My Inquiry
My Account
Analog Devices Inc. 108715-HMC452QS16G
- Part No.:
- 108715-HMC452QS16G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
108715-HMC452QS16G.pdf
- Description:
- BOARD EVAL HMC452QS16 900MHZ
- Quantity:
- Payment:
- Shipping:
Inventory:1,330
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HMC452QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1 W RF power amplifier operating from 0.4 to 2.2 GHz, delivering 31 dBm saturated output power, 22.5 dB gain at 400 MHz, and +48 dBm output IP3 at 2.1 GHz with 53% PAE at +31 dBm Pout. It serves as a high-linearity driver stage in cellular base station front-ends and fixed wireless transmitters.
For engineers reviewing the HMC452QS16G datasheet, HMC452QS16G pinout, HMC452QS16G application, or HMC452QS16G equivalent, key selection criteria include its QSOP16G package footprint, single +5 V supply operation, integrated VPD power control, broadband 0.4–2.2 GHz coverage, and verified W-CDMA/CDMA2000 channel power performance.
Technical Context
The HMC452QS16G employs a two-stage monolithic GaAs InGaP HBT architecture optimized for high dynamic range and linearity across multiple cellular bands. Its input and output are DC-coupled, requiring external matching networks per frequency band - confirmed by application circuits for 400 MHz, 900 MHz, 1900 MHz, and 2100 MHz.
Power control is implemented via the VPD pin, enabling full shutdown or precise bias current adjustment (Icq = 485 mA nominal), directly modulating gain, P1dB, Psat, and OIP3 without altering RF path components. Thermal resistance is 24.1 °C/W junction-to-ground paddle, supporting operation from –40 °C to +85 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.2 GHz continuous coverage; supports GSM, CDMA, W-CDMA, and LTE FDD bands without re-tuning. |
| Small-Signal Gain | 22.5 dB @ 400 MHz, 9 dB @ 2100 MHz; enables flexible gain distribution in multi-stage transmit chains. |
| Saturation Power (Psat) | 31.5 dBm typical @ 2100 MHz; delivers 1 W RF output into 50 Ω with minimal compression. |
| OIP3 | +48 dBm @ 2100 MHz (two-tone, –10 dBm/tone, 1 MHz spacing); ensures low adjacent-channel interference in wideband systems. |
| PAE | 53% @ +31 dBm Pout, +5 V supply; reduces thermal load and DC power consumption in battery- or thermally constrained designs. |
| Supply Current (Icq) | 485 mA @ VPD = +5 V; stable quiescent point enables predictable thermal design and supply rail sizing. |
| Noise Figure | 7 dB typical @ 400–2100 MHz; suitable for driver-amplifier role where noise contribution is secondary to linearity. |
Pinout & Package
Package: QSOP16G - 16-lead plastic quad small-outline package (29.4 mm² footprint), exposed ground paddle, MSL1 rating, Sn/Pb lead finish (HMC452QS16G variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5, 7–10, 13–16 | GND | RF/DC ground terminals; all must be soldered to PCB ground plane and connected to exposed paddle for optimal thermal and RF performance. |
| 3 | VPD | Power control voltage input; sets Icq from 0 mA (shutdown) to 485 mA (full power); requires clean +5 V or adjustable bias source. |
| 6 | RFIN | DC-coupled RF input; requires off-chip matching network (e.g., L/C network) for 50 Ω impedance transformation per band. |
| 11, 12 | RFOUT | RF output and DC bias feed for final stage; dual function requires external RF choke or bias tee; matching network required for 50 Ω output. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Power Control (VPD) | Enables digital or analog bias adjustment of Icq and RF output power without changing external components or layout. |
| Single +5 V Supply Operation | Eliminates need for dual-rail or negative supplies; simplifies power management and reduces BOM count in compact RF modules. |
| High Output IP3 (+48 dBm) | Meets stringent ACLR requirements for W-CDMA and CDMA2000 base stations without digital predistortion overhead. |
