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Analog Devices Inc. 108349-HMC450QS16G
- Part No.:
- 108349-HMC450QS16G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
108349-HMC450QS16G.pdf
- Description:
- BOARD EVAL HMC450QS16GE
- Quantity:
- Payment:
- Shipping:
Inventory:4,319
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Product details
Overview
HMC450QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT MMIC power amplifier optimized for 800–1000 MHz cellular infrastructure applications. It delivers 26 dB gain, +28.5 dBm saturated output power, and +40 dBm OIP3 at +5 V supply, with integrated Vpd power control enabling RF output power/current regulation or full shutdown. It serves as a linear driver stage in base station transmit chains.
For engineers reviewing the HMC450QS16G datasheet, HMC450QS16G pinout, HMC450QS16G application, or HMC450QS16G equivalent, key selection criteria include its 0.8–1.0 GHz bandwidth, 32% PAE at Psat, 10 ns switching speed, and compatibility with GSM/CDMA/WCDMA modulation schemes requiring high linearity and thermal stability across –40°C to +85°C.
Technical Context
The HMC450QS16G employs a two-stage GaAs InGaP HBT architecture with on-chip biasing and integrated power-down control via dual Vpd pins (Vpd1/Vpd2). Its input is AC-coupled and 50 Ω matched; output provides RF drive and bias for the final stage without external DC blocking.
It operates from a single +5 V supply with 310 mA quiescent current, supports fast 10 ns turn-on/turn-off transitions, and maintains gain variation of only 0.015–0.025 dB/°C over temperature - critical for stable performance in outdoor base station and repeater environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.8–1.0 GHz: Full specified performance across entire band, suitable for GSM900, DCS1800 lower band, and IS-95 CDMA uplink/downlink segments. |
| Small-Signal Gain | 26 dB typical: Enables single-stage amplification from low-level driver outputs to antenna interface without cascading stages. |
| Saturated Output Power (Psat) | +28.5 dBm: Delivers sufficient RF power for medium-power cellular repeaters and small-cell remote radio units. |
| OIP3 | +40 dBm: Ensures low intermodulation distortion in multi-carrier WCDMA and LTE-A deployments with adjacent channel leakage requirements. |
| Power Added Efficiency (PAE) | 32% @ Psat: Reduces thermal load and power supply burden in densely packed RF modules with limited heatsinking. |
| Supply Current (Icq) | 310 mA @ +5 V: Defines minimum DC power draw (1.55 W) for thermal design and PCB copper weight planning. |
| Switching Speed (tON/tOFF) | 10 ns: Supports TDD-based protocols (e.g., TD-SCDMA, TDD-LTE) requiring rapid amplifier enable/disable during slot transitions. |
Pinout & Package
Package: 16-lead surface-mount QFN (5 mm × 5 mm × 0.85 mm), exposed ground paddle, Sn/Pb lead finish, MSL1 rated. Requires soldering of all ground leads and paddle to PCB RF ground plane using multiple thermal vias.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5, 7, 8, 9, 10, 13, 15 | GND | RF and DC ground reference; backside paddle must be connected to solid ground plane with ≥6 thermal vias for thermal management and impedance control. |
| 3, 14 | Vpd1, Vpd2 | Power-down control inputs; tied to +4.0 V for full operation, reduced voltage lowers idle current and RF output - enables dynamic power scaling. |
| 6 | RFIN | 50 Ω AC-coupled RF input; internal matching eliminates need for external input network in most 0.8–1.0 GHz designs. |
| 11, 12 | RFOUT | RF output and bias feed for output stage; requires external 50 Ω matching network and DC blocking before antenna or filter interface. |
| 16 | Vcc | +5 V supply for first amplification stage; mandates local 330 pF bypass capacitor per datasheet layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Power Control (Vpd) | Enables precise RF output power adjustment or complete shutdown without external logic, reducing system component count and PCB area. |
| High Linearity (OIP3 = +40 dBm) | Meets stringent ACLR requirements for multi-carrier 3G/4G systems operating in congested spectrum bands near co-site transmitters. |
| Thermal Stability (Gain Drift ≤ 0.025 dB/°C) | Maintains consistent gain across industrial temperature range (–40°C to +85°C), minimizing need for closed-loop calibration in uncooled enclosures. |
| Low-Noise Figure (8 dB) | Preserves SNR in cascade configurations where HMC450QS16G follows low-noise amplifiers or mixer outputs in receiver-shared transmit paths. |
| Fast Switching (10 ns) | Supports time-division duplexing with minimal guard interval overhead, critical for TD-LTE and WiMAX base station timing budgets. |
Applications
| GSM/EDGE Base Station Driver | CDMA2000 Repeater Amplifier |
|---|---|
Use Scenario: Final driver stage in 900 MHz macrocell BTS transmit chain feeding diplexer and power amplifier. IC Role / Device Role / Timing Role: Linear RF power amplifier providing 26 dB gain and +28.5 dBm Psat before final PA stage. Use Value: High OIP3 (+40 dBm) ensures compliance with ETSI EN 301 908-1 ACLR limits under 200 kHz channel spacing. |
Use Scenario: Bidirectional repeater unit deployed in rural coverage extension, amplifying uplink and downlink signals. IC Role / Device Role / Timing Role: Medium-power driver enabling compact, fanless repeater design with fast TDD switching. Use Value: 10 ns tON/tOFF allows seamless transition between uplink/downlink slots without signal dropout or spectral regrowth. |
| WCDMA Small-Cell Remote Radio Head | IS-95 Cellular Infrastructure Transmitter |
Use Scenario: Transmit path in distributed antenna system (DAS) node covering indoor enterprise environments. IC Role / Device Role / Timing Role: High-efficiency driver delivering +28.5 dBm into 50 Ω load with 32% PAE to minimize thermal dissipation. Use Value: Low thermal resistance (35 °C/W) and exposed paddle package allow direct mounting to aluminum housing without additional heatsink. |
