Analog Devices Inc. 109185-HMC471MS8G
- Part No.:
- 109185-HMC471MS8G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
109185-HMC471MS8G.pdf
- Description:
- BOARD EVAL HMC471MS8GE
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
HMC471MS8G from Analog Devices (formerly Hittite Microwave) is a SiGe HBT dual-channel RF/IF gain block MMIC amplifier operating from DC to 5 GHz, delivering 20 dB gain, +20 dBm P1dB, and +34 dBm OIP3 at 850 MHz per channel with 80 mA supply current at +8 V - used as cascadable 50 Ω gain stages, LO drivers, or combined via 90° hybrids for high-linearity driver amplification in wireless infrastructure.
For engineers reviewing the HMC471MS8G datasheet, HMC471MS8G pinout, HMC471MS8G application, or HMC471MS8G equivalent, key selection criteria include dual-channel isolation, broadband DC–5 GHz small-signal gain flatness, temperature-stable biasing with external RBias, and MSOP-8 package compatibility with RF layout best practices including paddle grounding and external DC blocking.
Technical Context
The HMC471MS8G integrates two independent SiGe HBT gain blocks in a monolithic MMIC structure, each with DC-coupled inputs and RF/DC-combined outputs (RFOUT1/RFOUT2 serving as both RF output and VCC bias nodes). Bias stability is achieved via external RBias (e.g., 39 Ω at +8 V), enabling fixed ICQ = 80 mA across –40°C to +85°C.
It supports three operational modes: independent single-channel amplification, cascaded two-stage gain, or balanced operation using external 90° hybrids - where combined dual-channel configuration achieves up to +21 dBm P1dB and +36 dBm OIP3 through 4 GHz. Cross-channel isolation exceeds –20 dB from DC to 5 GHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | DC to 5 GHz - enables baseband, IF, and RF amplification without band switching. |
| Gain (Typ.) | 20 dB @ 850 MHz - provides stable, cascadable 50 Ω gain with ±2.5 dB variation from DC–1 GHz. |
| P1dB Output Power | +20 dBm @ 850 MHz - delivers linear drive capability for LO distribution or PA pre-driver stages. |
| OIP3 | +34 dBm @ 850 MHz (Pout = 0 dBm/tone) - ensures low intermodulation distortion in multi-carrier systems. |
| Noise Figure | 3.25 dB @ DC–4 GHz - suitable for receiver front-end or low-noise IF gain applications. |
| Supply Current | 80 mA @ VS = +8 V - sets predictable power budget; adjustable via RBias for 6–12 V operation. |
| Cross-Channel Isolation | >–20 dB @ DC–5 GHz - prevents signal coupling between channels in dual-path architectures. |
Pinout & Package
Package: 8-lead MSOP (14.9 mm²), thermally enhanced with exposed ground paddle requiring solder connection to PCB RF/DC ground plane. Lead finish: Sn/Pb; MSL1 rating; max reflow 235 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFIN1) | DC-coupled RF input, Channel 1 | Requires external DC-blocking capacitor; direct connection to baseband/IF source possible. |
| 2, 3, 6, 7 (N/C) | No-connect terminals | May be tied to RF ground without performance impact; aids thermal/mechanical stability. |
| 4 (RFIN2) | DC-coupled RF input, Channel 2 | Independent of Channel 1; enables true dual-path signal processing. |
| 5 (RFOUT2) | RF output & DC bias node, Channel 2 | Supplies VCC2; requires external RF choke or bias tee for DC feed while passing RF. |
| 8 (RFOUT1) | RF output & DC bias node, Channel 1 | Supplies VCC1; same biasing architecture as Pin 5 - supports symmetrical dual-channel design. |
| Ground Paddle | Primary thermal & RF ground path | Mandatory solder connection to solid ground plane; critical for S-parameter stability and thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent SiGe HBT gain blocks | Enables flexible RF architecture: separate gain stages, cascaded amplification, or hybrid-combined high-linearity mode. |
| DC–5 GHz bandwidth per channel | Eliminates need for multiple narrowband amplifiers across cellular, WLAN, and microwave radio bands. |
| +34 dBm OIP3 @ 850 MHz | Supports high-order modulation (e.g., 256-QAM) in multi-carrier base stations with minimal ACPR degradation. |
| 80 mA ICQ at +8 V with external RBias | Allows precise bias control and thermal compensation - e.g., 39 Ω resistor maintains 80 mA from –40°C to +85°C. |
| –40°C to +85°C operating range | Validated for industrial and outdoor wireless infrastructure deployments without derating below +85°C. |
Applications
| Cellular Base Station Transceiver | WLAN 5 GHz Front-End Driver |
|---|---|
|
Use Scenario: Dual-channel amplification of I/Q modulated signals prior to upconversion in macrocell BTS transceivers. IC Role / Device Role / Timing Role: LO driver and IF gain block for quadrature transmitter paths. Use Value: 20 dB gain and +34 dBm OIP3 ensure EVM compliance under multi-tone LTE/5G NR conditions up to 3.8 GHz. |
Use Scenario: Boosting 5.15–5.85 GHz OFDM signals before power amplification in enterprise AP RF front-ends. IC Role / Device Role / Timing Role: High-linearity RF driver stage operating in upper UNII bands. Use Value: >10 dB gain flatness from 4–5 GHz and –20 dB cross-channel isolation prevent I/Q crosstalk in MIMO systems. |
| CATV Optical Node Driver | Test Equipment Signal Generator Output Stage |
|
Use Scenario: Amplifying 54–1002 MHz DOCSIS downstream signals driving EML lasers in fiber-deep nodes. IC Role / Device Role / Timing Role: Broadband 50 Ω gain block interfacing DAC output to optical modulator driver. Use Value: DC–1 GHz gain ≥18.5 dB and <0.012 dB/°C gain drift maintain CNR stability over environmental temperature swings. |
