Analog Devices Inc. 110170-HMC478MP86

Overview

110170-HMC478MP86 from Analog Devices (formerly Hittite Microwave) is a SiGe HBT monolithic microwave integrated circuit (MMIC) gain block amplifier operating from DC to 4 GHz, delivering 22 dB small-signal gain, +18 dBm P1dB output power, and +32 dBm OIP3 at 850 MHz with 62 mA supply current from a +5 V to +8 V single supply - used as a cascadable 50 Ω RF/IF gain stage or LO/PA driver in cellular base stations and test equipment.

For engineers reviewing the 110170-HMC478MP86 datasheet, 110170-HMC478MP86 pinout, 110170-HMC478MP86 application, or 110170-HMC478MP86 equivalent, key selection criteria include its DC–4 GHz bandwidth, 22 dB gain flatness across frequency bands, robust Class 1C ESD rating (1,000 V HBM), Micro-P SMT package compatibility, and bias simplicity requiring only one external resistor for stable 62 mA operation.

Technical Context

The 110170-HMC478MP86 employs a Darlington feedback pair architecture in SiGe HBT technology, enabling excellent gain stability over temperature (0.015–0.02 dB/°C) and reduced sensitivity to process variation. Its fully DC-coupled I/Os support broadband operation without internal blocking capacitors.

Designed for 50 Ω system integration, the device features cascadable input/output return loss ≥12 dB (DC–3 GHz) and reverse isolation ≥20 dB (DC–4 GHz), with noise figure of 2.5 dB (DC–3 GHz) and thermal resistance of 111.5 °C/W - optimized for compact RF front-end stages where linearity, gain consistency, and low external component count are critical.

Key Specifications

Pinout & Package

The 110170-HMC478MP86 is housed in a 4-lead Micro-P surface-mount package (dimensionally compatible with Micro-X), with leadframe material copper alloy, Sn/Pb solder finish, and MSL1 rating. All ground leads must be soldered to PCB RF ground per layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF gain block applications.

Compared with HMC478MP86E and QPL9057, the 110170-HMC478MP86 offers optimal trade-off of DC–4 GHz bandwidth, single-supply convenience, and 2.5 dB NF - making it preferred for cost-sensitive, thermally stable, and layout-constrained cellular and test equipment designs where RoHS is not required.

Availability

110170-HMC478MP86 is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and microwave test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified analog RF suppliers.

Supply support for 110170-HMC478MP86 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014, integrating its high-performance RF/microwave portfolio into ADI's broader signal chain solutions for communications, defense, and instrumentation.

The 110170-HMC478MP86 belongs to Hittite's legacy MMIC gain block product line, engineered specifically for broadband, low-component-count RF amplification in infrastructure and test systems demanding DC–4 GHz operation and thermal stability.

FAQ

What is the recommended bias resistor value for 110170-HMC478MP86 at +5 V supply?

The recommended bias resistor value for 110170-HMC478MP86 at +5 V supply is 18 Ω, calculated to deliver the specified 62 mA quiescent current (I_CQ). This value ensures stable operation across temperature and maintains the device's 22 dB gain and +32 dBm OIP3 performance. The resistor must be rated for at least 1/8 W to handle power dissipation safely.

Does 110170-HMC478MP86 require external DC blocking capacitors?

Yes, 110170-HMC478MP86 requires external DC blocking capacitors on both RFIN (Pin 1) and RFOUT (Pin 3), as both ports are DC-coupled. These capacitors prevent DC bias disruption in cascaded stages and ensure proper impedance matching. Typical values range from 100 pF to 0.01 μF depending on lowest operating frequency.

What is the thermal resistance and maximum junction temperature of 110170-HMC478MP86?

The 110170-HMC478MP86 has a thermal resistance of 111.5 °C/W (junction to lead) and a maximum junction temperature of 150 °C. At 85 °C case temperature, its continuous power dissipation is 0.583 W, derating by 9 mW/°C above that. Proper PCB grounding and thermal vias are essential to maintain reliability under full RF load.

Is 110170-HMC478MP86 pin-compatible with other Micro-P packaged amplifiers?

110170-HMC478MP86 uses the standard 4-lead Micro-P package, dimensionally compatible with the Micro-X footprint. However, pin function (RFIN, GND, RFOUT, GND) and internal biasing differ across families - direct substitution requires verification of I/O configuration, bias scheme, and RF performance at target frequencies.

Can 110170-HMC478MP86 operate below 100 MHz with stable gain?

Yes, 110170-HMC478MP86 operates from DC to 4 GHz with measured gain of 22 dB down to DC, confirmed by its "DC–1.0 GHz" specification bin. Gain variation remains within ±0.5 dB from DC to 1 GHz at +25°C, and its Darlington feedback architecture ensures stability even at sub-MHz frequencies with appropriate external biasing.