Analog Devices Inc. 108712-HMC452ST89
- Part No.:
- 108712-HMC452ST89
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
108712-HMC452ST89.pdf
- Description:
- BOARD EVAL HMC452ST89 1900MHZ
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
HMC452ST89 from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1 W MMIC power amplifier operating from 0.4 to 2.2 GHz, delivering +31 dBm P1dB and +49 dBm OIP3 at 2.1 GHz with 9 dB gain and 50% PAE under +5 V supply. It serves as a final-stage RF power amplifier in cellular infrastructure and fixed wireless transmitters.
For engineers reviewing the HMC452ST89 datasheet, HMC452ST89 pinout, HMC452ST89 application, or HMC452ST89 equivalent, key selection criteria include broadband gain flatness across 400–2100 MHz, high linearity for CDMA2000/W-CDMA modulation, thermal performance up to +85°C, and SOT-89 package compatibility with standard RF layout practices.
Technical Context
The HMC452ST89 integrates a two-stage InGaP HBT amplifier topology optimized for high output IP3 and power-added efficiency across multi-band operation. Its DC-coupled RFIN and RFOUT pins require external matching networks per band-verified at 400 MHz, 900 MHz, 1900 MHz, and 2100 MHz-with bias applied directly to RFOUT.
Performance is stabilized over temperature via inherent HBT process characteristics, with gain variation ≤0.02 dB/°C and junction-to-paddle thermal resistance of 24.1 °C/W. The device operates within –40°C to +85°C ambient, supported by MSL1 packaging and Class 1A ESD rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.2 GHz: Covers GSM/EDGE (400–410 MHz), PCS (1710–1990 MHz), and W-CDMA (2010–2170 MHz) bands without retuning. |
| P1dB Output Power | +31 dBm typ. @ 2100 MHz: Delivers 1.25 W saturated RF output suitable for macro/micro base station driver stages. |
| OIP3 | +49 dBm typ. @ 2100 MHz: Enables <–45 dBc ACPR in W-CDMA 64 DPCH at 2.14 GHz with 5V supply. |
| Small-Signal Gain | 9 dB typ. @ 2100 MHz: Provides stable gain margin for cascaded linearization and feedback control loops. |
| PAE | 50% typ. @ +31 dBm Pout: Reduces thermal load and DC power consumption in continuous-wave and modulated operation. |
| Supply Current | 510 mA @ +5 V: Enables single-rail biasing with low-noise LDOs; dissipation limited to 2.7 W at +85°C ambient. |
| Noise Figure | 6.5 dB typ. @ 400 MHz: Acceptable for driver-amplifier role where preceding LNA sets system NF. |
Pinout & Package
SOT-89 package with exposed paddle for thermal management; requires soldering all ground pins (2, 4) and paddle to PCB RF ground plane using ≥6 thermal vias.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFIN | DC-coupled RF input; requires off-chip 50 Ω matching network (e.g., C1/L1 per 400 MHz circuit). |
| 2 | GND | RF and DC ground reference; must be low-inductance connection to solid ground plane. |
| 3 | RFOUT | RF output and DC bias node; supplies Vcc to output stage; requires off-chip output matching (e.g., L4/C5/C6). |
| 4 | GND | Secondary ground terminal; symmetric layout with Pin 2 ensures balanced grounding for stability. |
Key Features
| Feature | Design Value |
|---|---|
| InGaP HBT Process | Enables high fT/fmax, robust reliability, and >150°C junction temperature tolerance. |
| Broadband Operation | Validated performance across five discrete bands (400, 470, 900, 1900, 2100 MHz) with consistent P1dB and IP3. |
| Single +5 V Supply | Eliminates need for negative or dual-rail bias; simplifies power delivery and reduces BOM count. |
| High Linearity | +45 to +49 dBm OIP3 across full band enables CDMA2000 and W-CDMA compliance without digital predistortion. |
| Thermal Design Support | 24.1 °C/W θJA and exposed paddle allow direct mounting to heatsink or thermal pad on multilayer PCB. |
Applications
| Cellular Base Station Driver | Fixed Wireless Access Unit |
|---|---|
Use Scenario: Final-stage amplification in 4G LTE and 5G NR small-cell remote radio units operating at 2.1 GHz. IC Role / Device Role / Timing Role: High-efficiency RF power amplifier driving antenna interface with 9 dB gain and +49 dBm IP3. Use Value: Meets ACLR <–45 dBc for 20 MHz LTE signals while maintaining 50% PAE at +31 dBm output. | Use Scenario: Outdoor point-to-multipoint base station transmitting in 3.5 GHz CBRS band (with external upconversion). IC Role / Device Role / Timing Role: IF or low-IF driver amplifier before upconverter and final PA, leveraging broadband 0.4–2.2 GHz response. Use Value: Enables flexible frequency planning with verified performance at 1900/2100 MHz and stable gain vs. temperature (≤0.02 dB/°C). |
| CDMA2000 Infrastructure | W-CDMA Node B Transmitter |
