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Analog Devices Inc. 110227-HMC507LP5

Part No.:
110227-HMC507LP5
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
Aetrix110227-HMC507LP5.pdf
Description:
BOARD EVAL HMC507LP5E
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,989

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Product details

Overview

HMC507LP5 from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT monolithic voltage-controlled oscillator with dual RF outputs: fundamental (Fo = 6.65–7.65 GHz) and half-frequency (Fo/2 = 3.325–3.825 GHz), delivering +13.5 dBm typical RFOUT power at +5 V supply, -115 dBc/Hz phase noise @ 100 kHz offset, and housed in a 32-lead 5×5 mm QFN package. It serves as a low-noise local oscillator in microwave radio transceivers.

For engineers reviewing the HMC507LP5 datasheet, HMC507LP5 pinout, HMC507LP5 application, or HMC507LP5 equivalent, key selection criteria include its integrated resonator architecture, Fo/Fo/2 dual-band capability, ±8 MHz pulling tolerance, 15 MHz/V pushing coefficient, and MSL3 reflow compatibility - all critical for VSAT and point-to-point radio design.

Technical Context

The HMC507LP5 implements a fully monolithic GaAs InGaP HBT oscillator core with on-die varactor tuning and integrated resonators, eliminating external LC tanks or matching networks. Its dual-output topology routes Fo to Pin 19 (RFOUT) and Fo/2 to Pin 12 (RFOUT/2), both AC-coupled and requiring no external DC blocking.

Frequency tuning is achieved via a 2–13 V analog control voltage applied to Pin 29 (VTUNE), with sensitivity averaging ~15 MHz/V across the band and <10 µA leakage at 13 V. The device operates over -40°C to +85°C with stable phase noise performance maintained by monolithic thermal coupling.

Key Specifications

Parameter Value and Actual Design Meaning
Fo Range 6.65–7.65 GHz: Covers full Ku-band uplink segment; enables single-VCO LO generation for 13.3–15.3 GHz mixers.
Fo/2 Range 3.325–3.825 GHz: Provides clean sub-harmonic output for lower IF stages or dual-band transceiver architectures.
RFOUT Power +13.5 dBm typ.: Sufficient to drive passive mixers or low-gain amplifiers without intermediate buffering.
Phase Noise -115 dBc/Hz @ 100 kHz: Meets stringent spectral purity requirements for high-order QAM modulation in VSAT systems.
Tuning Voltage 2–13 V: Compatible with standard DACs and loop filters; supports wide frequency deviation for FSK/PSK modulation.
Supply Current 225 mA typ. @ +5 V: Enables predictable thermal management in compact RF modules with 1.35 W max dissipation.
Package 32-lead 5×5 mm QFN: Exposed paddle requires soldered RF ground connection; supports automated SMT assembly per MSL3.

Pinout & Package

Package: 32-lead leadless QFN, 5×5 mm body, exposed ground paddle, Sn/Pb finish, MSL3 rated (peak reflow 235°C). Requires full-solder connection of paddle and all GND pins to PCB RF ground plane.

Pin/Terminal Circuit Role Design Meaning
1–4, 6–10, 13–18, 20, 22–28, 30–32 No Connection Internally unconnected; may be tied to ground for mechanical stability without affecting RF performance.
5, 11, Paddle Ground Primary RF/DC return path; paddle must be soldered to solid ground plane with ≥6 thermal vias for thermal and impedance control.
12 RFOUT/2 AC-coupled half-frequency output (3.325–3.825 GHz); requires external 50 Ω termination and DC blocking.
19 RFOUT AC-coupled fundamental output (6.65–7.65 GHz); designed for direct interface to mixer LO ports or amplifier inputs.
21 Vcc +5 V DC supply input; bypassing with 100 pF (RF) + 2.2 µF (bulk) required per evaluation board layout.
29 VTUNE Analog tuning port (2–13 V); high-impedance input; bandwidth limited by source impedance; sensitive to noise coupling.

Key Features

Feature Design Value
Monolithic GaAs InGaP HBT core Eliminates external resonators and matching components, reducing BOM count and layout sensitivity in production RF modules.
Dual AC-coupled outputs (Fo & Fo/2) Enables single-device LO synthesis for both RF and IF paths, simplifying frequency planning in heterodyne transceivers.
-115 dBc/Hz phase noise @ 100 kHz Supports 64-QAM and higher-order modulation schemes in point-to-point radios without additional PLL cleanup.
±8 MHz pulling tolerance (2:1 VSWR) Ensures stable operation when driving mismatched loads such as passive mixers or filter chains without isolators.
Integrated thermal compensation Maintains frequency drift ≤0.9 MHz/°C and phase noise stability across -40°C to +85°C industrial temperature range.

Applications

VSAT Radio Transceivers Point-to-Point Microwave Links

Use Scenario: Local oscillator in Ku-band VSAT outdoor units generating uplink LO at 13.75 GHz via x2 active mixing.

IC Role / Device Role / Timing Role: Primary VCO providing Fo = 6.875 GHz to drive doubler stage; Fo/2 used for receiver IF synthesis.

Use Value: Eliminates need for separate VCOs or PLLs for transmit/receive paths, reducing size and power in ODU modules.

Use Scenario: Compact backhaul radio operating in 6–8 GHz licensed band with integrated transceiver architecture.

IC Role / Device Role / Timing Role: Dual-output VCO supplying Fo to transmitter mixer and Fo/2 to receiver quadrature demodulator.

