Analog Devices Inc. 108703-HMC452QS16G
- Part No.:
- 108703-HMC452QS16G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
108703-HMC452QS16G.pdf
- Description:
- BOARD EVAL HMC452QS16 1900MHZ
- Quantity:
- Payment:

- Shipping:

Inventory:2,676
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Product details
Overview
HMC452QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1 W RF power amplifier operating from 0.4 to 2.2 GHz, delivering 31 dBm saturated output power, 22.5 dB gain at 400 MHz, and +48 dBm output IP3 at 2.1 GHz with 53% PAE at +31 dBm Pout. It serves as a high-linearity driver in cellular base station front-ends and fixed wireless transmitters.
For engineers reviewing the HMC452QS16G datasheet, HMC452QS16G pinout, HMC452QS16G application, or HMC452QS16G equivalent, key selection criteria include its QSOP16G package footprint, single +5 V supply operation, integrated VPD power control, broadband 0.4–2.2 GHz coverage, and verified W-CDMA/CDMA2000 channel power performance.
Technical Context
The HMC452QS16G employs a monolithic GaAs InGaP HBT process for high reliability and temperature stability across –40°C to +85°C. Its two-stage amplifier architecture supports DC-coupled RFIN and bias-fed RFOUT, with external matching required on both ports per application circuits.
Power control is implemented via the VPD pin, enabling full shutdown or fine-grained RF output power/current adjustment without altering supply voltage. Gain flatness and return loss are maintained across bands using off-chip LC networks optimized per frequency band (e.g., 400 MHz, 900 MHz, 1900 MHz, 2100 MHz).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.2 GHz: Full specified operation across GSM, CDMA, W-CDMA, and PCS bands without re-tuning. |
| Saturation Power (Psat) | 32.5 dBm max @ 2.01–2.17 GHz: Enables +31 dBm linear output with headroom for peak-to-average ratio handling. |
| Small-Signal Gain | 22.5 dB typ @ 400 MHz; 9 dB typ @ 2100 MHz: Band-dependent gain profile optimized for multi-band system partitioning. |
| OIP3 | +48 dBm @ 2100 MHz: Supports high adjacent-channel power ratio (ACPR) requirements in W-CDMA and CDMA2000 systems. |
| PAE | 53% @ +31 dBm Pout: Reduces thermal load and DC power consumption in continuous-wave and modulated signal operation. |
| Supply Voltage | +5 V DC: Single-rail compatibility simplifies power delivery and eliminates need for dual or negative supplies. |
| Control Interface | VPD pin: Analog voltage control (0–5 V) for dynamic output power scaling or complete RF shutdown. |
Pinout & Package
Package: QSOP16G - 16-lead plastic surface-mount package with exposed ground paddle; 29.4 mm² footprint; MSL1 rating; Sn/Pb lead finish; thermal resistance θJA = 24.1 °C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5, 7–10, 13–16 | GND | RF/DC ground connections; all must be soldered to PCB ground plane and connected to exposed paddle for thermal and RF integrity. |
| 3 | VPD | Power-down control input; 0 V disables amplifier, +5 V enables full output; no external pull-up required. |
| 6 | RFIN | DC-coupled RF input; requires external matching network (e.g., L/C) for 50 Ω interface and optimal gain/return loss. |
| 11, 12 | RFOUT | RF output and DC bias feed point; requires external matching and DC-blocking capacitor; dual-pin configuration lowers inductance. |
Key Features
| Feature | Design Value |
|---|---|
| InGaP HBT Process | Enables high fT/fmax, superior thermal stability, and >150°C junction rating for rugged outdoor deployment. |
| Broadband Operation | Validated performance across five discrete bands: 400–410, 450–496, 810–960, 1710–1990, and 2010–2170 MHz. |
| Integrated Power Control | VPD pin allows seamless transition between active transmit, low-idle, and zero-RF states without external switches or logic. |
| High Linearity | +48 dBm OIP3 at 2100 MHz meets stringent ACPR specs for W-CDMA (–45 dBc) and CDMA2000 (–45 dBc) systems. |
| Single +5 V Supply | Eliminates need for charge pumps or auxiliary rails-reduces BOM count and layout complexity in compact RF modules. |
Applications
| GSM/EDGE Base Station Driver | W-CDMA Femtocell Power Stage |
|---|---|
Use Scenario: Final-stage amplification in macrocell BTS transceivers operating in 900 MHz band with 200 kHz channel spacing. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power amplifier driving antenna switch module and filter chain. Use Value: Delivers +31 dBm P1dB and +44 dBm OIP3 at 900 MHz, enabling compliant EVM and ACLR performance under 8-PSK modulation. | Use Scenario: Compact indoor access point supporting 64-DPCH W-CDMA with 3.84 MHz bandwidth and 2.14 GHz carrier. IC Role / Device Role / Timing Role: Linear driver stage preceding final PA or directly driving antenna in low-power femtocell architecture. Use Value: Achieves –45 dBc ACPR at +24 dBm channel power with 53% PAE, reducing thermal dissipation in sealed enclosures. |
| CDMA2000 Fixed Wireless CPE | ISM Band Point-to-Point Link |
