Analog Devices Inc. 108721-HMC453QS16G
- Part No.:
- 108721-HMC453QS16G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
108721-HMC453QS16G.pdf
- Description:
- EVAL BOARD HMC453QS16GE
- Quantity:
- Payment:

- Shipping:

Inventory:3,018
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Product details
Overview
HMC453QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1.6 W RF power amplifier optimized for 0.4–2.2 GHz operation, delivering 21.5 dB gain at 400 MHz and +51 dBm output IP3 at 2.1 GHz with 45% PAE at +32 dBm Pout. It operates from a single +5 V supply and integrates power control (VPD) for RF output power/current adjustment, targeting cellular infrastructure and fixed wireless transmitters.
For engineers reviewing the HMC453QS16G datasheet, HMC453QS16G pinout, HMC453QS16G application, or HMC453QS16G equivalent, this page provides verified specifications, QSOP16G package details, functional pin roles, real-world use cases in CDMA2000 and W-CDMA systems, and validated alternative amplifiers for frequency-agile RF front-end design.
Technical Context
The HMC453QS16G employs a monolithic GaAs InGaP HBT process to achieve high linearity and efficiency across multi-band operation. Its broadband architecture supports discrete band-tuned matching networks-verified at 400 MHz, 470 MHz, 900 MHz, 1900 MHz, and 2100 MHz-with gain flatness maintained via internal bias stability and temperature-compensated VPD control.
It features DC-coupled RFIN and RFOUT pins requiring external matching, integrated ground paddle for thermal management, and a 16-pin QSOP package with 10 dedicated GND terminals for low-inductance RF grounding. The VPD pin enables precise current scaling from full-power operation down to deep standby, supporting dynamic power management in multi-standard base stations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.2 GHz: Covers GSM/EDGE, CDMA, W-CDMA, PCS, ISM, and WLL bands without reconfiguration. |
| Small-Signal Gain | 21.5 dB @ 400 MHz / 8 dB @ 2100 MHz: Enables flexible gain staging across low- and high-band deployments. |
| OIP3 | +51 dBm @ 2100 MHz: Supports high-linearity W-CDMA and LTE uplink with >45 dBc ACPR compliance. |
| P1dB Output Power | +32 dBm @ 2100 MHz: Delivers 1.6 W saturated RF output suitable for macro/microcell PA stages. |
| PAE | 45% @ +32 dBm Pout: Reduces thermal load and DC power consumption in continuous-wave and modulated operation. |
| Supply Voltage | +5 V single supply: Simplifies system power architecture and eliminates need for dual-rail biasing. |
| Control Interface | VPD pin: Enables analog power-down and linear RF output power control without external DAC or switching circuitry. |
Pinout & Package
Package: QSOP16G - 16-lead plastic surface-mount package with exposed ground paddle (29.4 mm² footprint), MSL1 rating, Sn/Pb lead finish, and thermal resistance of 17.1 °C/W (junction-to-paddle).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5, 7–10, 13–16 | GND | RF/DC ground connections; all must be soldered to PCB ground plane with multiple vias for low-impedance return path. |
| 3 | VPD | Power control input: 0–5 V adjusts collector quiescent current (Icq) and RF output power; 5 V = full power mode. |
| 6 | RFIN | DC-coupled RF input requiring off-chip matching network (e.g., 47 nH + 12 pF at 400 MHz) for 50 Ω interface. |
| 11, 12 | RFOUT | RF output and DC bias feed for final stage; requires external matching and DC blocking before antenna/interface. |
Key Features
| Feature | Design Value |
|---|---|
| InGaP HBT Process | Enables high fT/fmax, superior reliability, and stable performance over -40°C to +85°C operating range. |
| Integrated VPD Control | Eliminates need for external current-sense resistors or digital control logic; supports analog power ramping and sleep modes. |
| High OIP3 + PAE Trade-off | +51 dBm IP3 at 2.1 GHz with 45% efficiency enables simultaneous linearity and thermal efficiency in compact PA designs. |
| Multi-Band Validation | Characterized and application-circuited across five bands (400/470/900/1900/2100 MHz), reducing RF validation effort for multi-standard radios. |
| Exposed Ground Paddle | Provides low-thermal-resistance path (17.1 °C/W) to PCB heatsink, enabling sustained 1.6 W RF output without derating at +85°C ambient. |
Applications
| Cellular Base Station Transmitter | Fixed Wireless Access (FWA) CPE |
|---|---|
Use Scenario: Final-stage PA in outdoor small-cell BTS covering 1900–2170 MHz W-CDMA/LTE bands. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power amplifier driving antenna interface with <−45 dBc ACPR. Use Value: Delivers +32 dBm P1dB and +51 dBm OIP3 at 2.1 GHz, meeting 3GPP spectral mask requirements while maintaining 45% PAE under modulated signal conditions. | Use Scenario: Transmit chain in point-to-multipoint WLL base station operating at 2.1–2.2 GHz. IC Role / Device Role / Timing Role: Linear driver amplifier boosting signal to 1.6 W before diplexer and antenna feed. Use Value: Broadband 0.4–2.2 GHz coverage allows reuse across multiple FWA frequency allocations; QSOP16G package supports high-density RF layout with minimal board area. |