Use Scenario: Final-stage amplification of synthesized RF tones in benchtop signal generators (e.g., Keysight PXA). IC Role / Device Role / Timing Role: Low-distortion, wide-dynamic-range output driver for calibration-grade sources. Use Value: +21 dBm combined P1dB and +36 dBm OIP3 support clean multi-tone generation up to 4 GHz for spectrum analyzer verification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel RF gain block applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC472MS8G | Same MSOP-8 package; higher gain (22 dB) but lower OIP3 (+31 dBm) and narrower bandwidth (DC–3 GHz). | Better suited for low-distortion, narrowband IF gain where linearity beyond 3 GHz is not required. | Select when prioritizing gain flatness below 3 GHz over wideband OIP3 performance. |
| QPL9057 | Single-channel GaAs pHEMT; 20 dB gain, +22 dBm P1dB, +40 dBm OIP3, 0.6–6.0 GHz; 2×2 mm DFN. | Lacks dual-channel integration; requires two devices and external combining for balanced operation. | Choose when maximum OIP3 (>+40 dBm) and extended 6 GHz coverage outweigh dual-channel convenience. |
Compared with HMC471MS8G, HMC472MS8G trades bandwidth and linearity for higher gain in sub-3 GHz bands, while QPL9057 offers superior OIP3 and frequency reach but demands discrete dual-channel implementation and increases board area by ~3×.
Availability
HMC471MS8G is available at Aetrix Electronics and suitable for cellular base station transceivers, WLAN 5 GHz front-ends, and CATV optical node drivers requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.
Supply support for HMC471MS8G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF/Microwave portfolio into precision analog and RF solutions for communications, defense, and instrumentation.
The HMC471MS8G belongs to the Hittite legacy Driver & Gain Block Amplifiers product line, engineered for broadband, high-linearity RF signal conditioning in wireless infrastructure and test equipment.
FAQ
What is the recommended bias resistor value for HMC471MS8G at +10 V supply?
The recommended bias resistor value for HMC471MS8G at +10 V supply is 62 Ω to maintain ICQ ≈ 80 mA, calculated as RBias = (VS − VCC) / ICQ. This value ensures stable DC biasing across temperature and matches the 62 Ω specification in the datasheet's Recommended Bias Resistor Values table for +10 V operation. The HMC471MS8G requires this external resistor to set collector current accurately and preserve gain and linearity performance.
Does HMC471MS8G support DC-coupled operation on both inputs?
Yes, HMC471MS8G supports DC-coupled operation on both RFIN1 (Pin 1) and RFIN2 (Pin 4), as confirmed in the Pin Descriptions section. However, external DC-blocking capacitors are mandatory on both inputs to prevent DC offset from affecting upstream circuitry. The HMC471MS8G's internal DC biasing is self-contained via RFOUT pins, making it compatible with baseband and IF signal chains requiring true DC coupling capability.
What is the thermal resistance junction-to-ground paddle for HMC471MS8G?
The thermal resistance junction-to-ground paddle for HMC471MS8G is 30.7 °C/W, as specified in the Absolute Maximum Ratings table. This value assumes proper soldering of the exposed ground paddle to a multilayer PCB ground plane with adequate thermal vias. Effective thermal management using this parameter ensures the HMC471MS8G operates within its 150 °C maximum junction temperature limit under full 2.12 W power dissipation at 85 °C ambient.
Can HMC471MS8G be used in balanced (push-pull) configuration?
Yes, HMC471MS8G can be used in balanced configuration by feeding inputs through a 90° hybrid and combining outputs via another 90° hybrid, as shown in the Application Circuit for Balanced Operation. In this mode, the HMC471MS8G delivers up to +21 dBm P1dB and +36 dBm OIP3 through 4 GHz - a documented performance enhancement over single-channel use, enabled by its matched dual-channel architecture and >–20 dB cross-channel isolation.
Is HMC471MS8G RoHS-compliant?
No, HMC471MS8G is not RoHS-compliant; it uses Sn/Pb lead finish and is rated MSL1 with a max peak reflow temperature of 235 °C. The RoHS-compliant variant is HMC471MS8GE, which features 100% matte tin finish and 260 °C reflow tolerance. Both share identical electrical specifications and pinout, but HMC471MS8G must be processed using leaded solder profiles - a critical distinction for HMC471MS8G in manufacturing flow planning.
109185-HMC471MS8G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 0Hz ~ 5GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC471MS8G
109185-HMC471MS8G FAQ
1.How can I place an order for 109185-HMC471MS8G through Aetrix?
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6.How does Aetrix verify that 109185-HMC471MS8G is sourced from the original manufacturer or authorized distributors?
All 109185-HMC471MS8G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 109185-HMC471MS8G meets industry standards.
7.What is the process for return or replacement of 109185-HMC471MS8G?
All 109185-HMC471MS8G units undergo pre-shipment inspection (PSI). If there is an issue with 109185-HMC471MS8G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 109185-HMC471MS8G part is unused and in its original packaging.
Return procedure for 109185-HMC471MS8G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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