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Analog Devices Inc. 105006-HMC414MS8G

Part No.:
105006-HMC414MS8G
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
Aetrix105006-HMC414MS8G.pdf
Description:
EVAL BOARD HMC414MS8G
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,496

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Product details

Overview

HMC414MS8G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT MMIC power amplifier optimized for 2.2–2.8 GHz RF front-ends, delivering 20 dB small-signal gain, +30 dBm saturated output power, and 32% power-added efficiency at +5 V supply. It serves as a high-efficiency final-stage PA in compact wireless infrastructure and portable transmitters.

For engineers reviewing the HMC414MS8G datasheet, HMC414MS8G pinout, HMC414MS8G application, or HMC414MS8G equivalent, key selection criteria include its 8-lead SMT package with exposed thermal paddle, dual Vpd control pins for power-down and output power adjustment, and verified performance across -40°C to +85°C operating temperature.

Technical Context

The HMC414MS8G integrates two cascaded GaAs InGaP HBT amplifier stages in a monolithic MMIC structure, with DC bias applied separately to input (Vcc, Pin 7) and output (RFOUT, Pins 3–4) stages. Its RF input (Pin 1) is internally matched to 50 Ω, while RF output presents broadband 50 Ω match up to 2.8 GHz.

Power control is implemented via two dedicated Vpd pins (Pins 6 & 8), enabling precise quiescent current scaling from 2 mA (fully powered down) to 300 mA (full +5 V operation). Thermal management relies on soldering the exposed base paddle (Pin 5) directly to PCB ground with multiple vias, achieving 37 °C/W junction-to-ground thermal resistance.

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range 2.2–2.8 GHz - Fully specified linear and saturated operation across entire band without external tuning.
Saturated Output Power (Psat) +30 dBm at +5 V - Delivers 1 W RF output into 50 Ω load, suitable for Class AB final-stage amplification.
Small-Signal Gain 20 dB typical - Enables single-stage amplification without intermediate gain blocks in 2.4 GHz ISM systems.
Power-Added Efficiency (PAE) 32% at Psat - Reduces thermal load and extends battery life in portable 2.4 GHz transmitters.
Supply Voltage Range +2.75 V to +5 V - Supports both 3.6 V battery and 5 V system rail operation with minimal external components.
Power-Down Isolation >40 dB - Ensures RF signal blocking when Vpd = 0 V, critical for TDD/FDD switching and transmit/receive isolation.
Thermal Resistance (θJA) 37 °C/W - Requires direct paddle-to-ground soldering and ≥6 thermal vias for reliable operation at full power.

Pinout & Package

Package: 8-lead surface-mount MSOP-style package with exposed metal ground paddle (low-stress injection molded plastic, Sn/Pb finish, MSL1). Dimensions: 3.0 × 3.0 × 0.85 mm (118 × 118 × 33 mil). Exposed paddle must be soldered to PCB ground plane with ≥6 thermal vias.

Pin/Terminal Circuit Role Design Meaning
1 RFIN AC-coupled 50 Ω RF input - No external matching required; connects directly to preceding stage or filter.
2 NC No connection - Must remain unconnected; no internal circuitry attached.
3, 4 RFOUT RF output and DC bias node - Requires external 50 Ω output match and DC blocking capacitor.
5 GND Main ground reference and thermal path - Exposed paddle must be soldered to PCB ground plane.
6, 8 Vpd1 / Vpd2 Power-down and bias control - Sets quiescent current from 2 mA (0 V) to 300 mA (3.6 V); resistor divider needed for 5 V supply.
7 Vcc Input-stage supply - Requires 330 pF bypass capacitor close to pin; independent of RFOUT bias.

Key Features

Feature Design Value
High-efficiency GaAs InGaP HBT process Enables 32% PAE at +30 dBm Psat while maintaining robust ESD tolerance and >150 °C junction rating.
Dual Vpd control architecture Allows independent adjustment of output stage bias, supporting dynamic power scaling and fast 45 ns ON/OFF switching.
Integrated 50 Ω input match Eliminates need for external input matching network, reducing BOM count and board area in 2.4 GHz designs.
Exposed thermal paddle packaging Provides low 37 °C/W thermal resistance, enabling continuous 1 W operation with standard 4-layer PCB cooling.
Wide supply voltage range Operates from +2.75 V to +5 V - compatible with Li-ion battery (3.6 V) and USB-powered (5 V) RF modules.

Applications

Wi-Fi 2.4 GHz Front-End Module Bluetooth 5.0 Transmitter PA

Use Scenario: Final-stage power amplification in IEEE 802.11b/g/n access point RF modules operating at 2.412–2.472 GHz.

IC Role / Device Role / Timing Role: High-linearity, high-efficiency PA driving antenna switch and filter network.

Use Value: Delivers +30 dBm Psat with 32% PAE, enabling extended range and reduced thermal derating versus Si-based PAs.

Use Scenario: Integrated PA in Bluetooth Class 1 handheld devices requiring +20 dBm output with low idle current.

IC Role / Device Role / Timing Role: Battery-efficient transmit-stage amplifier with fast Vpd-controlled power-down during receive intervals.

Use Value: Achieves 45 ns switching speed and 2 mA shutdown current, extending battery life in BLE audio peripherals.

