Analog Devices Inc. 108709-HMC453QS16G
- Part No.:
- 108709-HMC453QS16G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
108709-HMC453QS16G.pdf
- Description:
- EVAL BOARD HMC453QS16GE
- Quantity:
- Payment:

- Shipping:

Inventory:2,226
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Product details
Overview
HMC453QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT monolithic microwave integrated circuit (MMIC) power amplifier designed for RF front-end stages in wireless infrastructure. It delivers 1.6 W saturated output power across 0.4–2.2 GHz, with 21.5 dB gain at 400 MHz and +51 dBm output IP3 at 2.1 GHz, operating from a single +5 V supply. It serves as a high-linearity driver stage in cellular base station transmitters, WLL, and fixed wireless access equipment.
For engineers reviewing the HMC453QS16G datasheet, HMC453QS16G pinout, HMC453QS16G application, or HMC453QS16G equivalent, key selection criteria include its broadband gain flatness, integrated VPD power control, QSOP-16G package thermal performance, and verified CDMA2000/W-CDMA ACPR compliance at 2.14 GHz.
Technical Context
The HMC453QS16G employs an InGaP HBT process for high fT/fmax, enabling stable gain and linearity from 400 MHz to 2.2 GHz without internal matching. Its two-stage architecture uses DC-coupled RFIN and bias-fed RFOUT pins, with external passive matching networks optimized per band (e.g., 400 MHz, 900 MHz, 1900 MHz, 2100 MHz).
Power control is implemented via the VPD pin, which adjusts collector quiescent current (ICQ = 725 mA at VPD = +5 V) to trade off PAE, P1dB, and OIP3. Thermal management relies on the exposed ground paddle and low junction-to-case thermal resistance (17.1 °C/W), supporting continuous operation up to +85 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.2 GHz: Full-band operation without reconfiguration; validated across five discrete bands (400, 470, 900, 1900, 2100 MHz). |
| Small-Signal Gain | 21.5 dB @ 400 MHz / 8 dB @ 2100 MHz: Enables flexible system-level gain distribution in multi-band transceivers. |
| OIP3 | +51 dBm @ 2100 MHz: Supports high adjacent-channel power ratio (ACPR) requirements in W-CDMA and CDMA2000 systems. |
| P1dB Output Power | +32 dBm @ 2100 MHz: Delivers 1.6 W saturated output while maintaining >45% PAE at +32 dBm. |
| Supply & Control | +5 V single supply; VPD pin controls ICQ from full-on (725 mA) to deep standby, enabling dynamic power scaling. |
| Noise Figure | 6.5 dB @ 2100 MHz: Suitable for driver-amplifier role where noise contribution is secondary to linearity and power. |
| Thermal Resistance | 17.1 °C/W (junction-to-ground paddle): Requires direct soldering of all GND pins and exposed paddle to PCB thermal plane. |
Pinout & Package
Package: QSOP-16G - 16-lead plastic surface-mount package with exposed ground paddle; body size 29.4 mm²; MSL1 rating; Sn/Pb lead finish (HMC453QS16G variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5, 7–10, 13–16 | GND | RF/DC ground terminals; must be soldered directly to PCB ground plane with multiple vias for low-inductance return path. |
| 3 | VPD | Power-down control input; sets ICQ from 0 to 725 mA; 0–5.4 V range; not for RF signal routing. |
| 6 | RFIN | DC-coupled RF input; requires external matching network (e.g., 12 pF + 47 nH at 400 MHz) for 50 Ω interface. |
| 11, 12 | RFOUT | RF output and DC bias feed point; dual-function node requiring off-chip matching and bias decoupling (2.2 μF tantalum). |
Key Features
| Feature | Design Value |
|---|---|
| InGaP HBT MMIC Process | Enables high breakdown voltage (>6 V), excellent temperature stability, and robust ESD tolerance (Class 1C). |
| Broadband Linearity | +51 dBm OIP3 at 2100 MHz supports -45 dBc ACPR in W-CDMA 64-DPCH, meeting 3GPP BS transmitter specs. |
| Integrated Power Control | VPD pin allows real-time adjustment of ICQ and output power without changing supply voltage or layout. |
| High Efficiency | 45% PAE at +32 dBm Pout reduces thermal load and simplifies heatsinking in compact macro/micro base stations. |
| QSOP-16G Package | Miniature footprint with exposed paddle enables high-power RF performance in space-constrained RF modules. |
Applications
| Cellular Base Station Driver | Fixed Wireless Access Transmitter |
|---|---|
Use Scenario: Final-stage driver in 4G LTE/FDD macro base station transmit chain operating at 2100 MHz. IC Role / Device Role / Timing Role: High-linearity RF power amplifier between pre-driver and final PA stage. Use Value: +51 dBm OIP3 and +32 dBm P1dB enable compliant ACPR performance without digital predistortion overhead. |
Use Scenario: Transmit amplifier in 3.5 GHz licensed WLL CPE unit with 20 MHz channel bandwidth. IC Role / Device Role / Timing Role: Band-selectable driver amplifier supporting 400–2200 MHz frequency agility. Use Value: Single-supply +5 V operation and VPD-based power scaling simplify power management in outdoor units. |
| W-CDMA Node B Front-End | CDMA2000 BTS Power Amplifier Stage |
Use Scenario: 2140 MHz W-CDMA 64-DPCH transmitter in indoor small cell base station. IC Role / Device Role / Timing Role: Linear driver amplifying modulated signal prior to Doherty final stage. Use Value: Verified -45 dBc ACPR at +25 dBm channel power meets 3GPP TS 25.104 spectral mask requirements. |