| DC-Coupled I/O | Supports direct connection to preceding LNA or succeeding filter; avoids blocking capacitors that limit low-frequency response or add parasitics. |
| Exposed Ground Paddle | Provides low-thermal-resistance path (24.1 °C/W) to PCB heatsink; essential for sustained 1 W operation at +85 °C ambient. |
Applications
| Cellular Base Station Driver | Fixed Wireless Access Transmitter |
|---|---|
Use Scenario: Final driver stage before power amplifier in macrocell BTS covering 400–2200 MHz bands. IC Role / Device Role / Timing Role: Linear RF power amplifier providing gain, output power, and linearity between upconverter and PA. Use Value: Delivers +31 dBm Psat and +48 dBm OIP3 at 2100 MHz, enabling compliant W-CDMA ACLR (–45 dBc) with minimal digital correction. | Use Scenario: Transmit chain in 2.5 GHz WiMAX or 3.5 GHz BWA subscriber unit requiring high efficiency and spectral purity. IC Role / Device Role / Timing Role: High-dynamic-range driver amplifier operating in licensed ISM bands with variable output control. Use Value: VPD-based power scaling allows adaptive output from <0 dBm to +31 dBm while maintaining >40 dBm OIP3 across temperature. |
| CDMA2000 Mobile Infrastructure | GSM/EDGE Repeaters |
Use Scenario: Forward-link transmitter in CDMA2000 base station equipment operating at 1960 MHz. IC Role / Device Role / Timing Role: Linearity-critical RF power amplifier ensuring low ACPR (–45 dBc) under multi-carrier conditions. Use Value: Achieves +24 dBm channel power at –45 dBc ACPR with 53% PAE, reducing cooling requirements and power supply size. | Use Scenario: Bidirectional repeater unit amplifying GSM 900/1800 MHz signals in rural coverage extension. IC Role / Device Role / Timing Role: Broadband driver amplifier handling both uplink and downlink paths with stable gain over temperature. Use Value: 22.5 dB gain @ 400 MHz and 9 dB @ 2100 MHz covers full 0.4–2.2 GHz range; ±0.02 dB/°C gain stability minimizes calibration needs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPA2211 | Wider bandwidth (0.6–2.7 GHz), higher Psat (+33 dBm), GaN process; requires +28 V supply and external gate bias. | Targeted at higher-power macro base stations; not drop-in due to voltage, pinout, and thermal interface differences. | Select for >1 W output or extended upper-band coverage; avoid if +5 V supply and QSOP footprint are mandatory. |
| Analog Devices HMC451LP3E | Same InGaP HBT process, 3 mm × 3 mm SMT package, 0.7–2.7 GHz range; lower Psat (+28 dBm), no VPD control. | Used in space-constrained portable infrastructure; lacks analog power control and broadband low-end (0.4 GHz) support. | Select when board area is critical and 0.4 GHz operation is unnecessary; avoid when VPD-based power management is required. |
Compared with QPA2211 and HMC451LP3E, the HMC452QS16G uniquely balances 0.4 GHz low-end coverage, +5 V compatibility, VPD controllability, and QSOP16G footprint - making it optimal for cost-sensitive, thermally managed, multi-band driver applications where layout reuse matters.
Availability
HMC452QS16G is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and CDMA2000 repeater designs requiring stable component supply, consistent RF performance across temperature, and long-term obsolescence mitigation.
Supply support for HMC452QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, including GaAs and GaN MMICs for communications and defense.
The HMC452QS16G belongs to Hittite's linear & power amplifier product line, designed specifically for high-efficiency, high-linearity driver stages in multi-standard wireless infrastructure equipment.
FAQ
What is the absolute maximum RF input power rating for the HMC452QS16G?
The HMC452QS16G has an absolute maximum RF input power rating of +31 dBm when Vs = Vpd = +5 Vdc, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the InGaP HBT transistor cells. For reliable operation, input power should remain ≤ +20 dBm in typical linear amplifier configurations to avoid compression or distortion.