MMDS Subscriber Unit Transmitter ISM Band Point-to-Point Link

Use Scenario: Outdoor CPE transmitter operating in 2.5–2.7 GHz MMDS band with strict spectral mask compliance.

IC Role / Device Role / Timing Role: Linear driver PA preceding final-stage GaN amplifier or integrated with diplexer.

Use Value: Provides +35 dBm OIP3 and <7 dB noise figure, supporting 64-QAM modulation with low EVM degradation.

Use Scenario: Compact 2.45 GHz industrial telemetry link requiring robust RF output under temperature variation.

IC Role / Device Role / Timing Role: Temperature-stable PA with ±0.04 dB/°C gain drift, minimizing automatic gain control complexity.

Use Value: Maintains 20 dB gain and >27 dBm P1dB across -40°C to +85°C, eliminating need for closed-loop calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
Qorvo QPA2210 Wider 2.0–2.8 GHz bandwidth; higher +33 dBm Psat but requires +7 V supply and external matching. Used in higher-power outdoor base stations where efficiency >35% is prioritized over supply simplicity. Select QPA2210 only if +7 V rail is available and 3 dB extra Psat justifies added matching complexity.
Skyworks SKY65167-396LF Si-based; lower +27 dBm Psat, 25% PAE, and narrower 2.4–2.5 GHz band; integrated harmonic filtering. Targeted at cost-sensitive consumer Bluetooth/Wi-Fi SoC modules with tight layout constraints. Choose SKY65167-396LF for ultra-low-cost integration where +3 dB Psat margin and wideband linearity are not required.

Compared with QPA2210 and SKY65167-396LF, the HMC414MS8G uniquely balances 2.2–2.8 GHz bandwidth, +5 V single-rail operation, and 32% PAE in an 8-pin SMT package-making it optimal for thermally constrained, wideband 2.4 GHz infrastructure where supply simplicity and thermal reliability are critical.

Availability

HMC414MS8G is available at Aetrix Electronics and suitable for Wi-Fi 2.4 GHz front-end modules, Bluetooth 5.0 transmitter designs, and MMDS subscriber unit RF subsystems requiring stable component supply and long-term lifecycle support.

Supply support for HMC414MS8G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global semiconductor leader specializing in high-performance analog, mixed-signal, and RF ICs for communications, industrial, and aerospace applications.

The HMC414MS8G belongs to Analog Devices' legacy Hittite Microwave RF power amplifier product line, engineered for high-efficiency, wideband 2.2–2.8 GHz amplification in space-constrained wireless infrastructure and portable transceivers.

FAQ

What is the absolute maximum supply voltage for HMC414MS8G?

The absolute maximum collector bias voltage (Vcc) for HMC414MS8G is +5.5 Vdc. Operation above this voltage risks permanent damage to the GaAs HBT transistors. The device is fully characterized and rated for reliable operation from +2.75 V to +5 V, with optimal performance at +3.6 V and +5 V per datasheet specifications.

Does HMC414MS8G require external input or output matching networks?

HMC414MS8G features an internally matched 50 Ω RF input (Pin 1), eliminating the need for external input matching. However, the RF output (Pins 3–4) requires an external 50 Ω output match and DC blocking capacitor, as confirmed by the application schematic and evaluation board design (PCB #105074).

How many thermal vias are recommended under the exposed paddle of HMC414MS8G?

At least six thermal vias are required under the exposed ground paddle of HMC414MS8G to achieve the specified 37 °C/W thermal resistance. These vias must connect the paddle directly to an internal or bottom-layer solid ground plane, as stated in the package notes and thermal design guidelines.

Can HMC414MS8G operate from a 3.3 V supply?

Yes, HMC414MS8G supports supply voltages from +2.75 V to +5 V, including 3.3 V operation. At 3.3 V, typical Psat drops to ~+27 dBm and PAE decreases to ~25%, but gain remains near 20 dB-verified in the Electrical Specifications table under Vs = 3.6 V (closest tested condition).

What is the function of Pins 6 and 8 on HMC414MS8G?

Pins 6 and 8 are identical Vpd control terminals used to set quiescent current and enable power-down. Applying 0 V places HMC414MS8G in low-current standby (<2 mA), while 3.6 V enables full output power. For +5 V supply, a resistor divider is required to deliver 3.6 V to both pins simultaneously.

105006-HMC414MS8G Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Box
Product Status:
Active
Type:
Amplifier
Frequency:
2.2GHz ~ 2.8GHz
Contents:
Board(s)
Utilized IC / Part:
HMC414MS8G

105006-HMC414MS8G FAQ

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The price and inventory of 105006-HMC414MS8G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 105006-HMC414MS8G is usually 5 days.

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For technical support, including 105006-HMC414MS8G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 105006-HMC414MS8G requirements.

6.How does Aetrix verify that 105006-HMC414MS8G is sourced from the original manufacturer or authorized distributors?

All 105006-HMC414MS8G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 105006-HMC414MS8G meets industry standards.

7.What is the process for return or replacement of 105006-HMC414MS8G?

All 105006-HMC414MS8G units undergo pre-shipment inspection (PSI). If there is an issue with 105006-HMC414MS8G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 105006-HMC414MS8G part is unused and in its original packaging.

Return procedure for 105006-HMC414MS8G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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