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Vishay Siliconix IRF740ALPBF

Part No.:
IRF740ALPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRF740ALPBF.pdf
Description:
MOSFET N-CH 400V 10A I2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:615

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Product details

Overview

IRF740ALPBF from Vishay Siliconix is a 400 V, 10 A, N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in SMPS and UPS systems with RDS(on) = 0.55 Ω at VGS = 10 V, Qg = 36 nC, and avalanche-rated EAS = 630 mJ.

For engineers reviewing the IRF740ALPBF datasheet, IRF740ALPBF pinout, IRF740ALPBF application, or IRF740ALPBF equivalent, this page delivers verified electrical specs, thermal derating data, body diode recovery metrics (trr = 240–360 ns), and real-world SMPS topology compatibility - all critical for flyback/forward converter design and ruggedized industrial power stages.

Technical Context

This device employs planar vertical DMOS technology with fully characterized avalanche capability and dynamic dV/dt ruggedness up to 5.9 V/ns. Its gate charge profile (Qgs = 9.9 nC, Qgd = 16 nC) supports efficient hard-switching in 100–500 kHz SMPS topologies.

The integrated body diode exhibits VSD = 2.0 V at IS = 10 A and Qrr = 1.9–2.9 μC, enabling reliable unclamped inductive switching. Thermal resistance RthJC = 1.0 °C/W ensures effective junction-to-case heat transfer under continuous 6.3 A operation at TC = 100 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS400 V - Supports primary-side switching in universal-input (85–265 VAC) SMPS with ≥2× voltage margin
RDS(on)0.55 Ω @ VGS = 10 V - Enables <1.1 W conduction loss at 10 A DC, suitable for medium-power converters
Qg36 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers
EAS630 mJ - Single-pulse avalanche energy rating allows safe operation during transient overloads without snubbers
trr240–360 ns - Fast body diode recovery minimizes switching losses in synchronous rectification and freewheeling paths
RthJC1.0 °C/W - Enables 125 W max power dissipation at TJ = 150 °C with adequate heatsinking
ID (TC = 100 °C)6.3 A - Continuous current derating confirms stable operation in enclosed industrial enclosures

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control electrodeAccepts 10 V logic-level drive; threshold VGS(th) = 2.0–4.0 V enables compatibility with standard PWM controllers
D (Drain)High-voltage output terminalConnected to transformer primary or bus rail; rated for 400 V blocking and 40 A pulsed current
S (Source)Reference node / return pathServes as current-sense reference and gate drive return; ties to power ground in low-side switch configurations

Key Features

FeatureDesign Value
Low Qg (36 nC)Reduces gate driver power consumption and enables higher-frequency operation without excessive drive losses
Fully characterized Coss eff. (61 pF)Enables accurate soft-switching timing prediction and resonant circuit modeling in LLC designs
Avalanche-rated (EAS = 630 mJ)Eliminates need for external clamping circuits in flyback transformer reset and inductive load switching
Improved dV/dt ruggedness (5.9 V/ns)Prevents false turn-on in high-noise environments such as motor drives and industrial inverters
RoHS-compliant, halogen-freeMeets IPC-1752A material declaration requirements for automotive and industrial end-equipment compliance

Applications

Switch Mode Power Supply (SMPS)Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in single-transistor flyback converter for 100–300 W AC/DC adapters and industrial power supplies.

IC Role / Device Role: High-voltage power switch controlling energy transfer from input bus to isolated secondary winding.

Use Value: 400 V VDS rating and 630 mJ EAS ensure reliable operation during line surges and transformer reset transients without snubber networks.

Use Scenario: Inverter-stage switching device in online double-conversion UPS systems delivering clean 230 VAC output.

IC Role / Device Role: DC-link switch modulating battery-derived DC into regulated sinusoidal AC via H-bridge or half-bridge topology.

Use Value: 6.3 A continuous current at 100 °C case temperature supports sustained 1 kVA output with forced-air cooling and thermal margin.

High-Speed Power SwitchingIndustrial Motor Control

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules switching 24–48 VDC loads.

IC Role / Device Role: Low-side load switch providing fast, isolated on/off control of solenoids, valves, and indicator banks.

Use Value: 36 nC Qg and 22 ns fall time enable sub-microsecond switching transitions, reducing dwell-time losses in cyclic duty applications.

Use Scenario: Brake chopper switch in servo amplifier regenerative braking circuits dissipating excess kinetic energy.

IC Role / Device Role: Energy-dump switch connecting motor back-EMF to braking resistor during deceleration.

