Analog Devices Inc. 104989-HMC406MS8G
- Part No.:
- 104989-HMC406MS8G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
104989-HMC406MS8G.pdf
- Description:
- EVAL BOARD HMC406MS8G
- Quantity:
- Payment:

- Shipping:

Inventory:1,047
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Product details
Overview
HMC406MS8G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT MMIC power amplifier operating in the 5–6 GHz band, delivering +29 dBm saturated output power, 17 dB small-signal gain, and 38% power-added efficiency at +5 V supply. It serves as a final-stage RF power amplifier in licensed and unlicensed broadband wireless transmitters.
For engineers reviewing the HMC406MS8G datasheet, HMC406MS8G pinout, HMC406MS8G application, or HMC406MS8G equivalent, key selection criteria include its 5–6 GHz frequency coverage, power-down control via Vpd, exposed thermal paddle package, and compatibility with WiMAX, DSRC, and UNII-band systems requiring high-efficiency SMT RF amplification.
Technical Context
The HMC406MS8G integrates a two-stage GaAs InGaP HBT amplifier with independent biasing: Vcc powers the input stage (Pin 8), while RFOUT pins (5 & 6) supply bias to the output stage. Its Vpd control pin enables fast (<35 ns) power-down and RF output current scaling without external switching circuitry.
Designed for surface-mount operation in thermally demanding RF front-ends, the device features an exposed ground paddle for low thermal resistance (31 °C/W) and requires direct PCB grounding via multiple vias. Input (RFIN, Pin 3) and output ports are internally matched to 50 Ω, minimizing external matching components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 5–6 GHz - Full-band operation across WiMAX (5.25–5.85 GHz), DSRC (5.85–5.925 GHz), and UNII-3 (5.725–5.825 GHz) allocations. |
| Saturated Output Power (Psat) | +29 dBm - Delivers 794 mW RF output into 50 Ω, enabling high-link-margin transmitter stages. |
| Small-Signal Gain | 17 dB typical - Provides sufficient gain to drive subsequent stages or antenna interfaces with minimal added noise. |
| Power-Added Efficiency (PAE) | 38% at Psat - Reduces DC power consumption and thermal load in battery- or thermally constrained systems. |
| Supply Voltage | +5 V - Compatible with standard RF system power rails; supports operation down to +4.75 V with stable gain/power performance. |
| Power-Down Control (Vpd) | 0 V → 5 V range - Enables <2 µA standby current and >30 dB RF output isolation, critical for TDD/FDD mode switching. |
| Thermal Resistance | 31 °C/W (junction-to-paddle) - Requires soldered exposed paddle and ≥6 thermal vias for reliable operation at full power in +85 °C ambient. |
Pinout & Package
Package: 8-lead MSOP (Mini Small Outline Package) with exposed thermal paddle (low-stress injection-molded plastic, Sn/Pb lead finish, MSL1). Dimensions: 3.0 × 3.0 × 0.85 mm; paddle must be soldered to PCB ground plane using ≥6 thermal vias.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Vpd | Power-down control voltage input; 0 V disables amplifier (Icq ≈ 2 µA), 5 V enables full output (Icq = 300 mA). |
| 2, 4, 7 | GND | RF and DC ground terminals; connected internally to exposed paddle - must be shorted to PCB ground plane with minimum impedance. |
| 3 | RFIN | 50 Ω AC-coupled RF input; internal matching eliminates need for external input network in most applications. |
| 5, 6 | RFOUT | RF output and output-stage bias supply; requires external 50 Ω termination and local bypassing for stable PA operation. |
| 8 | Vcc | +5 V supply for input stage; requires 330 pF bypass capacitor placed within 0.5 mm of pin per RF layout best practices. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Power-Down Control | Vpd pin enables sub-µs switching between full-power and ultra-low-current (2 µA) states - eliminates need for external RF switches in TDD systems. |
| Thermally Optimized Package | Exposed copper paddle with 31 °C/W junction-to-ground thermal resistance - allows continuous +29 dBm operation at +85 °C ambient with proper PCB heatsinking. |
| Minimal External Components | Only three external capacitors (C1–C3) and one inductor (L1) required for full functionality - reduces BOM count and board area in compact RF modules. |
| 50 Ω Matched I/O Ports | Input (RFIN) and output (RFOUT) ports pre-matched to 50 Ω - simplifies integration into existing RF signal chains without custom impedance transformers. |
| High Linearity (IP3) | +38 dBm typical output IP3 at 5.8 GHz - supports multi-carrier OFDM waveforms (e.g., WiMAX, LTE-U) with low adjacent-channel interference. |
Applications
| WiMAX Base Station Radio | DSRC Vehicle-to-Vehicle Transmitter |
|---|---|
Use Scenario: Final-stage PA in 5.25–5.85 GHz WiMAX base station outdoor units requiring high output power and thermal resilience. IC Role / Device Role / Timing Role: High-efficiency RF power amplifier delivering +29 dBm into antenna interface with integrated Vpd-based TDD gating. Use Value: 38% PAE reduces cooling requirements and extends outdoor unit service life; 17 dB gain maintains system NF budget without cascaded amplifiers. |
Use Scenario: Transmit path PA in automotive DSRC modules operating at 5.85–5.925 GHz for low-latency vehicle-to-vehicle safety messaging. IC Role / Device Role / Timing Role: Compact SMT power amplifier enabling rapid RF on/off switching via Vpd for synchronized channel access. Use Value: 35 ns switching speed ensures precise timing alignment in IEEE 1609.4-compliant multi-channel operation; MSOP package fits tight automotive PCB footprints. |
