with STP4NK50ZFP and IXTP10N50D2, IRF740ASTRLPBF offers optimal balance of 400 V rating, 0.55 Ω conduction resistance, D2PAK surface-mount form factor, and proven 630 mJ avalanche capability - making it preferred for space-constrained, medium-power SMPS and UPS primary switches requiring production-ready reliability.

Availability

IRF740ASTRLPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed industrial switching applications requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for IRF740ASTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The IRF740AS family was designed specifically for high-voltage, medium-current power conversion in offline SMPS and UPS systems - emphasizing avalanche robustness, low gate charge, and repeatable dynamic performance across temperature.

FAQ

What is the maximum continuous drain current for IRF740ASTRLPBF at 100 °C case temperature?

The maximum continuous drain current for IRF740ASTRLPBF is 6.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be verified against actual PCB copper area and heatsinking in the target application layout. IRF740ASTRLPBF maintains safe operation within this limit when R_thJC = 1.0 °C/W is achieved.

Does IRF740ASTRLPBF have a fully specified body diode recovery characteristic?

Yes, IRF740ASTRLPBF includes fully characterized body diode parameters: reverse recovery time t_rr = 240–360 ns, reverse recovery charge Q_rr = 1.9–2.9 μC, and forward voltage V_SD = 2.0 V at I_S = 10 A and T_J = 25 °C. These values are measured under standardized conditions (I_F = 10 A, dI/dt = 100 A/μs) and are essential for designing dead-time control in bridge configurations. IRF740ASTRLPBF's diode data supports reliable freewheeling in DCM flyback and forward converters.

Is IRF740ASTRLPBF suitable for use in avalanche-mode switching circuits?

Yes, IRF740ASTRLPBF is explicitly rated for unclamped inductive switching with single-pulse avalanche energy E_AS = 630 mJ and repetitive avalanche energy E_AR = 12.5 mJ. These ratings are validated per JEDEC JESD24-1 and apply under defined test conditions (L = 12.6 mH, I_AS = 10 A, T_J initial = 25 °C). IRF740ASTRLPBF is routinely deployed in transformer-reset topologies where avalanche operation is intentional and controlled.

What is the gate threshold voltage range for IRF740ASTRLPBF?

The gate-source threshold voltage V_GS(th) for IRF740ASTRLPBF is specified as 2.0 V minimum to 4.0 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures consistent turn-on behavior across process variation and temperature, supporting compatibility with standard 5 V or 10 V gate drivers. IRF740ASTRLPBF achieves full enhancement above 4.0 V, with R_DS(on) guaranteed at V_GS = 10 V.

Can IRF740ASTRLPBF be used in surface-mount designs without thermal vias?

IRF740ASTRLPBF requires thermal management via the exposed drain pad, and while minimal thermal vias may suffice for low-duty-cycle operation, Vishay recommends ≥4 thermal vias (0.3 mm diameter, filled or plated) connecting the drain pad to inner-layer or backside copper planes for continuous 10 A operation. The D2PAK package relies on PCB copper area for heat dissipation, and omitting thermal vias risks exceeding T_J(max) = 150 °C. IRF740ASTRLPBF's R_thJA = 40 °C/W assumes 1"² FR-4 PCB mounting - actual thermal performance must be validated per layout.

IRF740ASTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1030 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF740ASTRLPBF FAQ

1.How can I place an order for IRF740ASTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740ASTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740ASTRLPBF reliable?

The price and inventory of IRF740ASTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740ASTRLPBF is usually 5 days.

3.What payment methods are accepted for IRF740ASTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740ASTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740ASTRLPBF?

IRF740ASTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740ASTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740ASTRLPBF?

For technical support, including IRF740ASTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740ASTRLPBF requirements.

6.How does Aetrix verify that IRF740ASTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF740ASTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740ASTRLPBF meets industry standards.

7.What is the process for return or replacement of IRF740ASTRLPBF?

All IRF740ASTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF740ASTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740ASTRLPBF part is unused and in its original packaging.

Return procedure for IRF740ASTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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