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Analog Devices Inc. 109994-HMC453QS16G
- Part No.:
- 109994-HMC453QS16G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
109994-HMC453QS16G.pdf
- Description:
- EVAL BOARD HMC453QS16GE
- Quantity:
- Payment:
- Shipping:
Inventory:3,170
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Product details
Overview
HMC453QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT monolithic microwave integrated circuit (MMIC) power amplifier optimized for 0.4–2.2 GHz RF front-end stages. It delivers 1.6 W saturated output power (Psat = +33 dBm), 21.5 dB gain at 400 MHz, +51 dBm output IP3 at 2.1 GHz, and 45% power-added efficiency at +32 dBm Pout - enabling high-linearity amplification in cellular base station driver stages and fixed wireless transmitters.
For engineers reviewing the HMC453QS16G datasheet, HMC453QS16G pinout, HMC453QS16G application, or HMC453QS16G equivalent, this page provides verified specifications, QSOP-16G package layout, real-world RF performance trade-offs across 400 MHz–2.1 GHz bands, and validated alternative options for CDMA2000, W-CDMA, and ISM-band transmitter designs.
Technical Context
The HMC453QS16G employs a two-stage InGaP HBT architecture with integrated bias control and on-chip thermal management. Its VPD pin enables analog power-down and RF output current scaling without external switching, supporting dynamic range optimization in multi-standard transceivers.
Designed for single +5 V DC operation, it achieves broadband matching via external passive networks (e.g., 47 nH/40 nH inductors and 12 pF/8.2 pF capacitors per 400 MHz reference circuit). Input and output return loss exceeds 10 dB across all operating bands, ensuring stable integration into 50 Ω systems without isolation circulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.2 GHz: Covers GSM/EDGE (400–496 MHz), PCS (1.71–1.99 GHz), and IMT-2000 (2.01–2.17 GHz) bands in a single device. |
| Small-Signal Gain | 21.5 dB @ 400 MHz / 8 dB @ 2100 MHz: Enables flexible gain distribution in multi-stage PA architectures. |
| OIP3 | +51 dBm @ 2100 MHz: Supports W-CDMA ACPR < −45 dBc at +25 dBm channel power without digital predistortion. |
| P1dB | +32 dBm @ 2100 MHz: Delivers linear drive capability for 16-QAM/64-QAM modulated signals in fixed wireless access. |
| PAE | 45% @ +32 dBm Pout: Reduces thermal load and DC power consumption in compact outdoor units. |
| Supply Current | 725 mA @ +5 V: Enables direct integration with standard 5 V system rails; no LDO or charge pump required. |
| Noise Figure | 6.5 dB @ 900 MHz: Suitable as final-stage PA where noise contribution is secondary to linearity and output power. |
Pinout & Package
Package: QSOP-16G (16-lead plastic quad small-outline package), 29.4 mm² footprint, exposed ground paddle for thermal dissipation (θJA = 17.1 °C/W). RoHS-compliant version HMC453QS16GE uses matte Sn finish (MSL1, 260 °C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5, 7–10, 13–16 | GND | RF/DC ground terminals; all must be soldered to PCB ground plane and connected to exposed paddle for thermal and impedance stability. |
| 3 | VPD | Power control input: 0–5 V analog voltage adjusts quiescent current (ICQ) and output power; full 5 V enables max P1dB/IP3. |
| 6 | RFIN | DC-coupled RF input requiring off-chip matching (e.g., 12 pF series cap + 47 nH shunt inductor at 400 MHz). |
| 11, 12 | RFOUT | RF output and DC bias feed point for output stage; requires off-chip output matching network and DC blocking. |
Key Features
| Feature | Design Value |
|---|---|
| InGaP HBT process | High reliability and temperature stability (−40°C to +85°C operation); eliminates GaAs FET gate leakage concerns in long-life infrastructure gear. |
| Integrated VPD control | Enables seamless power ramping and Class-AB-to-Class-B transition without external MOSFET switches or DACs. |
| +5 V single supply | Eliminates need for negative bias rails or complex DC-DC converters in remote radio heads and repeaters. |
| QSOP-16G SMT package | Compatible with standard reflow processes; exposed paddle ensures ≤ 85°C junction temperature at 3.8 W dissipation. |
| 45% PAE at P1dB | Reduces heat sink size by >30% vs. comparable Si LDMOS PAs, lowering BOM cost in space-constrained enclosures. |
Applications
| Cellular Base Station Driver | Fixed Wireless Access Transmitter |
|---|---|
Use Scenario: Final-stage amplification in 4G LTE macrocell remote radio units operating at 2.1 GHz. IC Role / Device Role / Timing Role: High-efficiency, high-linearity driver PA delivering +32 dBm P1dB to feed a final GaN PA stage. Use Value: +51 dBm OIP3 meets 3GPP ACLR requirements for 20 MHz LTE channels without DPD overhead. |
Use Scenario: Outdoor CPE unit transmitting 64-QAM OFDM signals in 3.5 GHz licensed band using upconverted IF path. IC Role / Device Role / Timing Role: IF-stage power amplifier operating at 470 MHz intermediate frequency before upconversion. Use Value: 21.5 dB gain at 470 MHz reduces cascaded noise figure and relaxes LNA linearity requirements. |
| WLL Subscriber Unit | ISM Band Industrial Transmitter |