| UNII-3 Band Access Point | Military Tactical Radio Front-End |
Use Scenario: 5.725–5.825 GHz UNII-3 Wi-Fi 5/6 access point PA where spectral purity and thermal headroom are critical. IC Role / Device Role / Timing Role: Linear driver amplifier supporting 256-QAM modulation with +38 dBm OIP3 and low 6.0 dB noise figure. Use Value: High linearity preserves EVM under dense multi-user conditions; 5–6 GHz bandwidth covers entire UNII-3 band without retuning. |
Use Scenario: Wideband SATCOM or data link transmitter in portable military radios requiring rugged, high-reliability RF amplification. IC Role / Device Role / Timing Role: Radiation-tolerant GaAs HBT PA with -40 to +85 °C operational range and absolute max ratings up to +150 °C junction temperature. Use Value: Extended temperature capability and 2.1 W continuous dissipation enable deployment in harsh field environments without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPA9121 | 5.1–5.9 GHz, +30 dBm Psat, 32% PAE, 5 V supply, no integrated Vpd control - requires external gate driver for power-down. | Lacks monolithic power-down function; better suited for FDD systems where continuous operation is preferred. | Choose QPA9121 when higher Psat (+30 dBm) is prioritized over fast TDD switching; verify external bias control design. |
| Analog Devices HMC1096LP4E | 4.5–6.0 GHz, +28 dBm Psat, 35% PAE, +5 V, includes Vpd but uses 4×4 mm QFN (not MSOP); higher thermal resistance (42 °C/W). | Same functional scope but larger footprint and lower thermal performance - less suitable for space-constrained designs. | Choose HMC1096LP4E only if broader 4.5–6.0 GHz coverage is mandatory and PCB area permits larger package. |
Compared with QPA9121 and HMC1096LP4E, the HMC406MS8G uniquely balances 5–6 GHz band optimization, integrated Vpd control, MSOP size, and 31 °C/W thermal resistance - making it optimal for compact, TDD-capable wireless infrastructure where layout area and thermal management are tightly coupled constraints.
Availability
HMC406MS8G is available at Aetrix Electronics and suitable for WiMAX base stations, DSRC vehicle communication systems, and UNII-3 access points requiring stable component supply, consistent RF performance across temperature, and long-term obsolescence mitigation.
Supply support for HMC406MS8G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF portfolio, including GaAs and GaN MMICs for defense, communications, and test instrumentation.
The HMC406MS8G belongs to Hittite's legacy MMIC power amplifier product line, engineered specifically for 5–6 GHz licensed and unlicensed wireless infrastructure requiring high efficiency, fast control, and robust thermal performance in surface-mount form.
FAQ
What is the operating frequency range of the HMC406MS8G?
The HMC406MS8G operates from 5 to 6 GHz, covering the full WiMAX (5.25–5.85 GHz), DSRC (5.85–5.925 GHz), and UNII-3 (5.725–5.825 GHz) bands. Its gain and output power remain stable across this range, with typical Psat of +29 dBm and gain of 17 dB at 5.8 GHz per the datasheet's electrical specifications table.
Does the HMC406MS8G require external matching components?
The HMC406MS8G features internally matched 50 Ω input (RFIN, Pin 3) and output (RFOUT, Pins 5 & 6) ports, eliminating the need for external impedance-matching networks in most standard 50 Ω systems. Only three bypass capacitors (330 pF on Vcc, 2.2 µF bulk, 100 pF RF) and one RF choke inductor (3.9 nH) are required per the recommended application circuit.
How does the Vpd pin function in the HMC406MS8G?
The Vpd pin on the HMC406MS8G controls amplifier bias state: applying 0 V reduces quiescent current to ~2 µA and provides >30 dB RF output isolation, while 5 V enables full operation with 300 mA Icq and +29 dBm Psat. Switching between states occurs in under 35 ns, supporting time-division duplexing without external RF switches.
What thermal management is required for the HMC406MS8G at full power?
At +29 dBm output, the HMC406MS8G dissipates ~1.2 W. Its 31 °C/W thermal resistance requires the exposed paddle to be soldered to a solid PCB ground plane with ≥6 thermal vias (0.3 mm diameter, spaced ≤1 mm apart). Without this, junction temperature exceeds 150 °C at +85 °C ambient - violating absolute maximum ratings.
Is the HMC406MS8G RoHS-compliant?
The HMC406MS8G uses Sn/Pb lead finish and is not RoHS-compliant; it is rated MSL1 with a peak reflow temperature of 235 °C. For RoHS compliance, the pin-compatible HMC406MS8GE variant is available with 100% matte tin finish and 260 °C reflow rating - both share identical electrical and thermal specifications.
104989-HMC406MS8G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 5GHz ~ 6GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC406MS8G
104989-HMC406MS8G FAQ
1.How can I place an order for 104989-HMC406MS8G through Aetrix?
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6.How does Aetrix verify that 104989-HMC406MS8G is sourced from the original manufacturer or authorized distributors?
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7.What is the process for return or replacement of 104989-HMC406MS8G?
All 104989-HMC406MS8G units undergo pre-shipment inspection (PSI). If there is an issue with 104989-HMC406MS8G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 104989-HMC406MS8G part is unused and in its original packaging.
Return procedure for 104989-HMC406MS8G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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