Use Scenario: Forward-link power amplification in IS-2000 base stations at 1960 MHz. IC Role / Device Role / Timing Role: Linear driver stage delivering +25 dBm channel power with –45 dBc ACPR. Use Value: Achieves required spectral mask compliance without external DPD, reducing system complexity and cost. | Use Scenario: Transmit chain amplification in 3G UMTS Node B equipment operating at 2140 MHz. IC Role / Device Role / Timing Role: High-dynamic-range amplifier supporting 64 DPCH W-CDMA modulation. Use Value: Delivers +49 dBm OIP3 and <–45 dBc ACPR at 2.14 GHz, meeting 3GPP TS 25.104 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPL9057 | 0.6–2.7 GHz range; 3.3 V supply; +29 dBm P1dB; +44 dBm OIP3; 3×3 mm DFN package. | Lower voltage, smaller footprint, but reduced output power and linearity vs. HMC452ST89. | Preferred for space-constrained portable infrastructure where 1 W output is not required. |
| Analog Devices HMC451LP3E | 0.5–4.0 GHz; +5 V supply; +28 dBm P1dB; +45 dBm OIP3; 3 mm × 3 mm SMT package. | Broadband coverage beyond 2.2 GHz, but lower saturated power and PAE than HMC452ST89. | Selected when wider frequency agility (e.g., 3.5 GHz CBRS) outweighs peak power needs. |
Compared with QPL9057 and HMC451LP3E, the HMC452ST89 delivers highest saturated output (+31.5 dBm) and third-order intercept (+49 dBm) in its 0.4–2.2 GHz band, making it optimal for high-linearity macro/micro base station driver stages requiring minimal external compensation.
Availability
HMC452ST89 is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and 3G/4G base station development requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for HMC452ST89 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio for communications infrastructure and defense applications.
The HMC452ST89 belongs to Hittite's legacy GaAs MMIC power amplifier family, designed specifically for high-efficiency, high-linearity RF driver stages in multi-band cellular and fixed wireless systems.
FAQ
What is the recommended DC bias configuration for HMC452ST89?
The HMC452ST89 uses a single +5 V supply applied to Pin 3 (RFOUT), which serves as both RF output and DC bias node for the output stage. Input stage bias is internally set; no external gate/base bias resistors are needed. Decoupling capacitors (C6, C7) must be placed near Pin 3 per the 400 MHz application circuit.
Does HMC452ST89 require external matching components?
Yes, the HMC452ST89 is DC-coupled on both RFIN (Pin 1) and RFOUT (Pin 3) and requires off-chip matching networks for impedance transformation to 50 Ω. Application circuits for 400 MHz, 900 MHz, 1900 MHz, and 2100 MHz are provided in the datasheet, specifying exact capacitor and inductor values.
What thermal management is required for reliable operation of HMC452ST89?
The HMC452ST89 has a junction-to-paddle thermal resistance of 24.1 °C/W and must be mounted with the exposed paddle soldered to a large copper ground plane using ≥6 thermal vias. For continuous operation at +85°C ambient, derating is required above 2.7 W dissipation, and forced-air cooling or heatsinking is recommended above 2 W.
Is HMC452ST89 pin-compatible with HMC452ST89E?
Yes, the HMC452ST89 and HMC452ST89E share identical pinout, electrical specifications, and SOT-89 mechanical outline. The only difference is RoHS compliance: HMC452ST89E uses 100% matte tin lead finish and 260°C peak reflow, while HMC452ST89 uses Sn/Pb and 235°C reflow.
Can HMC452ST89 operate at 3.5 GHz for CBRS applications?
No, the HMC452ST89 is characterized and specified only from 0.4 to 2.2 GHz. At 3.5 GHz, gain drops below 3 dB and OIP3 degrades significantly; it is not validated for CBRS band operation. For 3.5 GHz, consider Analog Devices' HMC451LP3E or Qorvo QPL9057 instead.
108712-HMC452ST89 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 1.9GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC452ST89
108712-HMC452ST89 FAQ
1.How can I place an order for 108712-HMC452ST89 through Aetrix?
Please submit a Request for Quotation (RFQ) for 108712-HMC452ST89 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 108712-HMC452ST89 reliable?
The price and inventory of 108712-HMC452ST89 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 108712-HMC452ST89 is usually 5 days.
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5.How can I obtain technical support or documentation for 108712-HMC452ST89?
For technical support, including 108712-HMC452ST89 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 108712-HMC452ST89 requirements.
6.How does Aetrix verify that 108712-HMC452ST89 is sourced from the original manufacturer or authorized distributors?
All 108712-HMC452ST89 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 108712-HMC452ST89 meets industry standards.
7.What is the process for return or replacement of 108712-HMC452ST89?
All 108712-HMC452ST89 units undergo pre-shipment inspection (PSI). If there is an issue with 108712-HMC452ST89, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 108712-HMC452ST89 part is unused and in its original packaging.
Return procedure for 108712-HMC452ST89:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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