Analog Devices Inc. 110380-HMC452QS16G

Overview

HMC452QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1 W RF power amplifier optimized for 0.4–2.2 GHz cellular, WLL, and ISM applications. It delivers 22.5 dB gain at 400 MHz, +48 dBm output IP3 at 2.1 GHz, 53% PAE at +31 dBm Pout, and operates from a single +5 V supply with integrated VPD power control.

For engineers reviewing the HMC452QS16G datasheet, HMC452QS16G pinout, HMC452QS16G application, or HMC452QS16G equivalent, key selection criteria include broadband linearity (OIP3 ≥ +43 dBm), temperature-stable gain variation (≤0.02 dB/°C), QSOP16G package compatibility, and CDMA2000/W-CDMA channel power performance (e.g., +24 dBm @ –45 dBc ACP).

Technical Context

The HMC452QS16G employs a monolithic GaAs InGaP HBT process to achieve high dynamic range across four major frequency bands: 400–410 MHz, 450–496 MHz, 810–960 MHz, 1710–1990 MHz, and 2010–2170 MHz. Its architecture integrates bias control via VPD to enable full power-down or precise RF output current regulation without external DC blocking.

It features DC-coupled RFIN (Pin 6) and RFOUT/DC-bias pins (Pins 11–12), requiring off-chip matching networks per band. Thermal design relies on soldering all ground leads (Pins 1,2,4,5,7–10,13–16) and the exposed paddle to PCB RF ground, with junction-to-ground-paddle thermal resistance of 24.1 °C/W.

Key Specifications

Pinout & Package

Package: QSOP16G - 16-lead plastic surface-mount package with exposed ground paddle; footprint area 29.4 mm²; MSL1 rating; Sn/Pb lead finish; max reflow 235 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPA2211 and SKY65167-360LF, the HMC452QS16G uniquely balances ultra-wideband coverage (0.4–2.2 GHz), +5 V simplicity, and VPD-based power management-making it optimal for multi-band fixed wireless and legacy cellular infrastructure where supply voltage and control flexibility are constrained.

Availability

HMC452QS16G is available at Aetrix Electronics and suitable for GSM/CDMA infrastructure, WLL CPE, and ISM band point-to-point links requiring stable component supply, long-lifecycle support, and consistent RF performance across temperature.

Supply support for HMC452QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014, integrating its high-frequency RF expertise into a broad portfolio of microwave, millimeter-wave, and RF solutions.

The HMC452QS16G belongs to Hittite's linear & power amplifier product line, designed specifically for high-efficiency, high-linearity amplification in cellular infrastructure, wireless local loop, and ISM band systems.

FAQ

What is the absolute maximum RF input power rating for the HMC452QS16G?

The HMC452QS16G has an absolute maximum RF input power rating of +31 dBm when Vs = Vpd = +5 Vdc, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the InGaP HBT transistor cells. For reliable operation, input power should remain ≤ +20 dBm in typical small-signal gain applications, with appropriate external attenuation or limiting if driven near compression.

Does the HMC452QS16G require external DC blocking capacitors on RFIN and RFOUT?

Yes - the HMC452QS16G has DC-coupled RFIN (Pin 6) and RFOUT (Pins 11–12), meaning external DC blocking capacitors are mandatory unless the preceding or following stages are also DC-coupled and bias-compatible. The recommended application circuit uses 12 pF (C1/C2) at RFIN and 2.2 µF tantalum (C8/C9) at RFOUT to ensure proper bias isolation and RF coupling.

How does VPD control affect quiescent current and RF output power in the HMC452QS16G?

VPD (Pin 3) directly controls Icq: at +5 V, Icq = 485 mA (full power); reducing VPD lowers Icq linearly, enabling analog power scaling or complete shutdown at 0 V. At +3.3 V VPD, Icq drops to ~320 mA, reducing P1dB by ~2 dB and OIP3 by ~3 dB - a trade-off validated in the Gain/Power/IP3 vs. Supply Current plots at 900/1900 MHz.

Is the HMC452QS16G RoHS-compliant?

The HMC452QS16G uses Sn/Pb lead finish and is not RoHS-compliant; the RoHS-compliant variant is the HMC452QS16GE (matte Sn, MSL1, 260 °C reflow). Both share identical electrical specifications and pinout, but material composition and assembly process differ - HMC452QS16G is intended for legacy or non-RoHS production environments.

What thermal management practices are required for reliable HMC452QS16G operation at full power?

At full +31 dBm output, the HMC452QS16G dissipates ~2.7 W. Reliable operation requires soldering all 12 ground pins plus the exposed paddle to a multilayer PCB ground plane with ≥8 thermal vias (0.3 mm diameter, spaced ≤2 mm apart), mounting on an aluminum heatsink, and maintaining ambient ≤+85 °C. Junction temperature must stay below 150 °C, with derating of 41.5 mW/°C above 85 °C ambient.