Use Scenario: Point-to-multipoint subscriber terminal in 2.4 GHz unlicensed band with adaptive modulation. IC Role / Device Role / Timing Role: Linear PA supporting QPSK/16-QAM with dynamic back-off controlled via VPD pin. Use Value: 45% PAE extends battery life in solar-powered rural nodes; VPD enables 20 dB output power range. |
Use Scenario: Industrial telemetry transmitter operating in 915 MHz ISM band with strict spectral mask compliance. IC Role / Device Role / Timing Role: Final PA stage in narrowband FSK/LoRa PHY with +25 dBm channel power. Use Value: +47 dBm OIP3 at 900 MHz suppresses third-order intermodulation in dense sensor deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPA2211 | Wider bandwidth (0.7–2.8 GHz), higher Psat (+35 dBm), but requires dual supply (+5 V/+28 V) and external bias sequencing. | Better suited for wideband active antenna systems; not drop-in due to different pinout and thermal pad layout. | Select QPA2211 only when >2.2 GHz coverage or >+33 dBm P1dB is mandatory; HMC453QS16G remains optimal for cost-sensitive 400–2170 MHz infrastructure. |
| Analog Devices HMC452LP3E | Same InGaP HBT process, lower power (0.5 W), 16-pin QFN (3×3 mm), no VPD control, +42 dBm OIP3 at 2 GHz. | Targeted at portable radios and low-power repeaters; lacks analog power control and thermal robustness of QSOP-16G. | Choose HMC452LP3E for space-constrained handhelds; retain HMC453QS16G for thermally demanding fixed installations requiring VPD-based power management. |
Compared with QPA2211 and HMC452LP3E, the HMC453QS16G uniquely balances 1.6 W output, analog VPD control, and single +5 V operation in a thermally enhanced QSOP package - making it the preferred choice for mid-power infrastructure transmitters where supply simplicity and thermal headroom are critical.
Availability
HMC453QS16G is available at Aetrix Electronics and suitable for cellular base station driver stages, fixed wireless access transmitters, and industrial ISM-band telemetry systems requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for HMC453QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014, integrating its high-frequency RF expertise into a broad portfolio of signal chain solutions for communications, defense, and instrumentation.
The HMC453QS16G belongs to Hittite's legacy MMIC power amplifier product line, specifically engineered for high-efficiency, high-linearity RF power amplification in 400 MHz–2.2 GHz wireless infrastructure equipment.
FAQ
What is the maximum RF input power rating for the HMC453QS16G?
The HMC453QS16G has an absolute maximum RF input power rating of +32 dBm when operated at Vs = VPD = +5 Vdc. Exceeding this level risks permanent damage to the InGaP HBT transistor cells. For reliable operation, input drive should remain ≤ +10 dBm in linear mode and ≤ +20 dBm in compressed operation, per the 400 MHz application circuit guidelines.
Does the HMC453QS16G require external matching components?
Yes, the HMC453QS16G requires external matching networks on both RFIN (Pin 6) and RFOUT (Pins 11–12). The datasheet specifies discrete values - such as 12 pF and 47 nH for 400 MHz input matching - because the device uses DC-coupled ports with no internal matching. These components establish 50 Ω impedance transformation and harmonic suppression.
How does the VPD pin affect performance of the HMC453QS16G?
The VPD pin (Pin 3) directly controls collector quiescent current (ICQ). At +5 V, ICQ = 725 mA and the HMC453QS16G achieves full P1dB (+32 dBm) and OIP3 (+51 dBm). Reducing VPD to 3.3 V lowers ICQ to ~300 mA, reducing P1dB by ~4 dB and OIP3 by ~6 dB - enabling dynamic power scaling for TDD or burst-mode operation without hardware changes.
Is the HMC453QS16G pin-compatible with the HMC453QS16GE?
Yes, the HMC453QS16G and HMC453QS16GE share identical pinout, electrical characteristics, and mechanical outline. The only difference is lead finish: HMC453QS16G uses Sn/Pb solder (MSL1, 235 °C peak), while HMC453QS16GE uses 100% matte Sn (MSL1, 260 °C peak) for RoHS compliance. Both are functionally interchangeable in existing designs.
What thermal management is required for continuous operation of the HMC453QS16G?
The HMC453QS16G requires soldering all GND pins (1, 2, 4, 5, 7–10, 13–16) and the exposed ground paddle to a multilayer PCB ground plane with ≥8 thermal vias (0.3 mm diameter, spaced ≤1 mm apart). With this layout, junction temperature stays ≤85 °C at 3.8 W dissipation - enabling full-power operation in −40°C to +85°C ambient environments.
109994-HMC453QS16G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 2.1GHz ~ 2.17GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC453QS16GE
109994-HMC453QS16G FAQ
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6.How does Aetrix verify that 109994-HMC453QS16G is sourced from the original manufacturer or authorized distributors?
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7.What is the process for return or replacement of 109994-HMC453QS16G?
All 109994-HMC453QS16G units undergo pre-shipment inspection (PSI). If there is an issue with 109994-HMC453QS16G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 109994-HMC453QS16G part is unused and in its original packaging.
Return procedure for 109994-HMC453QS16G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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