Analog Devices Inc. 104124-HMC574MS8
- Part No.:
- 104124-HMC574MS8
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
104124-HMC574MS8.pdf
- Description:
- BOARD EVAL HMC574MS8E
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
HMC574MS8 from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC SPDT T/R switch for DC–3 GHz transmit/receive signal routing in RF front-ends. It delivers 0.3 dB typical insertion loss at 2 GHz, +65 dBm input third-order intercept at +8 V bias, and 30 dB isolation - enabling high-linearity cellular/3G infrastructure and WiMAX transceivers with 5 W RF power handling.
For engineers reviewing the HMC574MS8 datasheet, HMC574MS8 pinout, HMC574MS8 application, or HMC574MS8 equivalent, this page provides verified specifications, truth-table-driven control logic, thermal and ESD ratings, MSOP-8 package details, and validated alternatives for RF switch selection in high-power, low-distortion wireless systems.
Technical Context
The HMC574MS8 implements a reflective GaAs MMIC architecture where RF1 and RF2 present short-circuit terminations when off, minimizing leakage and enabling broadband operation from DC to 3 GHz. Its dual-control logic (A/B pins) selects RFC→RF1 or RFC→RF2 paths with 120 ns switching time and no external biasing components required.
It operates from a single +3 to +8 V supply with <40 μA quiescent current, supports TTL/CMOS-compatible control inputs, and requires DC blocking capacitors on all three RF ports (RFC, RF1, RF2). Thermal resistance is 100 °C/W with 150 °C max channel temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | DC to 3 GHz - supports full-band operation in cellular, WiMAX, and WLAN without band switching. |
| Insertion Loss (2 GHz) | 0.3 dB typical - minimizes signal attenuation in high-gain transmit chains and sensitive receive paths. |
| Isolation (2 GHz) | 28 dB typical - prevents transmit leakage into receive path, critical for TDD system coexistence. |
| IIP3 (Vdd = +8 V) | +65 dBm - enables high-dynamic-range operation with two-tone +27 dBm inputs at 900/1900 MHz. |
| Power Handling (P1dB) | 39 dBm @ +8 V - supports 5 W incident RF power without compression or damage. |
| Switching Time | 120 ns tON/tOFF - meets fast-agility requirements in burst-mode LTE and TD-SCDMA systems. |
| Supply Voltage Range | +3 to +8 V - allows flexible biasing across low-power portable and high-power base station designs. |
Pinout & Package
Package: 8-lead MSOP (Mini Small Outline Package), RoHS-compliant variant HMC574MS8E uses matte Sn finish; standard HMC574MS8 uses Sn/Pb. MSL1 rating, 235 °C peak reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A) | Control Input A | Logic-selects RFC→RF1 path when High (Vdd ± 0.2 V); Low enables RFC→RF2. |
| 2 (B) | Control Input B | Complementary to A per truth table; High + Low = RFC→RF2; Low + High = RFC→RF1. |
| 3 (RFC) | Common RF Port | DC-coupled 50 Ω input; requires external DC blocking capacitor for AC-coupled systems. |
| 4 (Vdd) | Positive Supply | Single bias rail (+3 to +8 V); supplies internal GaAs FETs and level-shifting circuitry. |
| 5 (RF1) | RF Output 1 | Reflective short when off; matched to 50 Ω when on; requires DC blocking capacitor. |
| 6, 7 (GND) | Ground Terminals | RF/DC ground reference; must be soldered directly to PCB ground plane per RF layout best practice. |
| 8 (RF2) | RF Output 2 | Reflective short when off; electrically identical to RF1; requires DC blocking capacitor. |
Key Features
| Feature | Design Value |
|---|---|
| Low Distortion Architecture | Reflective SPDT design with +65 dBm IIP3 ensures minimal intermodulation in multi-carrier 3G/WiMAX base stations. |
| High Power Robustness | Rated for 39 dBm continuous input power at +8 V, supporting 5 W P1dB operation without derating. |
| Wideband DC–3 GHz Operation | No internal matching networks required - simplifies integration across multiple wireless standards in one platform. |
| CMOS/TTL-Compatible Control | Direct interface with HC/HCT logic families eliminates need for level shifters in digital-controlled RF systems. |
| ESD Hardened (HBM Class 1A) | Withstands >2 kV ESD events - reduces handling sensitivity during SMT assembly and board-level test. |
Applications
| Cellular/3G Infrastructure | WiMAX/WiBro Base Stations |
|---|---|
Use Scenario: TDD transceiver front-end in macrocell BTS requiring fast switching between Tx and Rx paths. IC Role / Device Role / Timing Role: Reflective SPDT switch routing antenna signal between PA output and LNA input under digital control. Use Value: 0.3 dB insertion loss preserves PA efficiency; 30 dB isolation prevents Tx leakage from desensitizing LNA during Rx burst. |
Use Scenario: Dual-band WiMAX outdoor CPE unit operating in 2.3–2.7 GHz and 3.3–3.8 GHz bands with shared antenna. IC Role / Device Role / Timing Role: Band-select switch enabling single-antenna operation across frequency-agile OFDMA channels. Use Value: +65 dBm IIP3 maintains EVM compliance under high-input-power multi-tone conditions; DC–3 GHz range covers both bands. |
| Automotive Telematics | Test & Measurement Equipment |
Use Scenario: In-vehicle LTE+GNSS combo module requiring simultaneous GPS reception and cellular transmission. IC Role / Device Role / Timing Role: Antenna switch isolating GNSS LNA input from LTE PA output during concurrent operation. Use Value: 28 dB isolation at 1.575 GHz prevents LTE harmonics from degrading GPS C/N0; -40 to +85 °C rating ensures automotive reliability. |