Use Scenario: Forward-link amplifier in CDMA2000 IS-95 base station operating at 910 MHz or 1960 MHz. IC Role / Device Role / Timing Role: High-dynamic-range gain block delivering +25 dBm channel power. Use Value: +47 dBm OIP3 at 900 MHz and +51 dBm at 1960 MHz ensure clean multi-carrier operation under peak load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC453QS16GE | RoHS-compliant version with 100% matte tin lead finish; identical electrical specs and pinout; max reflow temp 260 °C vs. 235 °C. | Required for lead-free manufacturing; same RF performance and thermal behavior as HMC453QS16G. | Select HMC453QS16GE when RoHS compliance and Pb-free assembly are mandatory. |
| QPA9807 | 5–6000 MHz GaN MMIC; 31 dB gain @ 2140 MHz; +50 dBm OIP3; +33 dBm P1dB; requires +28 V supply. | Higher power and wider bandwidth but incompatible supply and bias architecture; not drop-in. | Choose QPA9807 only when higher output power and extended frequency coverage justify redesign and new power delivery. |
Compared with HMC453QS16GE and QPA9807, the HMC453QS16G offers optimal balance of +5 V simplicity, proven 2.1 GHz linearity, and QSOP-16G thermal integration-making it ideal for cost-sensitive, thermally constrained 3G/4G driver designs where GaN complexity is unnecessary.
Availability
HMC453QS16G is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and WLL equipment requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.
Supply support for HMC453QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, including MMIC amplifiers, mixers, and switches for communications and defense.
The HMC453QS16G belongs to Hittite's legacy linear/power amplifier family, engineered specifically for high-efficiency, high-linearity RF driver applications in wireless infrastructure operating below 2.2 GHz.
FAQ
What is the maximum RF input power the HMC453QS16G can tolerate without damage?
The HMC453QS16G has an absolute maximum RF input power rating of +32 dBm at Vs = VPD = +5 Vdc. Exceeding this level risks permanent degradation of the InGaP HBT transistor. For reliable operation, input drive should remain ≤ +10 dBm in linear regions and ≤ +20 dBm during compression testing, with proper external filtering and isolation.
Does the HMC453QS16G require external matching components, and are they frequency-dependent?
Yes, the HMC453QS16G requires external matching networks on both RFIN (Pin 6) and RFOUT (Pins 11–12). Matching is frequency-dependent: the datasheet provides distinct component values for 400 MHz, 470 MHz, 900 MHz, 1900 MHz, and 2100 MHz bands. Using mismatched components degrades gain flatness, return loss, and OIP3.
How does the VPD pin affect the HMC453QS16G's RF performance and thermal behavior?
The VPD pin directly controls collector quiescent current (ICQ). At VPD = +5 V, ICQ = 725 mA, delivering full gain and OIP3. Reducing VPD lowers ICQ, decreasing P1dB, OIP3, and PAE-but also reducing junction temperature and enabling power-saving modes. Thermal derating remains governed by the 17.1 °C/W thermal resistance regardless of VPD setting.
Can the HMC453QS16G operate outside its specified 0.4–2.2 GHz range, and what are the risks?
No. The HMC453QS16G is characterized and guaranteed only from 0.4 to 2.2 GHz. Operation below 400 MHz or above 2200 MHz results in uncontrolled gain roll-off, degraded return loss (<10 dB), and unpredictable OIP3-potentially causing instability or oscillation. Designers must use band-specific matching and avoid extrapolation beyond datasheet limits.
Is the HMC453QS16G pin-compatible with the HMC453QS16GE, and what are the assembly implications?
Yes, the HMC453QS16G and HMC453QS16GE share identical pinout, footprint, and electrical specifications. The sole difference is lead finish: Sn/Pb (HMC453QS16G) vs. 100% matte Sn (HMC453QS16GE). This requires adjusting reflow profile-peak temperature 235 °C vs. 260 °C-and verifying solder joint reliability per J-STD-020.
108709-HMC453QS16G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 810MHz ~ 960MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC453QS16GE
108709-HMC453QS16G FAQ
1.How can I place an order for 108709-HMC453QS16G through Aetrix?
Please submit a Request for Quotation (RFQ) for 108709-HMC453QS16G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 108709-HMC453QS16G reliable?
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5.How can I obtain technical support or documentation for 108709-HMC453QS16G?
For technical support, including 108709-HMC453QS16G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 108709-HMC453QS16G requirements.
6.How does Aetrix verify that 108709-HMC453QS16G is sourced from the original manufacturer or authorized distributors?
All 108709-HMC453QS16G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 108709-HMC453QS16G meets industry standards.
7.What is the process for return or replacement of 108709-HMC453QS16G?
All 108709-HMC453QS16G units undergo pre-shipment inspection (PSI). If there is an issue with 108709-HMC453QS16G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 108709-HMC453QS16G part is unused and in its original packaging.
Return procedure for 108709-HMC453QS16G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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