Analog Devices Inc. 109712-HMC442LC3B
- Part No.:
- 109712-HMC442LC3B
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
109712-HMC442LC3B.pdf
- Description:
- BOARD EVAL HMC442LC3B
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
HMC442LC3B from Analog Devices (formerly Hittite Microwave) is a GaAs PHEMT MMIC medium power amplifier operating from 17.5 to 25.5 GHz, delivering 13 dB small-signal gain, +23 dBm saturated output power at 26% PAE with +5 V supply, and 50 Ω input/output matching - used as a driver for SMT mixers in millimeter-wave radio systems.
For engineers reviewing the HMC442LC3B datasheet, HMC442LC3B pinout, HMC442LC3B application, or HMC442LC3B equivalent, key selection criteria include its 17.5–25.5 GHz bandwidth, temperature-stable gain variation (±0.03 dB/°C), RoHS-compliant 3×3 mm SMT package, and gate bias tuning requirement (Vgg = −1.5 to −0.5 V) to achieve 84 mA quiescent current.
Technical Context
The HMC442LC3B employs a single-stage GaAs PHEMT architecture optimized for linear operation across three frequency sub-bands (17.5–21.0, 21.0–24.0, 24.0–25.5 GHz), with integrated DC blocking on RFIN and RFOUT pins and no external matching components required. Its 50 Ω matched I/O enables direct cascade into mixer LO ports or adjacent gain stages.
Thermal design is enabled by an alumina package with exposed ground paddle (thermal resistance 183 °C/W), rated for −40 to +85 °C operation and MSL3 reflow compatibility. Bias control via Vgg adjusts Id to maintain 84 mA under varying temperature and supply conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 17.5–25.5 GHz - covers E-band uplink/downlink and military EW bands without band switching. |
| Small-Signal Gain | 13 dB typical - provides stable linear gain across full band, enabling predictable cascade analysis. |
| Saturation Power (Psat) | +23 dBm - supports high-output drive capability for mixer LO injection or final stage amplification. |
| Power-Added Efficiency | 26% at Psat - reduces thermal load and power supply demand in compact mmWave modules. |
| Noise Figure | 8–9 dB - suitable for driver role where noise contribution is secondary to output power and linearity. |
| Supply Current (Idd) | 84 mA at Vdd = +5 V - defines low-power bias point; adjustable via Vgg to compensate for process/temp drift. |
| Input/Output Matching | 50 Ω - eliminates external matching networks, simplifying PCB layout and reducing insertion loss. |
Pinout & Package
Package: 3 × 3 mm ceramic QFN (alumina body), leadless Pb-free RoHS-compliant, MSL3, with exposed ground paddle requiring solder connection to PCB RF ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 7, 9 | GND | RF/DC ground terminals - must be soldered to top-layer ground pour and connected via multiple vias to internal ground plane. |
| 2 | RFIN | AC-coupled 50 Ω RF input - requires external DC blocking if driven by biased source; no external matching needed. |
| 4, 6, 10, 12 | N/C | No-connect terminals - may be grounded without performance impact; improves mechanical stability and thermal conduction. |
| 5 | Vgg | Gate bias control - adjust between −1.5 V and −0.5 V to set Idd = 84 mA; referenced to ground. |
| 8 | RFOUT | AC-coupled 50 Ω RF output - directly interfaces with mixer LO port or next-stage amplifier without matching. |
| 11 | Vdd | +5 V DC supply - requires local bypassing (C1–C6 per app circuit); sensitive to ripple and noise above 100 MHz. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated 50 Ω matching | Eliminates external matching components, reducing BOM count and layout complexity in mmWave designs. |
| Temperature-stable gain | Gain variation ≤ ±0.03 dB/°C ensures consistent system gain across −40 to +85 °C industrial/military environments. |
| High linearity (IP3) | +26 dBm output IP3 enables use in spectrally dense signals without intermodulation distortion in point-to-point radios. |
| Low-noise driver capability | 8–9 dB noise figure supports clean signal chain when driving sensitive mixer cores like HMC mixers. |
| RoHS-compliant SMT package | 3 × 3 mm leadless QFN enables automated assembly and meets environmental compliance for global deployments. |
Applications
| Point-to-Point Radios | LO Driver for HMC Mixers |
|---|---|
Use Scenario: High-capacity backhaul links operating in 23–24 GHz licensed bands requiring stable gain and high output power. IC Role / Device Role / Timing Role: Medium power driver amplifier boosting IF or RF signal prior to antenna feed. Use Value: Delivers +23 dBm Psat and 13 dB gain within 17.5–25.5 GHz, enabling link budgets up to 120 dB with minimal added noise. |
Use Scenario: Local oscillator path in HMC-based transceivers for satellite comms or radar front-ends. IC Role / Device Role / Timing Role: LO buffer/driver ensuring sufficient power and spectral purity to switch mixer diodes. Use Value: 50 Ω matched I/O and +23 dBm Psat enable direct interface to HMC mixer LO ports without matching networks or amplification stages. |
| Point-to-Multi-Point Radios | Military EW & ECM |
Use Scenario: Base station RF section serving multiple subscriber units in 24 GHz unlicensed spectrum. IC Role / Device Role / Timing Role: Final-stage power amplifier in transmit chain before diplexer and antenna. Use Value: 26% PAE at +5 V reduces heat generation in densely packed outdoor units, while 84 mA Idd eases power management. |
