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Analog Devices Inc. 104356-HMC326MS8G

Part No.:
104356-HMC326MS8G
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
Aetrix104356-HMC326MS8G.pdf
Description:
EVAL BOARD HMC326MS8GE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,323

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Product details

Overview

HMC326MS8G from Analog Devices is a GaAs InGaP HBT MMIC driver amplifier operating from 3.0 to 4.5 GHz, delivering 21 dB small-signal gain, +26 dBm saturated output power, and >40% power-added efficiency at +5 V supply. It features power-down control (1 µA standby current), 10 ns switching speed, and is packaged in an 8-lead MSOP with exposed thermal paddle for RF and thermal performance in microwave radio front-ends.

For engineers reviewing the HMC326MS8G datasheet, HMC326MS8G pinout, HMC326MS8G application, or HMC326MS8G equivalent, key selection criteria include its 3–4.5 GHz bandwidth, +26 dBm Psat, 36 dBm OIP3, 5 dB noise figure, and integrated power-down functionality for low-power wireless infrastructure stages.

Technical Context

The HMC326MS8G is a monolithic microwave integrated circuit built on GaAs InGaP HBT process technology, optimized for fixed-gain driver-stage amplification in narrowband-to-broadband RF systems. Its internal matching delivers >12 dB input return loss and >7 dB output return loss across 3.0–4.5 GHz without external tuning components.

It employs a single +5 V bias rail with separate 5 V power-down control (Vpd), enabling fast enable/disable transitions (tON/tOFF = 10 ns) and <1 µA quiescent current in shutdown mode. Thermal design leverages the exposed paddle (θJA = 71 °C/W) for reliable operation from –40 °C to +85 °C ambient.

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range 3.0–4.5 GHz - Full specified performance band for microwave radio and WLL driver applications.
Small-Signal Gain 21 dB typical - Fixed high gain enables single-stage amplification without cascading in 4G/5G fronthaul links.
Saturated Output Power (Psat) +26 dBm - Supports high-linearity output drive into 50 Ω loads in broadband transmitters.
Output IP3 +36 dBm typical - Enables robust two-tone linearity for multi-carrier systems with low intermodulation distortion.
Noise Figure 5 dB - Suitable as a driver (not LNA), where signal-to-noise degradation is secondary to gain and power delivery.
Power-Down Current 1 µA at Vpd = 0 V - Enables system-level power gating without external switches or sequencing circuits.
Switching Speed 10 ns tON/tOFF - Allows rapid TDD mode switching in time-division duplexed wireless systems.

Pinout & Package

Package: 8-lead Mini Small Outline Package with Exposed Pad (Mini_SO_EP, JEDEC MO-187-AA-T), 3.0 × 3.0 × 0.95 mm body, exposed thermal paddle on bottom.

Pin/Terminal Circuit Role Design Meaning
1 RF Input 50 Ω matched input port; requires DC blocking capacitor in series for AC-coupled drive.
2 GND Ground connection tied to exposed paddle; must be soldered to large PCB ground plane for thermal and RF stability.
3 Vcc +5 V DC supply pin; bypassed externally with 330 pF and 2.2 µF capacitors per application circuit.
4 GND Secondary ground pin; connects to same ground plane as Pin 2 and exposed paddle.
5 Vpd Power-down control voltage input; 0 V disables amplifier (ICC ≈ 1 µA), +5 V enables operation.
6 GND Ground reference for Vpd control logic; must remain at same potential as other GND pins.
7 RF Output 50 Ω matched output port; requires external DC blocking capacitor for AC-coupled load interface.
8 GND Ground pin adjacent to RF output; critical for minimizing output parasitic inductance.

Key Features

Feature Design Value
High Efficiency >40% PAE at Psat - Reduces heat generation and simplifies thermal management in compact RF modules.
Integrated Power-Down 1 µA standby current with 10 ns switching - Eliminates need for external PMIC or discrete FETs in power-gated architectures.
Thermally Optimized Package Exposed paddle with θJA = 71 °C/W - Enables direct mounting to heatsinks or copper-filled PCB layers for sustained +85 °C operation.
Internal Matching 12 dB input / 7 dB output return loss - Minimizes external matching network complexity in 3–4.5 GHz designs.
Robust ESD Rating HBM Class 1A (≥250 V) - Supports safe handling in standard SMT assembly environments without special ESD protocols.

Applications

Microwave Point-to-Point Radios Broadband Wireless Access Systems

Use Scenario: 3.5 GHz licensed band backhaul link requiring stable +26 dBm output with low intermodulation in outdoor enclosures.

IC Role / Device Role / Timing Role: Final-stage driver amplifier boosting IF-to-RF upconverter output before antenna feed.

Use Value: Delivers +36 dBm OIP3 and 21 dB gain in single stage, reducing component count versus cascaded GaAs FET solutions.

Use Scenario: Fixed wireless access base station supporting multiple 20 MHz channels in 3.3–3.8 GHz spectrum.

IC Role / Device Role / Timing Role: Transmit chain driver enabling high-PAR signal amplification with minimal spectral regrowth.

Use Value: >40% PAE at Psat reduces DC power draw and thermal load in fanless outdoor units.

Wireless Local Loop (WLL) Subscriber Units Test & Measurement Signal Sources

Use Scenario: Customer-premises equipment (CPE) operating in 3.4–3.6 GHz unlicensed band with strict power consumption limits.

IC Role / Device Role / Timing Role: Medium-power RF driver between DAC-based digital upconverter and power amplifier stage.

