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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z34STRRPBF

Name: IRF9Z34STRRPBF
Brand: Vishay Siliconix
SKU: IRF9Z34STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z34STRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z34STRRPBF.pdf

Description:: MOSFET P-CH 60V 18A D2PAK

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Product details

Overview

IRF9Z34STRRPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V drain-source voltage, 18 A continuous drain current at 25 °C, 0.14 Ω R_DS(on) at V_GS = -10 V, and fully avalanche-rated for robust high-side switching in DC-DC converters and motor control circuits.

For engineers reviewing the IRF9Z34STRRPBF datasheet, IRF9Z34STRRPBF pinout, IRF9Z34STRRPBF application, or IRF9Z34STRRPBF equivalent, key selection criteria include its -60 V V_DS, 175 °C operating junction temperature, fast 18 ns turn-on delay, 120 ns rise time, and D2PAK thermal performance enabling high-current, surface-mount power switching without heatsink in moderate-duty applications.

Technical Context

This device uses third-generation silicon processing to achieve low on-resistance per die area while maintaining rugged avalanche capability. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V gate drive and compatibility with logic-level controllers when paired with appropriate level shifting.

The integrated body diode supports synchronous rectification and freewheeling functions, with 100–200 ns reverse recovery time and 280–520 nC Q_rr under specified test conditions. Thermal resistance of 1.7 °C/W (junction-to-case) enables 88 W power dissipation at T_C = 25 °C, making it suitable for thermally constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switch configurations in 48 V industrial systems.
R_DS(on) @ V_GS = -10 V	0.14 Ω - Enables <1.5 W conduction loss at 11 A DC, critical for efficiency in battery-powered loads.
I_D Continuous @ T_C = 25 °C	-18 A - Supports high-current load switching in motor drivers and power supplies without external heatsinking.
Q_g Total Gate Charge	34 nC - Determines gate driver power requirement; compatible with standard 1-A peak gate drivers.
E_AS Single-Pulse Avalanche Energy	370 mJ - Provides robustness against inductive switching transients in relay or solenoid drive circuits.
T_J Operating Range	-55 to +175 °C - Allows operation in under-hood automotive or industrial environments without derating.
R_thJC	1.7 °C/W - Enables direct thermal coupling to copper pour or heatsink for sustained high-power operation.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S) with drain connected to the large metal pad on the underside.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives negative gate drive relative to source; threshold range (-2.0 to -4.0 V) ensures clean turn-on with -10 V logic.
Drain (D)	High-side power output	Connected to exposed metal tab; must be soldered to large copper area for thermal management and current conduction.
Source (S)	Reference node	Common return path for load current; ties to system ground or floating rail depending on high-side vs. low-side topology.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without bootstrap circuitry-simplifies gate drive design in buck regulators and load switches.
Fully avalanche rated	Guarantees survivability during unclamped inductive turn-off events up to 370 mJ, eliminating need for external snubbers in many cases.
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments where thermal margin is limited.
Fast switching (18 ns t_d(on), 58 ns t_f)	Reduces switching losses in PWM applications above 50 kHz, improving efficiency in compact SMPS designs.
D2PAK package with low R_thJC	Delivers 88 W power dissipation at case temperature of 25 °C-enables higher power density than SO-8 or TO-220 alternatives.

Applications

DC-DC Buck Converter High-Side Switch	Industrial Motor Control H-Bridge
Use Scenario: Used as high-side switch in non-synchronous buck converter supplying 12 V to microcontroller subsystems from 48 V bus. IC Role / Device Role / Timing Role: Power MOSFET performing controlled power delivery; operates in hard-switched PWM mode at 200 kHz. Use Value: Low R_DS(on) minimizes conduction loss; avalanche rating absorbs leakage inductance spikes during turn-off without external clamp.	Use Scenario: Integrated into half-bridge leg of 24 V brushed DC motor driver for factory automation actuators. IC Role / Device Role / Timing Role: High-side P-channel switch enabling bidirectional control with complementary N-channel low-side devices. Use Value: Eliminates need for high-side gate driver ICs; -60 V rating accommodates back-EMF and supply transients up to ±50 V.
Automotive Load Disconnect Switch	UPS Battery Backup Selector
Use Scenario: Controls power to infotainment module in 12 V vehicle system, activated via microcontroller GPIO. IC Role / Device Role / Timing Role: Load switch providing overcurrent and thermal protection via external monitoring; operates in linear or saturated mode. Use Value: 175 °C rating ensures reliability under hood temperatures; -100 μA I_DSS prevents battery drain during sleep mode.	Use Scenario: Selects between main AC/DC supply and backup battery in 24 V telecom UPS, requiring seamless switchover. IC Role / Device Role / Timing Role: OR-ing FET managing power path; body diode provides fail-safe conduction if gate drive fails. Use Value: Low V_SD (-6.3 V at -18 A) reduces forward drop versus Schottky solutions; Q_rr optimized for minimal reverse recovery loss during switchover.

DC-DC Buck Converter High-Side Switch

Industrial Motor Control H-Bridge

Use Scenario: Used as high-side switch in non-synchronous buck converter supplying 12 V to microcontroller subsystems from 48 V bus.

IC Role / Device Role / Timing Role: Power MOSFET performing controlled power delivery; operates in hard-switched PWM mode at 200 kHz.

