Analog Devices Inc. 109942-HMC453ST89

Overview

HMC453ST89 from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT monolithic microwave integrated circuit (MMIC) power amplifier optimized for 0.4–2.2 GHz broadband operation. It delivers +32.5 dBm saturated output power, 20.5 dB gain at 400 MHz, and +49 dBm output IP3 at 2.1 GHz with 41% power-added efficiency under +5 V supply. It serves as a high-linearity driver stage in cellular base station front-ends and fixed wireless transmitters.

For engineers reviewing the HMC453ST89 datasheet, HMC453ST89 pinout, HMC453ST89 application, or HMC453ST89 equivalent, key selection criteria include its SOT-89 package compatibility, single-supply +5 V operation, temperature-stable gain variation (≤0.02 dB/°C), and verified W-CDMA/CDMA2000 channel power performance at –45 dBc ACLR.

Technical Context

The HMC453ST89 employs a two-stage InGaP HBT MMIC architecture with on-die biasing and DC-coupled RF ports. Its input and output matching networks are external, enabling frequency-band-specific optimization across five designated bands (400–410, 450–496, 810–960, 1710–1990, and 2010–2170 MHz).

It operates with fixed +5 V collector bias and draws 725 mA quiescent current. Performance is characterized over –40 °C to +85 °C ambient, with thermal resistance of 17.1 °C/W (junction-to-ground paddle), requiring direct soldering of all ground pins and the exposed paddle to PCB RF ground.

Key Specifications

Pinout & Package

The HMC453ST89 is housed in a standard SOT-89 surface-mount package with an exposed ground paddle. All ground pins (2 and 4) and the paddle must be soldered directly to PCB RF ground for thermal and RF performance compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPL9057 and SKY66297-364, the HMC453ST89 provides broader bandwidth (0.4–2.2 GHz), higher Psat (+32.5 dBm), and proven +49 dBm OIP3 at 2.1 GHz - making it preferred for wideband, high-linearity driver roles where external gain control is acceptable.

Availability

HMC453ST89 is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and CDMA2000 base station designs requiring stable component supply, consistent RF performance across temperature, and long-term obsolescence management.

Supply support for HMC453ST89 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, including GaAs and GaN MMICs for communications infrastructure.

The HMC453ST89 belongs to Hittite's legacy InGaP HBT power amplifier family, designed specifically for wideband, high-linearity driver applications in 3G/4G base stations and fixed wireless systems.

FAQ

What is the absolute maximum RF input power rating for the HMC453ST89?

The HMC453ST89 has an absolute maximum RF input power rating of +32 dBm at +5 V supply, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the InGaP HBT transistor cells. For reliable operation, input power should remain ≤+10 dBm in typical small-signal gain applications, with compression point (P1dB) at +29.5 dBm.

Does the HMC453ST89 require external bias sequencing or startup circuitry?

No, the HMC453ST89 does not require external bias sequencing. It operates from a single +5 V supply applied directly to Pin 3 (RFOUT), with internal bias network enabling immediate turn-on. No gate delay, soft-start, or power-up sequencing circuitry is needed - simplifying integration into RF power amplifier modules.

Can the HMC453ST89 be used in 5G NR sub-6 GHz bands such as n78 (3.3–3.8 GHz)?

No, the HMC453ST89 is not characterized or guaranteed for operation above 2.2 GHz. Its gain drops to ~6 dB and OIP3 degrades significantly beyond 2.17 GHz per datasheet data. For n78 band applications, a dedicated 3.3–3.8 GHz amplifier such as Qorvo QPF4559 is required instead of the HMC453ST89.

What is the recommended PCB layout practice for the exposed paddle on the HMC453ST89 SOT-89 package?

The exposed paddle of the HMC453ST89 must be soldered to a solid, low-impedance RF ground plane using ≥9 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) connecting to inner and bottom ground layers. The datasheet mandates direct paddle grounding to achieve the specified 17.1 °C/W thermal resistance and prevent gain drift or compression shift under sustained RF load.

Is the HMC453ST89 RoHS-compliant, and what is its MSL rating?

The HMC453ST89 is not RoHS-compliant; it uses Sn/Pb lead finish and is rated MSL1 with a max peak reflow temperature of 235 °C. For RoHS applications, the pin-compatible HMC453ST89E variant (100% matte Sn, MSL1, 260 °C peak) should be selected - both share identical RF performance and thermal specifications.