Analog Devices Inc. 109824-HMC452ST89

Overview

HMC452ST89 from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1 W MMIC power amplifier operating from 0.4 to 2.2 GHz in SOT-89 package. It delivers +31 dBm P1dB output, +49 dBm OIP3 at 2.1 GHz, and 50% PAE at +31 dBm, optimized for cellular infrastructure and fixed wireless transmitters.

For engineers reviewing the HMC452ST89 datasheet, HMC452ST89 pinout, HMC452ST89 application, or HMC452ST89 equivalent, key selection criteria include broadband gain flatness (7–21 dB), thermal stability over −40°C to +85°C, single +5 V supply operation, and RF input/output matching requirements for 400 MHz–2100 MHz bands.

Technical Context

The HMC452ST89 integrates a two-stage InGaP HBT amplifier with DC-coupled RFIN and RFOUT pins requiring external matching networks. Its bias network uses a single +5 V supply with 510 mA quiescent current, enabling high linearity without complex bias sequencing.

It achieves >45 dBm OIP3 across multiple bands (400 MHz, 900 MHz, 1900 MHz, 2100 MHz) via internal gain distribution and thermal compensation, supporting CDMA2000, W-CDMA, and GSM/EDGE modulation schemes with ACPR < −45 dBc at 2.14 GHz.

Key Specifications

Pinout & Package

SOT-89 package with exposed paddle for thermal management; requires soldering of all ground pins (2, 4) and paddle to PCB RF ground plane per MSL1 reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPL9057 and SKY65167-360LF, the HMC452ST89 offers superior OIP3 at 2.1 GHz (+49 dBm), lower thermal resistance (24.1 °C/W), and proven field reliability in outdoor macrocell deployments-making it optimal for high-linearity, thermally constrained infrastructure designs.

Availability

HMC452ST89 is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and broadband repeater systems requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for HMC452ST89 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its RF/Microwave product portfolio, specializing in high-performance analog, RF, and mixed-signal ICs for communications, defense, and instrumentation.

The HMC452ST89 belongs to Hittite's legacy GaAs MMIC power amplifier family, designed specifically for high-efficiency, high-linearity transmit paths in cellular base stations and wireless infrastructure equipment.

FAQ

What is the recommended PCB layout for HMC452ST89 to ensure thermal stability?

For optimal thermal performance, the HMC452ST89 exposed paddle and pins 2 and 4 must be soldered to a solid RF ground plane with ≥8 thermal vias (0.3 mm diameter) connecting to inner/outer ground layers. Use Rogers 4350B substrate (10 mil, ε_r = 3.48) for RF traces, and place matching components (C2, L1–L4) within 2 mm of pins. The HMC452ST89 evaluation board 110407 implements this layout.

Does HMC452ST89 require external bias sequencing or can it operate with a simple +5 V supply?

The HMC452ST89 operates with a single +5 V DC supply applied directly to pin 3 (RFOUT), eliminating need for bias sequencing or external regulators. Quiescent current is fixed at 510 mA, and no enable/disable control is provided-power is always active when supply is present. This simplifies design but requires careful thermal management.

What is the maximum RF input power the HMC452ST89 can tolerate without damage?

The absolute maximum RF input power for HMC452ST89 is +31 dBm (1.25 W) when operated at +5 V supply, per the Absolute Maximum Ratings table. Exceeding this level risks permanent degradation of the InGaP HBT transistor, especially under mismatched load conditions. Input protection is not integrated; external limiter or circulator is recommended in high-power TX-RX switch configurations.

How does HMC452ST89 perform in W-CDMA 64 DPCH at 2140 MHz?

At 2140 MHz, the HMC452ST89 delivers +31 dBm P1dB, +49 dBm OIP3, and −45 dBc ACPR for W-CDMA 64 DPCH with 3.84 MHz integration bandwidth. Measured data shows 50% PAE at +31 dBm output and <0.5 dB gain variation from −40°C to +85°C-enabling compliant operation in uncooled outdoor small cells using the HMC452ST89.

Is there a RoHS-compliant version of HMC452ST89, and what are its reflow requirements?

Yes, the HMC452ST89E is the RoHS-compliant variant with 100% matte tin lead finish and MSL1 rating. Its peak reflow temperature is 260°C (vs. 235°C for HMC452ST89), and both variants share identical electrical specifications, pinout, and thermal resistance. The package marking "H452" applies to both versions; lot code distinguishes them.