| CDMA2000 Mobile Infrastructure | ISM Band Industrial Transmitter |
Use Scenario: Forward-link PA in CDMA2000 base station operating at 1960 MHz with 9-channel modulation. IC Role / Device Role / Timing Role: High-dynamic-range power amplifier delivering +25 dBm channel power at −45 dBc ACP. Use Value: Confirmed +25 dBm CDMA2000 channel power at −45 dBc adjacent channel power ratio, meeting TIA/EIA-98 standards without external predistortion. | Use Scenario: RF exciter in industrial telemetry transmitter using 902–928 MHz ISM band. IC Role / Device Role / Timing Role: Wideband PA providing 21.5 dB gain and +32 dBm P1dB for robust long-range link budget. Use Value: 21.5 dB gain at 900 MHz and 12 dB input return loss enable stable 50 Ω system integration with minimal external tuning components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC451LP3 | 3 W Psat, 0.7–2.7 GHz, SOT-363 package, no VPD control, lower gain (17 dB @ 2 GHz) | Higher output power but less integrated control; suited for simpler, fixed-gain PA stages | Select when higher Psat is required and analog power control is unnecessary |
| QPL9057 | 2.5 W Psat, 0.6–2.7 GHz, 16-pin QFN, integrated active bias, 50 Ω matched I/O | Reduced external component count but narrower low-end bandwidth (starts at 600 MHz) | Select when board space is constrained and 600+ MHz operation suffices |
Compared with HMC453QS16G, HMC451LP3 offers higher saturated power but lacks VPD-based power control and has lower gain; QPL9057 simplifies matching with 50 Ω I/O but omits sub-600 MHz support critical for GSM/CDMA legacy bands.
Availability
HMC453QS16G is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and ISM-band industrial transmitters requiring stable component supply, extended temperature operation (-40°C to +85°C), and high-reliability RF power delivery.
Supply support for HMC453QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, specializing in microwave/mmWave ICs for communications, defense, and instrumentation.
The HMC453QS16G belongs to Hittite's linear & power amplifier product line, designed specifically for broadband, high-efficiency RF power amplification in multi-standard wireless infrastructure equipment.
FAQ
What is the absolute maximum RF input power rating for the HMC453QS16G?
The HMC453QS16G has an absolute maximum RF input power rating of +32 dBm when Vs = Vpd = +5 Vdc, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the InGaP HBT transistor junctions. For reliable operation, input drive should remain ≤ +10 dBm in typical linear amplifier configurations to avoid compression or distortion.
Does the HMC453QS16G require external matching components?
Yes, the HMC453QS16G requires external matching components on both RFIN (Pin 6) and RFOUT (Pins 11–12). The datasheet provides validated 400 MHz, 470 MHz, 900 MHz, 1900 MHz, and 2100 MHz application circuits with specific capacitor, inductor, and microstrip values. No internal matching is integrated; all impedance transformation is performed externally to optimize performance per band.
What is the thermal resistance and recommended PCB layout for heat dissipation of the HMC453QS16G?
The HMC453QS16G has a junction-to-ground-paddle thermal resistance of 17.1 °C/W. To maintain safe junction temperature, the exposed ground paddle must be soldered to a large copper pour connected via ≥6 thermal vias (0.3 mm diameter) to internal/external ground planes. The evaluation board (110863) uses Rogers 4350B substrate and recommends mounting to an external heatsink for continuous 1.6 W operation above +60°C ambient.
Can the HMC453QS16G operate below 400 MHz, such as at 350 MHz?
No validated performance data exists below 400 MHz for the HMC453QS16G. The datasheet specifies operation from 0.4–2.2 GHz, with characterization and application circuits provided only at ≥400 MHz bands (400, 470, 900, 1900, 2100 MHz). Attempting operation at 350 MHz may result in degraded gain, return loss, and IP3 due to unoptimized internal device parasitics and external matching limitations.
How does the VPD pin affect quiescent current and RF output power in the HMC453QS16G?
The VPD pin directly controls collector quiescent current (Icq), which scales RF output power and linearity. At VPD = +5 V, Icq = 725 mA and P1dB = +32 dBm; reducing VPD lowers Icq linearly (e.g., ~12 mA/V), decreasing P1dB and OIP3 while improving PAE at back-off. This enables analog power control without changing DC supply voltage or adding external bias circuitry.
108721-HMC453QS16G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 1.71GHz ~ 1.99GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC453QS16GE
108721-HMC453QS16G FAQ
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7.What is the process for return or replacement of 108721-HMC453QS16G?
All 108721-HMC453QS16G units undergo pre-shipment inspection (PSI). If there is an issue with 108721-HMC453QS16G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 108721-HMC453QS16G part is unused and in its original packaging.
Return procedure for 108721-HMC453QS16G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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