Does the HMC452QS16G require external matching components, and why?
Yes, the HMC452QS16G requires external matching components on both RFIN (Pin 6) and RFOUT (Pins 11–12) because its internal I/O impedances are not 50 Ω. The datasheet provides validated component values (e.g., C1/C2 = 12 pF, L1 = 47 nH) for 400 MHz operation, and matching must be re-optimized per target band (e.g., 900 MHz, 2100 MHz) to maintain gain, return loss, and linearity.
How does the VPD pin affect the HMC452QS16G's RF performance?
The VPD pin controls collector quiescent current (Icq), which directly scales gain, P1dB, Psat, and OIP3. At VPD = +5 V, Icq = 485 mA and full performance is achieved; reducing VPD lowers Icq and RF output power linearly. This enables analog power control or complete shutdown (VPD = 0 V), but gain flatness and linearity degrade below nominal bias.
Is the HMC452QS16G RoHS-compliant, and what is the difference between HMC452QS16G and HMC452QS16GE?
The HMC452QS16G uses Sn/Pb lead finish and is not RoHS-compliant; the HMC452QS16GE variant features 100% matte tin plating and meets RoHS requirements. Both share identical electrical specifications and QSOP16G packaging, but differ in MSL peak reflow temperature (235 °C vs. 260 °C) and marking (H452XXXX).
What thermal management is required for continuous 1 W operation of the HMC452QS16G?
For continuous 1 W operation at +85 °C ambient, the HMC452QS16G requires soldering all GND pins and the exposed ground paddle to a multilayer PCB with ≥6 thermal vias (0.3 mm diameter) connecting to an internal ground plane, plus mounting on a heatsink. Its thermal resistance is 24.1 °C/W junction-to-paddle, so junction temperature will reach ~105 °C under full load - staying safely below the 150 °C absolute max.
108715-HMC452QS16G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 900MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC452QS16G
108715-HMC452QS16G FAQ
1.How can I place an order for 108715-HMC452QS16G through Aetrix?
Please submit a Request for Quotation (RFQ) for 108715-HMC452QS16G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 108715-HMC452QS16G reliable?
The price and inventory of 108715-HMC452QS16G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 108715-HMC452QS16G is usually 5 days.
3.What payment methods are accepted for 108715-HMC452QS16G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 108715-HMC452QS16G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 108715-HMC452QS16G?
108715-HMC452QS16G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 108715-HMC452QS16G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 108715-HMC452QS16G?
For technical support, including 108715-HMC452QS16G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 108715-HMC452QS16G requirements.
6.How does Aetrix verify that 108715-HMC452QS16G is sourced from the original manufacturer or authorized distributors?
All 108715-HMC452QS16G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 108715-HMC452QS16G meets industry standards.
7.What is the process for return or replacement of 108715-HMC452QS16G?
All 108715-HMC452QS16G units undergo pre-shipment inspection (PSI). If there is an issue with 108715-HMC452QS16G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 108715-HMC452QS16G part is unused and in its original packaging.
Return procedure for 108715-HMC452QS16G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
108715-HMC452QS16G Tags
-
113991054
Seeed Technology Co., Ltd
-
SC0918
Raspberry Pi
-
113991114
Seeed Technology Co., Ltd
-
ESP32-C6-DEVKITM-1-N4
Espressif Systems
-
ESP32-DEVKITM-1
Espressif Systems
-
C008
M5Stack Technology Co., Ltd.
-
ESP32-C3-DEVKITC-02
Espressif Systems
-
ESP32-C6-DEVKITC-1-N8
Espressif Systems
-
DFR0478
DFRobot
-
102010448
Seeed Technology Co., Ltd
-
ESP32-DEVKITC-32E
Espressif Systems
-
ESP32-DEVKITC-32UE
Espressif Systems
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