Use Value: 1 µA power-down current allows deep sleep during idle periods, extending battery-backed operation.

Use Scenario: Lab-grade RF signal generator module requiring fast amplitude modulation and repeatable gain flatness.

IC Role / Device Role / Timing Role: Calibration-grade gain block in programmable attenuator/amplifier test path.

Use Value: 0.035 dB/°C gain drift and ±0.5 dB gain variation over 3–4.5 GHz support traceable measurement accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar driver amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
HMC451LP3E Wider 2.5–6.0 GHz range, +25 dBm Psat, higher 150 mA ICC, no power-down pin. Preferred for multi-band test equipment; unsuitable where low-quiescent-power TDD control is required. Select when broader frequency coverage outweighs need for power gating.
QPL9057 3.3–4.2 GHz, +24 dBm Psat, 3.5 dB NF, integrated active bias, no Vpd pin, 1.8 V logic-compatible enable. Better for space-constrained 5G small cells needing lower-voltage control; lacks HMC326MS8G's 10 ns switching. Choose when 1.8 V enable interface and smaller footprint are prioritized over ultrafast switching.

Compared with HMC451LP3E and QPL9057, the HMC326MS8G uniquely combines 10 ns power-down switching, 1 µA standby current, and >40% PAE in a thermally enhanced MSOP-8 package-making it optimal for thermally constrained, rapidly gated microwave radio drivers.

Availability

HMC326MS8G is available at Aetrix Electronics and suitable for microwave radios, broadband wireless access systems, and wireless local loop driver amplifier applications requiring stable component supply, consistent RF performance, and long-term industrial availability.

Supply support for HMC326MS8G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving communications, industrial, automotive, and instrumentation markets since 1965.

The HMC326MS8G belongs to Analog Devices' Hittite Microwave MMIC product line, engineered specifically for high-efficiency, surface-mount RF driver amplification in 3–6 GHz wireless infrastructure and test equipment.

FAQ

What is the operating temperature range for the HMC326MS8G?

The HMC326MS8G is specified for continuous operation from –40 °C to +85 °C ambient temperature. Its thermal resistance (junction-to-ground paddle) is 71 °C/W, and the maximum junction temperature is 150 °C. Derating begins above 85 °C ambient at 14 mW/°C. The HMC326MS8G maintains full electrical specifications across this range, including gain stability of 0.035 dB/°C and Psat variation under ±0.5 dB.

Does the HMC326MS8G require external matching components?

No, the HMC326MS8G features fully internal 50 Ω input and output matching across 3.0–4.5 GHz, delivering >12 dB input return loss and >7 dB output return loss without external tuning. Only DC blocking capacitors (e.g., 330 pF at input/output) and supply bypassing (330 pF + 2.2 µF) are required per the application circuit. No baluns, stubs, or impedance transformers are needed for nominal operation.

How is power-down controlled on the HMC326MS8G?

Power-down is controlled via the Vpd pin (Pin 5): applying 0 V places the HMC326MS8G in shutdown mode with only 1 µA supply current, while +5 V enables normal operation with 130 mA typical ICC. The transition times are tON/tOFF = 10 ns. Vpd must share the same ground reference (Pin 6) as the rest of the circuit, and no level-shifting is required.

What is the recommended PCB layout for thermal management of the HMC326MS8G?

The HMC326MS8G's exposed paddle must be soldered to a solid, low-impedance PCB ground plane using ≥6 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) connecting to inner or bottom ground layers. The evaluation board (104356) uses Rogers 4350B substrate; for FR-4, increase copper area and via count. Avoid splitting the ground plane under the paddle, and ensure all eight ground pins (Pins 2, 4, 6, 8) connect directly to the same plane.

Is the HMC326MS8G RoHS-compliant?

The HMC326MS8G is not RoHS-compliant; it uses Sn/Pb lead finish and is rated MSL1 with a peak reflow temperature of 235 °C. For RoHS-compliant alternatives, Analog Devices offers the HMC326MS8GE (100% matte Sn, MSL1, 260 °C peak reflow). Both share identical electrical performance and pinout, but HMC326MS8G and HMC326MS8GE are distinct orderable part numbers with different material content and compliance status.

104356-HMC326MS8G Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Box
Product Status:
Active
Type:
Amplifier
Frequency:
3GHz ~ 4.5GHz
Contents:
Board(s)
Utilized IC / Part:
HMC326MS8G

104356-HMC326MS8G FAQ

1.How can I place an order for 104356-HMC326MS8G through Aetrix?

Please submit a Request for Quotation (RFQ) for 104356-HMC326MS8G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 104356-HMC326MS8G reliable?

The price and inventory of 104356-HMC326MS8G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 104356-HMC326MS8G is usually 5 days.

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Once your 104356-HMC326MS8G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 104356-HMC326MS8G?

For technical support, including 104356-HMC326MS8G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 104356-HMC326MS8G requirements.

6.How does Aetrix verify that 104356-HMC326MS8G is sourced from the original manufacturer or authorized distributors?

All 104356-HMC326MS8G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 104356-HMC326MS8G meets industry standards.

7.What is the process for return or replacement of 104356-HMC326MS8G?

All 104356-HMC326MS8G units undergo pre-shipment inspection (PSI). If there is an issue with 104356-HMC326MS8G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 104356-HMC326MS8G part is unused and in its original packaging.

Return procedure for 104356-HMC326MS8G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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