Use Scenario: Jammer transmitter module operating across E-band frequencies for electronic attack. IC Role / Device Role / Timing Role: Wideband driver amplifier in broadband noise or pulse-modulated signal chain. Use Value: Broad 17.5–25.5 GHz coverage and +22 dBm P1dB support rapid frequency agility without retuning or component swaps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar medium power mmWave amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC465LP3E | Wider bandwidth (18–40 GHz), lower Psat (+20 dBm), higher NF (10 dB), same 3×3 mm package. | Better suited for wideband test equipment; less optimal for high-power E-band radios due to lower Psat. | Select HMC465LP3E only when >30 GHz coverage is required and +20 dBm Psat suffices. |
| Qorvo QPA2211 | Higher Psat (+27 dBm), 24–34 GHz range, GaN-based, requires +12 V supply and external matching. | Targets higher-power radar transmitters; incompatible with +5 V-only systems and adds matching complexity. | Choose QPA2211 only when >+23 dBm output and extended upper-frequency margin justify redesign effort. |
Compared with HMC442LC3B, HMC465LP3E trades output power and noise for ultra-wideband coverage, while QPA2211 delivers higher Psat at the cost of voltage compatibility and layout simplicity - making HMC442LC3B optimal for +5 V, 50 Ω-matched, E-band driver applications.
Availability
HMC442LC3B is available at Aetrix Electronics and suitable for point-to-point radios, LO driver circuits, and military EW systems requiring stable component supply, RoHS-compliant packaging, and millimeter-wave performance consistency.
Supply support for HMC442LC3B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF portfolio into precision analog and RF solutions for communications, defense, and instrumentation.
The HMC442LC3B belongs to Hittite's legacy MMIC amplifier product line, designed specifically for compact, high-efficiency driver applications in E-band wireless infrastructure and electronic warfare systems.
FAQ
What is the recommended gate bias voltage range for stable operation of the HMC442LC3B?
The HMC442LC3B requires Vgg between −1.5 V and −0.5 V to achieve the typical supply current of 84 mA at +5 V drain voltage. This adjustment compensates for process and temperature variations. The HMC442LC3B datasheet specifies that Vgg must be referenced to ground and stabilized with low-noise filtering to prevent oscillation or gain drift during operation.
Does the HMC442LC3B require external matching components for 50 Ω system integration?
No, the HMC442LC3B features fully 50 Ω matched input and output ports, eliminating the need for external matching networks. Both RFIN (Pin 2) and RFOUT (Pin 8) are AC-coupled and internally matched, allowing direct connection to SMA connectors or adjacent MMIC stages in a 50 Ω environment - a key advantage confirmed in the HMC442LC3B application circuit and functional description.
What is the maximum allowable RF input power to avoid damage to the HMC442LC3B?
The absolute maximum RF input power for the HMC442LC3B is +16 dBm when operated at Vdd = +5 Vdc and Idd = 85 mA. Exceeding this level risks permanent degradation of the GaAs PHEMT transistor. This rating is specified in the Absolute Maximum Ratings table of the HMC442LC3B datasheet and applies across the full 17.5–25.5 GHz band.
How does the HMC442LC3B perform over temperature, particularly regarding gain stability?
The HMC442LC3B exhibits excellent gain stability over temperature, with gain variation limited to ±0.03 dB/°C across −40 to +85 °C. Measured data shows <0.5 dB total gain deviation from −40 °C to +85 °C at 23 GHz. This stability is achieved through GaAs PHEMT process optimization and is verified in the HMC442LC3B "Gain vs. Temperature" plot on page 2 of the datasheet.
Is the HMC442LC3B pin-compatible with other Hittite amplifier variants such as the HMC442LC3?
No, the HMC442LC3B is not pin-compatible with the older HMC442LC3. While both share the same 3×3 mm footprint and ground pad layout, the HMC442LC3B introduces revised internal biasing and updated thermal design - confirmed by distinct pin function assignments (e.g., dedicated Vgg on Pin 5) and updated MSL3 reflow profile requirements in the HMC442LC3B package documentation.
109712-HMC442LC3B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 17.5GHz ~ 25.5GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC442LC3B
109712-HMC442LC3B FAQ
1.How can I place an order for 109712-HMC442LC3B through Aetrix?
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6.How does Aetrix verify that 109712-HMC442LC3B is sourced from the original manufacturer or authorized distributors?
All 109712-HMC442LC3B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 109712-HMC442LC3B meets industry standards.
7.What is the process for return or replacement of 109712-HMC442LC3B?
All 109712-HMC442LC3B units undergo pre-shipment inspection (PSI). If there is an issue with 109712-HMC442LC3B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 109712-HMC442LC3B part is unused and in its original packaging.
Return procedure for 109712-HMC442LC3B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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