Use Value: Enables coherent I/Q downconversion with inherent phase correlation between LO paths, improving EVM.

Test Equipment Signal Sources Military SATCOM Terminals

Use Scenario: Portable RF signal generator module requiring fast-tuning, low-phase-noise LO across 6.65–7.65 GHz.

IC Role / Device Role / Timing Role: Core VCO in synthesizer front-end; VTUNE driven by precision DAC for frequency agility.

Use Value: Delivers lab-grade phase noise without ovenized references, enabling battery-powered field test instruments.

Use Scenario: Secure tactical SATCOM terminal operating in contested environments with wide temperature excursions.

IC Role / Device Role / Timing Role: Radiation-tolerant VCO (Class 1A ESD) providing jam-resistant hopping LO in LRU-level assemblies.

Use Value: Monolithic construction ensures reliability under shock/vibration; -40°C to +85°C operation supports vehicle-mounted deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar VCO applications.

Alternative Part Technical Difference Application Difference Selection Advice
HMC508LP5 Same package and process; Fo = 7.0–8.0 GHz, Fo/2 = 3.5–4.0 GHz; +12.5 dBm RFOUT; -113 dBc/Hz @ 100 kHz. Higher-frequency coverage; slightly lower output power and phase noise; identical pinout and biasing. Select when system requires upper Ku-band LO generation (e.g., 14–16 GHz uplink) with minimal redesign.
ADF4355BCPZ Si-based PLL+VCO; Fo = 137.5 MHz–4.4 GHz; integrated fractional-N synthesizer; requires external loop filter. Programmable frequency step (Hz resolution); wider tuning range but higher phase noise (-112 dBc/Hz @ 100 kHz at 3.5 GHz). Choose for systems needing fine frequency resolution, multi-band agility, or digital control - not for fixed-frequency low-noise LOs.

Compared with HMC507LP5, HMC508LP5 offers extended upper band coverage with near-identical form and function, while ADF4355BCPZ trades monolithic simplicity and phase noise for programmability and integration - making it suitable for agile synthesizers but less optimal for static, low-jitter LO roles.

Availability

HMC507LP5 is available at Aetrix Electronics and suitable for VSAT radio development, point-to-point microwave links, and military SATCOM terminals requiring stable component supply, consistent RF performance, and long-term obsolescence management.

Supply support for HMC507LP5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014, integrating its high-frequency RF expertise into a broad portfolio of microwave, millimeter-wave, and RF solutions.

The HMC507LP5 belongs to Hittite's legacy MMIC VCO product line, engineered specifically for low-phase-noise, surface-mount LO generation in satellite communications and licensed microwave infrastructure.

FAQ

What is the operating temperature range for the HMC507LP5?

The HMC507LP5 operates over -40°C to +85°C ambient temperature. Its monolithic GaAs structure ensures stable frequency drift (≤0.9 MHz/°C) and consistent phase noise performance across this full industrial range, validated per datasheet electrical specifications at TA = +25°C and thermal characterization plots showing behavior at -40°C and +85°C.

Does the HMC507LP5 require external matching components?

No, the HMC507LP5 requires no external matching components. Its GaAs InGaP HBT MMIC design integrates resonators, negative resistance devices, and varactor diodes on-die. Both RFOUT and RFOUT/2 outputs are internally matched to 50 Ω and AC-coupled, needing only external DC blocking and 50 Ω termination per the evaluation board layout.

What is the recommended PCB grounding strategy for the HMC507LP5?

The HMC507LP5 requires robust RF grounding: the exposed metal paddle (Pin 5, 11, and paddle) must be soldered to a solid PCB ground plane using ≥6 thermal vias. All GND pins and the paddle form the primary RF return path; insufficient grounding degrades phase noise, output power, and pulling performance per Hittite Application Note land pattern guidance.

Can the HMC507LP5 be used as a standalone LO without a PLL?

Yes, the HMC507LP5 is designed for open-loop VCO operation. It delivers stable, low-phase-noise output with excellent temperature and supply push/pull immunity, making it suitable as a fixed or voltage-tuned LO in systems where frequency accuracy is managed externally (e.g., via calibration tables or coarse DAC control), without requiring closed-loop PLL stabilization.

What is the maximum allowable tuning voltage for the HMC507LP5?

The absolute maximum tuning voltage (VTUNE) for the HMC507LP5 is +15 V, though the functional range is specified as 2–13 V for full Fo coverage (6.65–7.65 GHz). Operating above 13 V yields diminishing frequency increase and risks exceeding recommended bias conditions; datasheet limits VTUNE leakage to 10 µA at 13 V.

110227-HMC507LP5 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Box
Product Status:
Active
Type:
Voltage Controlled Oscillator (VCO)
Frequency:
6.65GHz ~ 7.65GHz
Contents:
Board(s)
Utilized IC / Part:
HMC507LP5

110227-HMC507LP5 FAQ

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The price and inventory of 110227-HMC507LP5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 110227-HMC507LP5 is usually 5 days.

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6.How does Aetrix verify that 110227-HMC507LP5 is sourced from the original manufacturer or authorized distributors?

All 110227-HMC507LP5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 110227-HMC507LP5 meets industry standards.

7.What is the process for return or replacement of 110227-HMC507LP5?

All 110227-HMC507LP5 units undergo pre-shipment inspection (PSI). If there is an issue with 110227-HMC507LP5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 110227-HMC507LP5 part is unused and in its original packaging.

Return procedure for 110227-HMC507LP5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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