Use Scenario: Automated RF test fixture switching between DUT ports for S-parameter and distortion measurements. IC Role / Device Role / Timing Role: Signal path selector routing VNA stimulus/response through calibrated reference paths. Use Value: 120 ns switching time enables rapid sequential measurement; 0.3 dB loss preserves calibration traceability across 50 Ω system. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SPDT RF switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QM11036 | 0.4 dB IL @ 2.5 GHz, +60 dBm IIP3, +5 V only, 3 × 3 mm QFN | Lower power handling (33 dBm P1dB), optimized for mobile handset PA modules | Prefer for space-constrained consumer devices; not suitable for 5 W infrastructure use cases. |
| Analog Devices ADMV7710 | 0.25 dB IL @ 2.5 GHz, +68 dBm IIP3, +3.3 V only, 24-lead LGA | Higher integration (integrated drivers), wider bandwidth (DC–6 GHz), higher cost | Choose when needing extended frequency coverage or integrated control logic; over-spec for 3 GHz-only deployments. |
Compared with QM11036 and ADMV7710, the HMC574MS8 offers optimal balance of 5 W power handling, +65 dBm linearity, and MSOP-8 footprint for cost-sensitive infrastructure RF front-ends - while maintaining compatibility with legacy +3 to +8 V bias architectures.
Availability
HMC574MS8 is available at Aetrix Electronics and suitable for cellular infrastructure, WiMAX base stations, and automotive telematics requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.
Supply support for HMC574MS8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving communications, industrial, and automotive markets with precision signal processing solutions.
The HMC574MS8 belongs to Analog Devices' legacy Hittite RF switch product line, designed specifically for high-linearity, high-power T/R switching in wireless infrastructure and test equipment where GaAs performance exceeds silicon alternatives.
FAQ
What is the maximum RF input power the HMC574MS8 can handle continuously?
The HMC574MS8 supports 39 dBm (≈8 W) continuous RF input power at +8 V bias within its DC–2.5 GHz range, with thermal derating above +85 °C. Its 0.65 W continuous power dissipation rating and 100 °C/W thermal resistance ensure safe operation under sustained high-power conditions typical in macrocell base stations.
Does the HMC574MS8 require external DC blocking capacitors on all RF ports?
Yes - the HMC574MS8 requires external DC blocking capacitors on RFC, RF1, and RF2 ports because all RF terminals are DC-coupled. Capacitor value determines the low-frequency cutoff; for example, a 100 pF capacitor sets flow ≈ 16 MHz in a 50 Ω system. This is mandatory to prevent bias disruption and ensure proper impedance matching.
What is the control logic voltage range for the A and B pins of the HMC574MS8?
The HMC574MS8 A and B control inputs accept logic levels from –0.2 V to Vdd (up to +10 V), with defined thresholds: Low = 0 to +0.2 V at 10 μA, High = Vdd ± 0.2 V at 10 μA. This allows direct interfacing with +3 V, +5 V, or +8 V CMOS/TTL logic without level shifters - a key design advantage over voltage-restricted alternatives.
How does the HMC574MS8 perform at elevated temperatures like +85 °C?
At +85 °C, the HMC574MS8 maintains functional operation with measured degradation: insertion loss increases by ≤0.1 dB, isolation decreases by ≤2 dB, and P1dB drops ~1–2 dB versus +25 °C data. Its specified operating range is –40 to +85 °C, and thermal design must account for 10 mW/°C derating above +85 °C ambient.
Is the HMC574MS8 pin-compatible with the HMC574MS8E variant?
Yes - the HMC574MS8 and HMC574MS8E share identical pinout, electrical specifications, and mechanical outline. The sole difference is RoHS compliance: HMC574MS8E uses 100% matte Sn lead finish and 260 °C peak reflow, while HMC574MS8 uses Sn/Pb and 235 °C reflow. Both are drop-in replacements in compatible assembly processes.
104124-HMC574MS8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Obsolete
- Type:
- Switch, SPDT
- Frequency:
- 0Hz ~ 3GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC574MS8
104124-HMC574MS8 FAQ
1.How can I place an order for 104124-HMC574MS8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 104124-HMC574MS8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 104124-HMC574MS8 reliable?
The price and inventory of 104124-HMC574MS8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 104124-HMC574MS8 is usually 5 days.
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5.How can I obtain technical support or documentation for 104124-HMC574MS8?
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6.How does Aetrix verify that 104124-HMC574MS8 is sourced from the original manufacturer or authorized distributors?
All 104124-HMC574MS8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 104124-HMC574MS8 meets industry standards.
7.What is the process for return or replacement of 104124-HMC574MS8?
All 104124-HMC574MS8 units undergo pre-shipment inspection (PSI). If there is an issue with 104124-HMC574MS8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 104124-HMC574MS8 part is unused and in its original packaging.
Return procedure for 104124-HMC574MS8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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