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Vishay Siliconix IRF640STRRPBF
- Part No.:
- IRF640STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF640STRRPBF.pdf
- Description:
- MOSFET N-CH 200V 18A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:1,458
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Product details
Overview
IRF640STRRPBF from Vishay Siliconix is a 200 V, 18 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.18 Ω RDS(on) at VGS = 10 V, 70 nC total gate charge, and full avalanche rating - designed for high-current DC-DC converters, motor drives, and industrial switch-mode power supplies.
For engineers reviewing the IRF640STRRPBF datasheet, IRF640STRRPBF pinout, IRF640STRRPBF application, or IRF640STRRPBF equivalent, this part supports fast-switching, high-temperature (150 °C) operation with dynamic dV/dt capability and ruggedized device design suitable for unclamped inductive switching and repetitive avalanche stress.
Technical Context
This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for low conduction loss and robust transient handling. Its 1.0 °C/W junction-to-case thermal resistance enables high-power dissipation (130 W at TC = 25 °C) in surface-mount configurations without forced cooling.
The device integrates a fast-recovery body diode (trr = 300–610 ns, Qrr = 3.4–7.1 μC) and exhibits stable gate threshold voltage (2.0–4.0 V) across temperature, supporting reliable turn-on control in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports bus voltages up to 160 V DC in industrial SMPS and motor drive half-bridges |
| RDS(on) | 0.18 Ω @ VGS = 10 V - limits conduction loss to ≤3.6 W at 11 A continuous drain current |
| Qg | 70 nC - determines gate driver power requirement and switching speed in 100 kHz–500 kHz applications |
| ID (continuous) | 18 A @ TC = 25 °C - enables high-current output stages without parallel devices in compact layouts |
| EAS | 580 mJ - allows safe operation under unclamped inductive switching (e.g., relay driving, solenoid control) |
| TJ range | −55 to +150 °C - ensures reliability in automotive under-hood and industrial ambient environments |
| dV/dt rating | 5.0 V/ns - prevents spurious turn-on in high-di/dt noise environments like motor phase legs |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain thermal pad; 3-pin configuration optimized for high-current PCB mounting and thermal transfer to copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Controls channel conduction; requires ≥10 V drive for full enhancement; input capacitance Ciss = 1300 pF |
| Pin 2 (D) | Drain | Main high-side current path; electrically connected to thermal pad; handles 200 V blocking and 72 A pulsed current |
| Pin 3 (S) | Source | Reference node for gate drive and current sensing; ties to power ground; hosts body diode anode |
Key Features
| Feature | Design Value |
|---|---|
| Surface-mount D2PAK package | Enables automated assembly and high-power density layout with minimal footprint (9.65 × 10.67 mm) |
| Fully avalanche-rated | Guarantees single-pulse energy survival up to 580 mJ without degradation - critical for relay/snubberless designs |
| Fast switching (tr = 51 ns, tf = 36 ns) | Reduces switching losses in 100–300 kHz converters, improving efficiency over legacy TO-220 alternatives |
| 150 °C operating junction temperature | Supports sealed enclosure operation and eliminates derating below 100 °C ambient in most industrial enclosures |
| Dynamic dV/dt rating (5.0 V/ns) | Prevents false triggering during high-slew-rate transients in half-bridge leg commutation |
Applications
| Industrial Motor Drives | Switch-Mode Power Supplies |
|---|---|
Use Scenario: Half-bridge inverter stage for 100–500 W BLDC motor control in HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side N-channel switch in synchronous rectified topology; handles 18 A continuous phase current. Use Value: Low RDS(on) minimizes I²R loss at 100% duty cycle; avalanche rating absorbs back-EMF spikes during abrupt load stops. |
Use Scenario: Primary-side switch in 200–300 W offline flyback or forward converter for industrial PLC power modules. IC Role / Device Role / Timing Role: Main power switch operating at 65–130 kHz; withstands 200 V reflected primary voltage. Use Value: 70 nC Qg enables efficient gate drive with low-cost 1-A drivers; 5.0 V/ns dV/dt immunity prevents shoot-through in high-noise factory environments. |
| DC-DC Converters | Solenoid & Relay Drivers |
Use Scenario: Synchronous buck stage in 12 V → 3.3 V/20 A point-of-load regulator for embedded controllers. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting reverse recovery current during dead-time. Use Value: Body diode trr = 300–610 ns and Qrr = 3.4–7.1 μC reduce cross-conduction loss and EMI in 500 kHz designs. |