Use Value: Avalanche energy rating (630 mJ) and 10 A repetitive avalanche current (IAR) allow repeated safe energy absorption without derating or external protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP4NK50ZFP500 V VDS, 4 A ID, RDS(on) = 1.4 Ω, TO-220FP packageLower current rating and higher RDS(on); suited for lower-power (<100 W), through-hole designsChoose when board space permits through-hole mounting and system power is ≤60 W with 500 V margin required
IXTP4N50D2500 V VDS, 4 A ID, RDS(on) = 1.2 Ω, TO-220 package, enhanced dV/dt immunityHigher voltage rating but lower current and thermal performance; lacks D2PAK thermal interfacePrefer for legacy through-hole layouts where 500 V standoff is mandatory and peak current remains <4 A

Compared with STP4NK50ZFP and IXTP4N50D2, the IRF740ALPBF delivers 2.5× higher continuous current (6.3 A vs. ≤4 A), 2.5× lower RDS(on), and superior thermal management via D2PAK's low RthJC = 1.0 °C/W - making it optimal for compact, high-efficiency 100–300 W industrial power stages requiring surface-mount reliability.

Availability

IRF740ALPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed industrial switching applications requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRF740ALPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF740ALPBF belongs to Vishay's high-voltage planar MOSFET product line, engineered for robustness in demanding power conversion applications including offline SMPS, UPS inverters, and motor control choppers - emphasizing avalanche survivability, dV/dt immunity, and thermal stability.

FAQ

What is the maximum continuous drain current for IRF740ALPBF at 100 °C case temperature?

The IRF740ALPBF supports a continuous drain current of 6.3 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 10 A at 25 °C using the 1.0 W/°C factor, and assumes proper PCB copper area per Vishay's recommended D2PAK pad layout. The IRF740ALPBF must be mounted on ≥1 in² FR-4 copper to achieve this rating.

Does IRF740ALPBF have avalanche capability, and how is it rated?

Yes, the IRF740ALPBF is fully rated for repetitive and single-pulse avalanche operation. It specifies 630 mJ single-pulse avalanche energy (EAS) and 12.5 mJ repetitive avalanche energy (EAR) under defined test conditions (L = 12.6 mH, IAS = 10 A). These values are measured per JEDEC standards and confirm the IRF740ALPBF can safely absorb inductive energy without failure in flyback or forward converter reset phases.

What is the gate threshold voltage range for IRF740ALPBF, and how does it affect drive requirements?

The IRF740ALPBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. This indicates it is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. The IRF740ALPBF is not a logic-level device; driving it below 8 V risks incomplete turn-on and excessive RDS(on), so PWM controllers with ≥12 V gate drive capability are recommended for reliable operation.

How does the body diode performance of IRF740ALPBF impact its use in freewheeling applications?

IRF740ALPBF features a fast intrinsic body diode with reverse recovery time trr = 240–360 ns and Qrr = 1.9–2.9 μC at TJ = 25 °C. This enables efficient freewheeling in non-synchronous buck or flyback topologies, though its VSD = 2.0 V at 10 A implies ~20 W conduction loss if used continuously. For high-efficiency designs, the IRF740ALPBF should be paired with an external Schottky diode or operated in synchronous mode where possible.

Is IRF740ALPBF RoHS-compliant and halogen-free?

Yes, IRF740ALPBF is both RoHS-compliant and halogen-free, as confirmed by Vishay's material categorization documentation (www.vishay.com/doc?99912) and ordering code suffix "PbF". The device uses lead-free terminations and meets JEDEC J-STD-609A Class 1 moisture sensitivity level (MSL-1), allowing unlimited floor life and standard reflow profiles without baking.

IRF740ALPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1030 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK

IRF740ALPBF FAQ

1.How can I place an order for IRF740ALPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740ALPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740ALPBF reliable?

The price and inventory of IRF740ALPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740ALPBF is usually 5 days.

3.What payment methods are accepted for IRF740ALPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740ALPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740ALPBF?

IRF740ALPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740ALPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740ALPBF?

For technical support, including IRF740ALPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740ALPBF requirements.

6.How does Aetrix verify that IRF740ALPBF is sourced from the original manufacturer or authorized distributors?

All IRF740ALPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740ALPBF meets industry standards.

7.What is the process for return or replacement of IRF740ALPBF?

All IRF740ALPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF740ALPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740ALPBF part is unused and in its original packaging.

Return procedure for IRF740ALPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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