Use Scenario: Forward-link transmitter in legacy CDMA base station upgrade module operating at 870–880 MHz. IC Role / Device Role / Timing Role: Linear amplifier supporting 1.23 MHz chip rate with minimal adjacent channel power. Use Value: Input return loss ≥17 dB and output return loss ≥13 dB simplify matching network design and improve system VSWR tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC413QS16G | Higher frequency band: 1.6–2.3 GHz; identical 16-pin QFN package and pinout but not interoperable at 0.8–1.0 GHz due to internal matching. | Targeted for PCS/DCS and 2.1 GHz WCDMA bands; unsuitable for GSM900 or IS-95 without redesign. | Select HMC413QS16G only when operating above 1.6 GHz; HMC450QS16G remains optimal for sub-1 GHz infrastructure. |
| Qorvo QPA2211 | 0.7–1.0 GHz GaN MMIC; higher Psat (+32 dBm), wider bandwidth, but requires +28 V supply and external gate bias control. | Used in high-power macro base stations; incompatible with +5 V-only architectures and adds complexity in bias sequencing. | Choose QPA2211 for >30 dBm output needs; HMC450QS16G better fits cost-sensitive, low-voltage, medium-power repeater and small-cell designs. |
Compared with HMC413QS16G and QPA2211, the HMC450QS16G offers the best balance of +5 V operation, 26 dB gain, +28.5 dBm Psat, and thermal efficiency in the 0.8–1.0 GHz band - making it uniquely suited for space-constrained, thermally limited, and low-voltage cellular infrastructure modules.
Availability
HMC450QS16G is available at Aetrix Electronics and suitable for GSM/EDGE base stations, CDMA repeaters, WCDMA small-cell radio heads, and IS-95 infrastructure requiring stable component supply, RoHS-compliant sourcing, and long-term lifecycle support.
Supply support for HMC450QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and continues its high-frequency RF IC portfolio, emphasizing precision analog, microwave, and mmWave solutions for communications and defense.
The HMC450QS16G belongs to Hittite's legacy GaAs MMIC power amplifier family, designed specifically for linear, high-efficiency operation in 3G/4G cellular infrastructure transmitters operating below 1 GHz.
FAQ
What is the recommended supply voltage and current for HMC450QS16G?
The HMC450QS16G operates from a nominal +5 V DC supply, with typical quiescent current of 310 mA at +5 V and 25°C. Supply voltage may range from +4.75 V to +5.25 V, with corresponding Icq varying from 300 mA to 325 mA. A 330 pF bypass capacitor is required on the Vcc pin (Pin 16) per the application schematic to ensure stable RF performance and suppress supply noise.
Does HMC450QS16G require external matching networks?
Yes - while the RFIN (Pin 6) is internally matched to 50 Ω across 0.8–1.0 GHz, the RFOUT pins (11 and 12) require an external matching network to achieve optimal power transfer and harmonic suppression. The datasheet provides a complete application circuit with TL lines and discrete components (L1–L3, C4–C6) to realize broadband 50 Ω output match and bias feed.
How does the Vpd control function work on HMC450QS16G?
The HMC450QS16G features dual Vpd pins (3 and 14) that accept a DC voltage to regulate output power and quiescent current. At +4.0 V, the device operates at full gain and Psat; reducing Vpd lowers RF output and idle current proportionally. This enables dynamic power scaling or full shutdown without external switches - critical for TDD systems and energy-efficient repeaters.
What is the thermal resistance and maximum junction temperature of HMC450QS16G?
The HMC450QS16G has a junction-to-ground-paddle thermal resistance of 35 °C/W. Its absolute maximum junction temperature is 150 °C, with continuous power dissipation limited to 1.86 W at +85 °C ambient (derated by 28 mW/°C above that). Proper PCB layout - including soldering the exposed paddle with ≥6 thermal vias to a solid ground plane - is essential to maintain safe operating temperatures.
Is HMC450QS16G pin-compatible with other Hittite QFN power amplifiers?
The HMC450QS16G shares the same 16-lead QFN footprint and pinout as the HMC413QS16G, enabling mechanical drop-in replacement in PCB layouts - however, electrical performance is band-specific: HMC413QS16G is optimized for 1.6–2.3 GHz and will not meet specifications at 0.8–1.0 GHz. No other Hittite/Analog Devices part offers identical 0.8–1.0 GHz performance in this package.
108349-HMC450QS16G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 800MHz ~ 1GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC450QS16G
108349-HMC450QS16G FAQ
1.How can I place an order for 108349-HMC450QS16G through Aetrix?
Please submit a Request for Quotation (RFQ) for 108349-HMC450QS16G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 108349-HMC450QS16G reliable?
The price and inventory of 108349-HMC450QS16G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 108349-HMC450QS16G is usually 5 days.
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Once your 108349-HMC450QS16G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 108349-HMC450QS16G?
For technical support, including 108349-HMC450QS16G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 108349-HMC450QS16G requirements.
6.How does Aetrix verify that 108349-HMC450QS16G is sourced from the original manufacturer or authorized distributors?
All 108349-HMC450QS16G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 108349-HMC450QS16G meets industry standards.
7.What is the process for return or replacement of 108349-HMC450QS16G?
All 108349-HMC450QS16G units undergo pre-shipment inspection (PSI). If there is an issue with 108349-HMC450QS16G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 108349-HMC450QS16G part is unused and in its original packaging.
Return procedure for 108349-HMC450QS16G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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