Use Scenario: Inductive load switch for 24 V/2 A solenoids in factory automation I/O modules. IC Role / Device Role / Timing Role: Unclamped inductive switch; absorbs stored energy via intrinsic avalanche breakdown. Use Value: 580 mJ EAS rating eliminates need for external snubbers or freewheeling diodes, reducing BOM count and board space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60FD | 600 V VDS, 0.30 Ω RDS(on), D2PAK package, lower Qg (45 nC) | Better suited for higher-voltage flybacks (>400 V input); higher on-resistance increases conduction loss at 18 A | Choose when system input exceeds 300 V DC and switching frequency >200 kHz favors lower Qg |
| IXTP18N20P | 200 V VDS, 0.16 Ω RDS(on), TO-220 package, higher RthJA (62 °C/W) | Requires heatsink for >5 A continuous; lacks surface-mount compatibility and same avalanche energy (EAS = 320 mJ) | Select only if through-hole assembly is mandatory and thermal management includes mechanical heatsinking |
Compared with STP20NM60FD and IXTP18N20P, IRF640STRRPBF offers optimal balance of voltage rating, on-resistance, and avalanche ruggedness in surface-mount form - making it preferred for 200 V-class industrial power stages where layout density and transient robustness are prioritized over ultra-high-frequency switching.
Availability
IRF640STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, and DC-DC converters requiring stable component supply, RoHS-compliant sourcing, and long-term production continuity.
Supply support for IRF640STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF640STRRPBF belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching, low on-resistance, and fast transient response in high-current surface-mount power conversion systems.
FAQ
What is the maximum continuous drain current for IRF640STRRPBF at 100 °C case temperature?
The IRF640STRRPBF supports 11 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the −55 to +150 °C operating range. At TC = 25 °C, the rating rises to 18 A. Designers must verify PCB copper area and airflow to maintain safe thermal margins in actual layouts.
Does IRF640STRRPBF have a fully rated avalanche capability, and what does that mean in practice?
Yes, IRF640STRRPBF is fully avalanche rated with single-pulse avalanche energy (EAS) of 580 mJ and repetitive avalanche energy (EAR) of 13 mJ. In practice, this means the device can safely absorb inductive energy - such as from relay coils or motor windings - without failure during unclamped switching events, eliminating the need for external snubbers in many industrial control applications.
What is the gate threshold voltage range for IRF640STRRPBF, and how does it affect drive requirements?
The gate threshold voltage (VGS(th)) for IRF640STRRPBF is 2.0–4.0 V at TJ = 25 °C. This range confirms standard-level logic drive compatibility but requires ≥10 V gate-source voltage to achieve the specified 0.18 Ω RDS(on). Using less than 10 V risks higher conduction loss and thermal instability, especially at elevated temperatures where VGS(th) drifts upward.
Can IRF640STRRPBF be used in place of IRF640N or IRF640NPbF?
No - IRF640STRRPBF is not a direct replacement for IRF640N or IRF640NPbF. Those are through-hole TO-220 parts with different thermal resistance (RthJC ≈ 1.5 °C/W vs. 1.0 °C/W), package outline, and mounting method. While electrical specs overlap, PCB layout, thermal management, and mechanical retention differ fundamentally. IRF640STRRPBF is specifically the D2PAK (TO-263) lead-free variant of the IRF640S family.
What is the typical body diode reverse recovery time (trr) for IRF640STRRPBF, and why does it matter in synchronous rectification?
The body diode reverse recovery time (trr) for IRF640STRRPBF is 300–610 ns at TJ = 25 °C, IF = 18 A, and dI/dt = 100 A/μs. In synchronous rectification, this parameter directly impacts switching loss and EMI during dead-time transitions. A shorter trr reduces cross-conduction risk and improves efficiency - particularly in high-frequency buck converters where IRF640STRRPBF serves as the low-side switch.
IRF640STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 130W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF640STRRPBF FAQ
1.How can I place an order for IRF640STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF640STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF640STRRPBF reliable?
The price and inventory of IRF640STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF640STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF640STRRPBF?
IRF640STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF640STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF640STRRPBF?
For technical support, including IRF640STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640STRRPBF requirements.
6.How does Aetrix verify that IRF640STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF640STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF640STRRPBF?
All IRF640STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF640STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF640STRRPBF part is unused and in its original packaging.
Return procedure for IRF640STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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