Use Scenario: Outdoor customer premises equipment transmitting 9-channel forward-link CDMA2000 at 1.96 GHz. IC Role / Device Role / Timing Role: High-dynamic-range power amplifier in uplink path of licensed 1.9 GHz FWA radio. Use Value: +48 dBm OIP3 and +31 dBm Psat ensure robust operation under multi-tone interference and wide temperature range (–40°C to +85°C). | Use Scenario: 2.4 GHz ISM-band data link transmitter requiring high spectral purity and 1 W output in industrial telemetry. IC Role / Device Role / Timing Role: Final RF amplifier in narrowband FSK/OOK system with strict out-of-band emission limits. Use Value: 7 dB noise figure and 12 dB gain at 2.4 GHz support high SNR at receiver input while maintaining FCC Part 15 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC452QS16GE | RoHS-compliant version with 100% matte tin lead finish and 260°C peak reflow rating; identical electrical specs. | Required for lead-free manufacturing; same PCB layout and thermal design as HMC452QS16G. | Select HMC452QS16GE for new designs targeting RoHS compliance and Pb-free assembly. |
| Qorvo QPL9057 | 0.6–2.7 GHz GaAs pHEMT PA; 30 dBm Psat; +44 dBm OIP3; 5 V supply; 16-pin QFN (4×4 mm). | Broader frequency coverage but lower OIP3; optimized for LTE/WiFi coexistence in small cells. | Choose QPL9057 when wider bandwidth or smaller footprint is prioritized over maximum linearity at 2.1 GHz. |
Compared with HMC452QS16GE, the HMC452QS16G offers identical RF performance with Sn/Pb finish for legacy reflow processes; versus QPL9057, it delivers +4 dB higher OIP3 at 2.1 GHz but requires larger QSOP16G footprint and narrower upper-frequency limit.
Availability
HMC452QS16G is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and ISM-band point-to-point links requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for HMC452QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, including GaAs and GaN MMICs for defense, communications, and instrumentation.
The HMC452QS16G belongs to Hittite's linear & power amplifier family, designed specifically for high-efficiency, high-linearity RF transmission in licensed and unlicensed spectrum below 2.2 GHz.
FAQ
What is the absolute maximum RF input power rating for the HMC452QS16G?
The HMC452QS16G has an absolute maximum RF input power rating of +31 dBm when Vs = Vpd = +5 Vdc, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the InGaP HBT transistor junctions, especially under mismatched load conditions or elevated temperature.
Does the HMC452QS16G require external matching components, and if so, where?
Yes, the HMC452QS16G requires external matching components on both RFIN (Pin 6) and RFOUT (Pins 11–12). The datasheet provides recommended values per band-for example, 12 pF capacitors and 47 nH inductor for 400 MHz operation. Matching is essential to achieve specified gain, return loss, and OIP3 performance.
Can the HMC452QS16G operate from a supply voltage other than +5 V?
The HMC452QS16G is characterized and optimized for +5 V DC operation, with specifications guaranteed only at that voltage. While functional down to +4.5 V and up to +5.5 V, gain, Psat, and PAE degrade outside ±0.5 V tolerance; operation beyond +5.3 V on VPD or +6.0 V on Vcc violates absolute maximum ratings.
What is the thermal resistance and recommended PCB layout for heatsinking the HMC452QS16G?
The HMC452QS16G has a junction-to-ground-paddle thermal resistance of 24.1 °C/W. To maintain safe operation, the exposed paddle and all GND pins (1,2,4,5,7–10,13–16) must be soldered to a multilayer PCB ground plane with ≥6 thermal vias (0.3 mm diameter) connecting to inner ground layers. An external heatsink is recommended for continuous +31 dBm operation above +70°C ambient.
Is the HMC452QS16G pin-compatible with the HMC452QS16GE?
Yes, the HMC452QS16G and HMC452QS16GE share identical pinout, package dimensions, and electrical specifications. The only differences are RoHS compliance (matte Sn vs. Sn/Pb), MSL reflow profile (260°C vs. 235°C), and marking; they are drop-in replacements in existing designs where lead-free assembly is not mandated.
108703-HMC452QS16G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 1.9GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC452QS16G
108703-HMC452QS16G FAQ
1.How can I place an order for 108703-HMC452QS16G through Aetrix?
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6.How does Aetrix verify that 108703-HMC452QS16G is sourced from the original manufacturer or authorized distributors?
All 108703-HMC452QS16G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 108703-HMC452QS16G meets industry standards.
7.What is the process for return or replacement of 108703-HMC452QS16G?
All 108703-HMC452QS16G units undergo pre-shipment inspection (PSI). If there is an issue with 108703-HMC452QS16G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 108703-HMC452QS16G part is unused and in its original packaging.
Return procedure for 108703-HMC452QS16G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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