Use Value: Low R_DS(on) minimizes conduction loss; avalanche rating absorbs leakage inductance spikes during turn-off without external clamp.

Use Scenario: Integrated into half-bridge leg of 24 V brushed DC motor driver for factory automation actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling bidirectional control with complementary N-channel low-side devices.

Use Value: Eliminates need for high-side gate driver ICs; -60 V rating accommodates back-EMF and supply transients up to ±50 V.

Automotive Load Disconnect Switch

UPS Battery Backup Selector

Use Scenario: Controls power to infotainment module in 12 V vehicle system, activated via microcontroller GPIO.

IC Role / Device Role / Timing Role: Load switch providing overcurrent and thermal protection via external monitoring; operates in linear or saturated mode.

Use Value: 175 °C rating ensures reliability under hood temperatures; -100 μA I_DSS prevents battery drain during sleep mode.

Use Scenario: Selects between main AC/DC supply and backup battery in 24 V telecom UPS, requiring seamless switchover.

IC Role / Device Role / Timing Role: OR-ing FET managing power path; body diode provides fail-safe conduction if gate drive fails.

Use Value: Low V_SD (-6.3 V at -18 A) reduces forward drop versus Schottky solutions; Q_rr optimized for minimal reverse recovery loss during switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NPBF	Same silicon die but TO-220 package; R_thJA = 62 °C/W vs. 40 °C/W for D2PAK; no exposed drain pad.	Requires heatsink for >5 A continuous operation; unsuitable for space-constrained SMT-only designs.	Select IRF9Z34NPBF only when through-hole assembly and mechanical mounting flexibility are prioritized over thermal density.
SiHF9Z34STRR-GE3	Identical electrical specs and D2PAK package; RoHS-compliant, halogen-free, with green molding compound.	No functional difference; meets stricter environmental compliance for EU/Asia export markets.	Choose SiHF9Z34STRR-GE3 when RoHS/halogen-free certification is mandatory; otherwise IRF9Z34STRRPBF remains functionally identical.

Compared with IRF9Z34NPBF, IRF9Z34STRRPBF delivers superior thermal performance in SMT layouts, while SiHF9Z34STRR-GE3 offers identical functionality with enhanced environmental compliance-making IRF9Z34STRRPBF optimal for cost-sensitive, high-power-density industrial designs where legacy Pb-free exemption applies.

Availability

IRF9Z34STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and automotive load switches requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF9Z34STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRF9Z34S family was engineered for high-efficiency, high-current surface-mount power switching-targeting applications where thermal density, avalanche ruggedness, and gate drive simplicity are critical design constraints.

FAQ

What is the maximum continuous drain current for IRF9Z34STRRPBF at 100 °C case temperature?

The IRF9Z34STRRPBF supports -13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be verified against actual PCB layout and ambient conditions using the 0.59 W/°C linear derating factor beyond 25 °C.

Does IRF9Z34STRRPBF have a built-in body diode, and what are its key parameters?

Yes, IRF9Z34STRRPBF integrates a body diode with typical forward voltage of -6.3 V at -18 A and 25 °C, reverse recovery time of 100–200 ns, and reverse recovery charge of 280–520 nC. These values are measured under standardized conditions (T_J = 25 °C, I_F = -18 A, dI/dt = 100 A/μs) and define its freewheeling capability in inductive switching applications.

Is IRF9Z34STRRPBF suitable for logic-level gate drive without additional level shifting?

No-IRF9Z34STRRPBF requires V_GS ≤ -10 V for full enhancement and low R_DS(on); its gate threshold range (-2.0 to -4.0 V) means 3.3 V or 5 V logic signals cannot reliably turn it on. A dedicated negative gate driver or level-shifting circuit is required to generate sufficient negative gate-source voltage for robust operation.

What is the avalanche energy rating of IRF9Z34STRRPBF, and how is it tested?

The IRF9Z34STRRPBF is rated for 370 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = -25 V, starting T_J = 25 °C, L = 1.3 mH, R_g = 25 Ω, and I_AS = -18 A. This rating confirms its ability to absorb inductive energy without failure during unclamped inductive switching events common in relay and motor drive circuits.

How does the D2PAK package of IRF9Z34STRRPBF compare thermally to TO-220 variants?

The D2PAK package of IRF9Z34STRRPBF achieves R_thJC = 1.7 °C/W, significantly lower than TO-220's typical ~2.5 °C/W, due to its larger copper drain tab and optimized internal construction. This allows IRF9Z34STRRPBF to dissipate 88 W at T_C = 25 °C versus ~50 W for TO-220 equivalents-enabling higher power density in surface-mount designs.

IRF9Z34STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z34STRRPBF FAQ

1.How can I place an order for IRF9Z34STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z34STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z34STRRPBF reliable?

The price and inventory of IRF9Z34STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z34STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF9Z34STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z34STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z34STRRPBF?

IRF9Z34STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z34STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z34STRRPBF?

For technical support, including IRF9Z34STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z34STRRPBF requirements.

6.How does Aetrix verify that IRF9Z34STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9Z34STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z34STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF9Z34STRRPBF?

All IRF9Z34STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z34STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z34STRRPBF part is unused and in its original packaging.

Return procedure for IRF9Z34STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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